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HEF4070BT-Q100J

HEF4070BT-Q100J

  • 厂商:

    RUBYCON(红宝石)

  • 封装:

    SO-14

  • 描述:

    逻辑电路的归属系列:-;逻辑类型:-;电路/元件数:-;输入数/每元件位数:-;电源电压:-;静态电流(最大值):-;

  • 数据手册
  • 价格&库存
HEF4070BT-Q100J 数据手册
HEF4070B-Q100 Quad 2-input EXCLUSIVE-OR gate Rev. 2 — 16 December 2015 Product data sheet 1. General description The HEF4070B-Q100 is a quad 2-input EXCLUSIVE-OR gate. The outputs are fully buffered for the highest noise immunity and pattern insensitivity to output impedance. It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 3) and is suitable for use in automotive applications. 2. Features and benefits  Automotive product qualification in accordance with AEC-Q100 (Grade 3)  Specified from 40 C to +85 C  Fully static operation  5 V, 10 V, and 15 V parametric ratings  Standardized symmetrical output characteristics  ESD protection:  MIL-STD-883, method 3015 exceeds 2000 V  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  Complies with JEDEC standard JESD 13-B 3. Applications  Logical comparators  Parity checkers and generators 4. Ordering information Table 1. Ordering information Type number HEF4070BT-Q100 Package Temperature range Name Description 40 C to +85 C SO14 Version plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 HEF4070B-Q100 Nexperia Quad 2-input EXCLUSIVE-OR gate 5. Functional diagram  $  % <   $  % <   $  % <   $  % <  $ < % DDD Fig 1. Functional diagram Fig 2. PQD Logic diagram (one gate) 6. Pinning information 6.1 Pinning +()%4 $   9'' %   % <   $ <   < $   < %   % 966   $ DDD Fig 3. Pin configuration 6.2 Pin description Table 2. Pin description Symbol Pin Description 1A, 2A, 3A, 4A 1, 5, 8, 12 data input 1B, 2B, 3B, 4B 2, 6, 9, 13 data input 1Y, 2Y, 3Y, 4Y 3, 4, 10, 11 data output VSS 7 ground (0 V) VDD 14 supply voltage HEF4070B_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2015 © Nexperia B.V. 2017. All rights reserved 2 of 11 HEF4070B-Q100 Nexperia Quad 2-input EXCLUSIVE-OR gate 7. Functional description Table 3. Functional table[1] Input Output nA nB nY L L L L H H H L H H H L [1] H = HIGH voltage level; L = LOW voltage level 8. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground). Symbol Parameter VDD supply voltage IIK input clamping current VI input voltage IOK output clamping current Conditions VI < 0.5 V or VI > VDD + 0.5 V Min Max 0.5 +18 V - 10 mA 0.5 VO < 0.5 V or VO > VDD + 0.5 V Unit VDD + 0.5 V - 10 mA II/O input/output current - 10 mA IDD supply current - 50 mA Tstg storage temperature 65 +150 C Tamb ambient temperature 40 +85 C Ptot total power dissipation - 500 mW - 100 mW Tamb = 40 C to +85 C SO14 P [1] power dissipation per output [1] For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K. 9. Recommended operating conditions Table 5. Recommended operating conditions Symbol Parameter VDD supply voltage Conditions Min Max 3 15 Unit V VI input voltage 0 VDD V Tamb ambient temperature in free air 40 +85 C t/V input transition rise and fall rate VDD = 5 V - 3.75 s/V VDD = 10 V - 0.5 s/V VDD = 15 V - 0.08 s/V