HEF4069UBT-Q100J

HEF4069UB-Q100 Hex inverter Rev. 2 — 9 September 2014 Product data sheet 1. General description The HEF4069UB-Q100 is a general-purpose hex inverter. Each inverter has a single stage. It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits  Automotive product qualification in accordance with AEC-Q100 (Grade 1)  Specified from 40 C to +85 C and from 40 C to +125 C  Fully static operation  5 V, 10 V, and 15 V parametric ratings  Standardized symmetrical output characteristics  ESD protection:  MIL-STD-883, method 3015 exceeds 2000 V  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  Complies with JEDEC standard JESD 13-B 3. Applications  Oscillator 4. Ordering information Table 1. Ordering information All types operate from 40 C to +125 C. Type number HEF4069UBT-Q100 Package Name Description Version SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 HEF4069UBTT-Q100 TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 HEF4069UB-Q100 Nexperia Hex inverter 5. Functional diagram 1A 2A 3A 4A 5A 6A 1 2 3 4 5 6 9 8 11 10 13 12 1Y 2Y 3Y 4Y VDD 5Y A 6Y VSS 001aag154 001aag152 Fig 1. Y Functional diagram Fig 2. Schematic diagram (one inverter) 6. Pinning information 6.1 Pinning +()8%4 $   9'' <   $ $   < <   $ $   < <   $ 966   < DDD Fig 3. Pin configuration 6.2 Pin description Table 2. Pin description Symbol Pin Description 1A to 6A 1, 3, 5, 9, 11, 13 input 1Y to 6Y 2, 4, 6, 8, 10, 12 output VSS 7 ground (0 V) VDD 14 supply voltage HEF4069UB_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 September 2014 © Nexperia B.V. 2017. All rights reserved 2 of 16 HEF4069UB-Q100 Nexperia Hex inverter 7. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDD supply voltage IIK input clamping current VI input voltage IOK output clamping current II/O Conditions Min Max 0.5 VI < 0.5 V or VI > VDD + 0.5 V 0.5 +18 V 10 mA VDD + 0.5 V - 10 mA input/output current - 10 mA IDD supply current - 50 mA Tstg storage temperature 65 +150 C Tamb ambient temperature 40 +125 C Ptot total power dissipation P power dissipation VO < 0.5 V or VO > VDD + 0.5 V Unit Tamb = 40 C to +125 C SO14 [1] - 500 mW TSSOP14 [2] - 500 mW - 100 mW per output [1] For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K. [2] For TSSOP14 packages: above Tamb = 60 C, Ptot derates linearly with 5.5 mW/K. 8. Recommended operating conditions Table 4. Recommended operating conditions Symbol Parameter Min Typ Max Unit VDD supply voltage 3 - 15 V VI input voltage 0 - VDD V Tamb ambient temperature 40 - +125 C HEF4069UB_Q100 Product data sheet Conditions in free air All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 September 2014 © Nexperia B.V. 2017. All rights reserved 3 of 16 HEF4069UB-Q100 Nexperia Hex inverter 9. Static characteristics Table 5. Static characteristics VSS = 0 V; VI = VSS or VDD; unless otherwise specified. Symbol Parameter VIH VIL VOH VOL IOH IOL Conditions VDD Tamb = 40 C Tamb = +25 C Tamb = +85 C Tamb = +125 C Unit Min Max Min Max Min Max Min Max 5V 4 - 4 - 4 - 4 - V 10 V 8 - 8 - 8 - 8 - V 15 V 12.5 - 12.5 - 12.5 - 12.5 - V 5V - 1 - 1 - 1 - 1 V 10 V - 2 - 2 - 2 - 2 V 15 V - 2.5 - 2.5 - 2.5 - 2.5 V HIGH-level IO < 1 A output voltage 5V 4.95 - 4.95 - 4.95 - 4.95 - V 10 V 9.95 - 9.95 - 9.95 - 9.95 - V 15 V 14.95 - 14.95 - 14.95 - 14.95 - V LOW-level IO < 1 A output voltage 5V - 0.05 - 0.05 - 0.05 - 0.05 V 10 V - 0.05 - 0.05 - 0.05 - 0.05 V 15 V - 0.05 - 0.05 - 0.05 - 0.05 V 5V - 1.7 - 1.4 - 1.1 - 1.1 mA 5V - 0.64 - 0.5 - 0.36 - 0.36 mA VO = 9.5 V 10 V - 1.6 - 1.3 - 0.9 - 0.9 mA VO = 13.5 V 15 V - 4.2 - 3.4 - 2.4 - 2.4 mA 5V 0.64 - 0.5 - 0.36 - 0.36 - mA 10 V 1.6 - 1.3 - 0.9 - 0.9 - mA 15 V 4.2 - 3.4 - 2.4 - 2.4 - mA A HIGH-level input voltage LOW-level input voltage IO < 1 A IO < 1 A HIGH-level VO = 2.5 V output current V = 4.6 V O LOW-level VO = 0.4 V output current V = 0.5 V O VO = 1.5 V II input leakage current 15 V - 0.1 - 0.1 - 1.0 - 1.0 IDD supply current all valid input 5 V combinations; 10 V IO = 0 A 15 V - 0.25 - 0.25 - 7.5 - 7.5 A - 0.5 - 0.5 - 15.0 - 15.0 A - 1.0 - 1.0 - 30.0 - 30.0 A - - - 7.5 - - - - CI input capacitance HEF4069UB_Q100 Product data sheet digital inputs All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 September 2014 © pF Nexperia B.V. 2017. All rights reserved 4 of 16 HEF4069UB-Q100 Nexperia Hex inverter 10. Dynamic characteristics Table 6. Dynamic characteristics Tamb = 25 C; for waveforms see Figure 4; for test circuit see Figure 5. Symbol Parameter tPHL tPLH tTHL tTLH [1] HIGH to LOW propagation delay Conditions VDD Extrapolation formula[1] Min Typ Max nA to nY 5V 18 ns + (0.55 ns/pF)CL - 45 90 ns 10 V 9 ns + (0.23 ns/pF)CL - 20 40 ns 15 V 7 ns + (0.16 ns/pF)CL - 15 25 ns 5V 13 ns + (0.55 ns/pF)CL - 40 80 ns 10 V 9 ns + (0.23 ns/pF)CL - 20 40 ns LOW to HIGH propagation delay nA to nY HIGH to LOW output transition time output nY LOW to HIGH output transition time output nY Unit 15 V 7 ns + (0.16 ns/pF)CL - 15 30 ns 5V 10 ns + (1.00 ns/pF)CL - 60 120 ns 10 V 9 ns + (0.42 ns/pF)CL - 30 60 ns 15 V 6 ns + (0.28 ns/pF)CL - 20 40 ns 5V 10 ns + (1.00 ns/pF)CL - 60 120 ns 10 V 9 ns + (0.42 ns/pF)CL - 30 60 ns 15 V 6 ns + (0.28 ns/pF)CL - 20 40 ns The typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (CL in pF). Table 7. Dynamic power dissipation VSS = 0 V; tr = tf  20 ns; Tamb = 25 C. Symbol Parameter PD dynamic power dissipation VDD Typical formula Where 5 V PD = 600  fi + (fo  CL)  VDD (W) 2 10 V PD = 4000  fi + (fo  CL)  VDD2 (W) fi = input frequency in MHz; fo = output frequency in MHz; 15 V PD = 22000  fi + (fo  CL)  VDD (W) CL = output load capacitance in pF; (fo  CL) = sum of the outputs; 2 VDD = supply voltage in V. HEF4069UB_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 September 2014 © Nexperia B.V. 2017. All rights reserved 5 of 16 HEF4069UB-Q100 Nexperia Hex inverter 11. Waveforms tr VI 90 % VM input 0V tf 10 % tPHL VOH tPLH 90 % VM output 10 % VOL tTLH 001aag185 tTHL Measurement points: VM = 0.5VDD. Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. Fig 4. Propagation delay and transition times 9'' * 9, 92 '87 &/ 57 DDJ Definitions for test circuit: CL = load capacitance including jig and probe capacitance; RT = termination resistance should be equal to the output impedance Zo of the pulse generator; For test data, refer to Table 8. Fig 5. Test circuit for measuring switching times Table 8. Test data Supply voltage Input VDD VI tr, tf CL 5 V to 15 V VSS or VDD  20 ns 50 pF HEF4069UB_Q100 Product data sheet Load All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 September 2014 © Nexperia B.V. 2017. All rights reserved 6 of 16 HEF4069UB-Q100 Nexperia Hex inverter 11.1 Transfer characteristics 001aag159 5.0 500 VO (V) 250 (2) (1) 0 ID (mA) 5 5 (2) (2) 0 5.0 0 2.5 10 VO (V) ID (μA) 2.5 001aag160 10 (1) (2) 0 0 0 5 10 VI (V) VI (V) a. VDD = 5 V; IO = 0 A b. VDD = 10 V; IO = 0 A 001aag161 20 20 VO (V) ID (mA) 10 10 (2) (1) (2) 0 0 0 10 20 VI (V) c. VDD = 15 V; IO = 0 A (1) VO = output voltage. (2) ID = drain current. Fig 6. Typical transfer characteristics HEF4069UB_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 September 2014 © Nexperia B.V. 2017. All rights reserved 7 of 16 HEF4069UB-Q100 Nexperia Hex inverter 12. Application information Some examples of applications for the HEF4069UB-Q100. Figure 7 shows an astable relaxation oscillator using two HEF4069UB-Q100 inverters and 2 BAW62 diodes. The oscillation frequency is mainly determined by R1  C1, provided R1