BC337

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. COLLECTOR 2.BASE 3. EMITTER  Equivalent Circuit BC337 BC338 BC337,BC338 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH Z Z LIQRQHWKHQRUPDOGHYLFH z z Z=Rank of hFE ;;; &RGH 1 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BC337 TO-92 Bulk 1000pcs/Bag BC3377$ TO-92 Tape 2000pcs/Box BC338 TO-92 Bulk 1000pcs/Bag BC3387$ TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Value Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC BC337 50 BC338 30 BC337 45 BC338 25 Unit V V 5 V Collector Current -Continuous 800 mA PD Total Device Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature www.cj-elec.com -55-150 1 ℃ F,Aug,2017  Ta =25 Я unless otherwise specified Parameter Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 Emitter-base breakdown voltage BC337 Collector cut-off current BC338 BC337 Collector cut-off current BC338 Emitter cut-off current BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol VCBO VCEO VEBO ICBO ICEO IEBO Test conditions IC= 100uA, IE=0 IC= 10mA , IB=0 IE= 10uA, IC=0 VCB= 45V, IE=0 VCB= 25V, IE=0 VCE= 40V, IB=0 VCE= 20V, IB=0 VEB= 4 V, IC=0 hFE(1) VCE=1V, IC= 100mA VCE=1V, IC= 300mA Base-emitter voltage hFE(2) VCE(sat) VBE(sat) VBE Transition frequency fT Collector Output Capacitance Cob IC=500mA, IB= 50mA IC= 500mA, IB=50mA VCE=1V, IC= 300mA VCE= 5V, IC= 10mA f = 100MHz VCB=10V,IE=0 f=1MHZ www.cj-elec.com MIN TYP MAX UNIT 50 30 V V 45 25 5 V V V 0.1 0.1 0.2 0.2 0.1 630 250 400 630 100 100 160 250 60 0.7 1.2 1.2 210 uA uA uA V V V MHz 15 pF  FAug Typical Characteristics hFE Static Characteristic 250 1000 800uA 720uA COMMON EMITTER Ta=25℃ 200 IC Ta=100℃ 560uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 640uA —— 480uA 150 400uA 320uA 100 240uA 160uA 50 Ta=25℃ 100 COMMON EMITTER VCE=3V IB=80uA 0 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat —— 10 1000 Ta=100℃ Ta=25℃ 10 β=10 1 10 100 COLLECTOR CURRENT fT IC —— (mA) IC Ta=100℃ β=10 100 1 800 (mA) 10 100 Cob/ Cib IC (mA) —— VCB/ VEB f=1MHz IE=0/ IC=0 CAPACITANCE C (pF) Cib 100 10 800 100 COLLECTOR CURRENT IC —— IC Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 100 800 100 COLLECTOR CURRENT VBEsat 1 TRANSITION FREQUENCY fT (MHz) 1 (V) IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCE 6 Ta=25℃ Cob COMMON EMITTER Ta=25℃ VCE=5V 10 1 1 0.1 10 COLLECTOR CURRENT PC 650 —— IC (mA) 1 REVERSE VOLTAGE 10 V 20 (V) Ta 600 COLLECTOR POWER DISSIPATION PC (mW) 550 500 450 400 350 300 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 3 F,Aug,2017 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 4 F,Aug,2017 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP5 F,Aug,2017