CJK8804

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK8804 N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS RDS(on)TYP ID    9.8  10.5    SOT-23-3L 7 11.1   1. GATE 13.3  2. SOURCE 3. DRAIN D FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z ESD Protected Gate APPLICATION z Load/Power Switching z Interfacing Switching Equivalent Circuit MARKING .8804 Solid dot = Green molding compound device, if none,the normal device. Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A Pulsed Drain Current IDM * 25 A Power Dissipation PD 500 mW Thermal Resistance from Junction to Ambient RJA 249 /W Junction Temperature Tj 150  Storage Temperature Tstg -55~+150  TL 260  Continuous Drain Current * Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Repetitive rating : Pulse width limited by junction temperature. www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID = 250μA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 μA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±5 μA VGS(th) VDS =VGS, ID =250μA 0.75 1 V VGS =10V, ID = 3A 9.8 13 m VGS =4.5V, ID =3A 10.5 14 m VGS =3.8V, ID = 3A 11.1 15.5 m VGS =2.5V, ID =3A 13.3 19 m Gate threshold voltage (note 1) Drain-source on-resistance (note 1) RDS(on) Forward tranconductance (note 1) gFS VDS =5V, ID =3A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 20 0.5 V S 17 1 V DYNAMIC PARAMETERS (note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 1800 pF 230 pF Crss 200 pF Total gate charge Qg 17.9 nC Gate-source charge Qgs 1.5 nC Gate-drain charge Qgd 4.7 nC td(on) 2.5 ns VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =3A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=10V,VDS=10V, 7.2 ns td(off) RL=1.2,RGEN=3 49 ns 10.8 ns tf Notes : 1. Pulse Test : Pulse width300μs, duty cycle0.5%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics 25 Transfer Characteristics 10 Pulsed VDS=16V VGS=10Vǃ4.5Vǃ3.8V Pulsed 20 ID 15 DRAIN CURRENT DRAIN CURRENT ID (A) (A) 8 VGS=1.8V 10 5 6 4 Ta=100ć Ta=25ć 2 VGS=1.2V 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE 0.2 0.4 (V) 0.6 1.0 0.8 1.2 GATE TO SOURCE VOLTAGE ID RDS(ON) —— 30 VDS 0 0.0 10 1.4 VGS RDS(ON)—— VGS 100 Ta=25ć Ta=25ć Pulsed ID=3A RDS(ON) (m) 25 20 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) Pulsed VGS=2.5V 15 VGS=4.5V 10 VGS=10V 1 2 3 4 5 6 DRAIN CURRENT IS —— ID 7 Ta=100ć Ta=25ć 0 2 4 6 8 GATE TO SOURCE VOLTAGE VSD 10 VGS 12 (V) Threshold Voltage 750 700 Pulsed VTH (mV) 1 Ta=100ć THRESHOLD VOLTAGE IS (A) 40 (A) Ta=25ć SOURCE CURRENT 60 0 8 10 0.1 80 20 5 0 1.6 (V) Ta=25ć 0.01 1E-3 650 600 ID=250uA 550 500 450 400 1E-4 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 VSD (V) 1.2 350 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (ć ) 3  R ev. - 1.0      Symbol A A1 A2 b c D E1 E e e1 L Κ Dimensions In Millimeters Max. Min. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8°     NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0      www.jscj-elec.com 5 Rev. - 1.0