BAV170VL

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV170 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2003 Mar 25 NXP Semiconductors Product data sheet Low-leakage double diode BAV170 FEATURES DESCRIPTION • Plastic SMD package Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V PINNING PIN DESCRIPTION 1 anode 2 anode 3 common cathode • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATION 2 handbook, 4 columns 1 • Low-leakage current applications in surface mounted circuits. 2 1 MARKING 3 TYPE NUMBER BAV170 MARKING CODE(1) 3 Top view MAM108 JX* Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. 2003 Mar 25 Fig.1 Simplified outline (SOT23) and symbol. 2 NXP Semiconductors Product data sheet Low-leakage double diode BAV170 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current − 85 V − 75 V single diode loaded; note 1; see Fig.2 − 215 mA double diode loaded; note 1; see Fig.2 − 125 mA − 500 mA tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A − 250 mW square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C TYP. MAX. Note 1. Device mounted on a FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 1 mA − 900 mV IF = 10 mA − 1 000 mV IF = 50 mA − 1100 mV IF = 150 mA − 1 250 mV VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 0.8 3 µs 2003 Mar 25 3 NXP Semiconductors Product data sheet Low-leakage double diode BAV170 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient VALUE UNIT 360 K/W 500 K/W note 1 Note 1. Device mounted on a FR4 printed-circuit board. GRAPHICAL DATA MBG521 300 MLB752 - 1 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 (1) (2) (3) (1) 100 100 (2) 0 0 100 Tamb (oC) 0 0 200 Device mounted on a FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 0.8 1.2 V F (V) 1.6 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Maximum permissible continuous forward current as a function of ambient temperature. 2003 Mar 25 0.4 Fig.3 4 Forward current as a function of forward voltage; per diode. NXP Semiconductors Product data sheet Low-leakage double diode BAV170 MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 102 10 103 104 tp (µs) Based on square wave currents; Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode. MLB754 2 10halfpage handbook, IR (nA) 10 MBG526 2 handbook, halfpage Cd (pF) (1) 1 1 10 1 (2) 10 2 10 3 0 0 50 0 100 150 o T j ( C) 5 200 10 15 VR (V) 20 VR = 75 V. (1) Maximum values. (2) Typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature; per diode. 2003 Mar 25 5 Diode capacitance as a function of reverse voltage; per diode; typical values. NXP Semiconductors Product data sheet Low-leakage double diode BAV170 handbook, full pagewidth tr tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal Fig.7 Reverse recovery time test circuit and waveforms. 2003 Mar 25 t rr 6 output signal NXP Semiconductors Product data sheet Low-leakage double diode BAV170 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Mar 25 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 7 NXP Semiconductors Product data sheet Low-leakage double diode BAV170 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Mar 25 Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp Date of release: 2003 Mar 25 Document order number: 9397 750 10965