BAV20W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAV19W~BAV21W SOD-123 SWITCHING DIODE FEATURES z Low Reverse Current z Surface Mount Package Ideally Suited for Automatic Insertion z Fast Switching Speed z For General Purpose Switching Applications MARKING: BAV19W: A8 BAV20W: T2 BAV21W: T3 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol VRM Non-Repetitive Peak Reverse Voltage VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR(RMS) Value Parameter BAV19W BAV20W BAV21W 120 200 250 100 150 200 71 106 141 RMS Reverse Voltage Unit V V V Average Rectified Output Current 200 mA IFSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 1.7 A PD Power Dissipation 500 mW Thermal Resistance from Junction to Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ IO RΘJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse current Symbol IR Forward voltage VF Total capacitance Ctot Reverse recovery time trr Test conditions Min Typ Max VR=100V BAV19W 0.1 VR=150V BAV20W 0.1 VR=200V BAV21W 0.1 IF=100mA 1 IF=200mA 1.25 Unit uA V VR=0V,f=1MHz 5 pF IF= IR =30mA, Irr=0.1*IR , RL=100Ω 50 ns C ,Dec,2013 Typical Characteristics Forward BAV20W Characteristics Reverse Pulsed Pulsed 1000 Ta=100℃ (nA) 100 REVERSE CURRENT IR 30 T= a 2 5℃ T= a 1 00 ℃ FORWARD CURRENT IF (mA) Characteristics 10000 400 10 3 1 0.2 100 10 Ta=25℃ 1 0.1 0.4 0.6 0.8 FORWARD VOLTAGE 1.0 VF 1.2 1 1.4 50 (V) 100 REVERSE VOLTAGE 150 VR 200 (V) Power Derating Curve Capacitance Characteristics 600 1.4 Ta=25℃ f=1MHz (mW) PD 400 1.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 500 1.2 0.8 0.6 300 200 100 0.4 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) C ,Dec,2013