HEF4070B_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2015 © Nexperia B.V. 2017. All rights reserved 3 of 11 HEF4070B-Q100 Nexperia Quad 2-input EXCLUSIVE-OR gate 10. Static characteristics Table 6. Static characteristics VSS = 0 V; VI = VSS or VDD; unless otherwise specified Symbol Parameter VIH VIL VOH VOL IOH IOL HIGH-level input voltage LOW-level input voltage IO < 1 A IO < 1 A LOW-level output voltage IO < 1 A HIGH-level output current LOW-level output current input leakage current IDD supply current input capacitance HEF4070B_Q100 Product data sheet VDD IO < 1 A HIGH-level output voltage II CI Conditions Tamb = 40 C Tamb = +25 C Tamb = +85 C Unit Min Max Min Max Min Max 5V 3.5 - 3.5 - 3.5 - V 10 V 7.0 - 7.0 - 7.0 - V 15 V 11.0 - 11.0 - 11.0 - V 5V - 1.5 - 1.5 - 1.5 V 10 V - 3.0 - 3.0 - 3.0 V 15 V - 4.0 - 4.0 - 4.0 V 5V 4.95 - 4.95 - 4.95 - V 10 V 9.95 - 9.95 - 9.95 - V 15 V 14.95 - 14.95 - 14.95 - V 5V - 0.05 - 0.05 - 0.05 V 10 V - 0.05 - 0.05 - 0.05 V 15 V - 0.05 - 0.05 - 0.05 V mA VO = 2.5 V 5V - 1.7 - 1.4 - 1.1 VO = 4.6 V 5V - 0.52 - 0.44 - 0.36 mA VO = 9.5 V 10 V - 1.3 - 1.1 - 0.9 mA VO = 13.5 V 15 V - 3.6 - 3.0 - 2.4 mA VO = 0.4 V 5V 0.52 - 0.44 - 0.36 - mA VO = 0.5 V 10 V 1.3 - 1.1 - 0.9 - mA VO = 1.5 V 15 V 3.6 - 3.0 - 2.4 - mA 15 V - 0.3 - 0.3 - 1.0 A 5V - 1.0 - 1.0 - 7.5 A 10 V - 2.0 - 2.0 - 15.0 A 15 V - 4.0 - 4.0 - 30.0 A - - - 7.5 - - pF all valid input combinations; IO = 0 A All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2015 © Nexperia B.V. 2017. All rights reserved 4 of 11 HEF4070B-Q100 Nexperia Quad 2-input EXCLUSIVE-OR gate 11. Dynamic characteristics Table 7. Dynamic characteristics Tamb = 25 C; waveforms see Figure 4; for test circuit, see Figure 5; unless otherwise specified.[1] Symbol Parameter HIGH to LOW propagation delay tPHL LOW to HIGH propagation delay tPLH Conditions VDD Extrapolation formula Min Typ Max Unit nA or nB to nY 5V 58 ns + (0.55 ns/pF)CL - 85 175 ns 10 V 24 ns + (0.23 ns/pF)CL - 35 75 ns 15 V 21 ns + (0.16 ns/pF)CL - 30 55 ns 5V 43 ns + (0.55 ns/pF)CL - 75 150 ns 10 V 19 ns + (0.23 ns/pF)CL - 30 65 ns nA or nB to nY [2] transition time tt 15 V 17 ns + (0.16 ns/pF)CL - 25 50 ns 5V 10 ns + (1.00 ns/pF)CL - 60 120 ns 10 V 9 ns + (0.42 ns/pF)CL - 30 60 ns 15 V 6 ns + (0.28 ns/pF)CL - 20 40 ns [1] The typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (CL in pF). [2] tt is the same as tTHL and tTLH. Table 8. Dynamic power dissipation VSS = 0 V; tr = tf  20 ns; Tamb = 25 C. Symbol Parameter PD dynamic power dissipation VDD Typical formula where: 5V PD = 1100  fi + (fo  CL)  VDD (W) 2 fi = input frequency in MHz; 10 V PD = 4900  fi + (fo  CL)  VDD (W) fo = output frequency in MHz; 15 V PD = 14400  fi + (fo  CL)  VDD2 (W) CL = output load capacitance in pF; 2 (fo  CL) = sum of the outputs; VDD = supply voltage in V. HEF4070B_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2015 © Nexperia B.V. 2017. All rights reserved 5 of 11 HEF4070B-Q100 Nexperia Quad 2-input EXCLUSIVE-OR gate 12. Waveforms WU 9, WI  90 Q$Q%LQSXW 9  W3+/ 92+ W3/+  90 Q
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