MPS2222A-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 MPS2222A TRANSISTOR (NPN ) 1.EMITTER FEATURE Complementary NPN Type available (MPS2907A) 2.BASE 3. COLLECTOR 1  M PS 2222A Equivalent Circuit !6'&&  !"#$%$&%$'&*   $$*-$#%'&  &('  ,& &  "  ! "-.* "-.* "-./     1000pcs/Bag    Tape 2000pcs/Box     "    !  #$%&  Collector-Base Voltage 75 V #$'&  Collector-Emitter Voltage 40 V # #'%&  Emitter-Base Voltage 6 V $  Collector Current -Continuous 0.6 A "(  Collector Power Dissipation 625 mW  Thermal Resistance rom Junction o Ambient  200  /W  ș +  TJ, *  www.jscj-elec.com Operation Junction and Storage Temperature Range 1 -55   Rev. - 2.0 '2'$ $2$3$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 10 nA Collector cut-off current ICEX VCE= 60V,VEB(Off)=3V 10 nA Emitter cut-off current IEBO VEB= 3 V, IC=0 100 nA hFE(1) VCE=10V,IC= 150mA 100 hFE(2) VCE=10V,IC= 0.1mA 40 VCE=10V, IC= 500mA 42 DC current gain * hFE(3) IB=0 300 VCE(sat)(1) * IC= 500mA, IB=50mA 0.6 V VCE(sat)(2) * IC= 150mA, IB=15mA 0.3 V IC= 500mA, IB= 50mA 1.2 V td VCC=30V, VEB(Off)=-0.5V, 10 nS Rise time tr IC=150mA,IB1=15mA 25 nS Storage time tS 225 nS Fall time tf 60 nS Transition frequency fT Collector-emitter saturation voltage Base-emitter saturation voltage Delay time * conditions VBE(sat) * VCC=30V,Ic=150mA,IB1=IB2=15mA VCE=20V, IC=20mA, f=100MHz 300 MHz pulse test CLASSIFICATION OF hFE(1) Rank Range www.jscj-elec.com L H 100-200 200-300 2 Rev. - 2.0 Typical Characteristics 1000 900uA Ta=100ć 800uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=10V COMMON EMITTER Ta=25ć 1mA 160 IC —— hFE Static Characteristic 200 700uA 120 600uA 500uA 80 400uA 300uA Ta=25ć 100 40 200uA 0 IB=100uA 0 10 20 30 40 COLLECTOR-EMITTER VOLTAGE VCEsat 0.5 —— VCE 10 0.1 50 1 (V) 10 100 COLLECTOR CURRENT IC VBEsat 1.2 —— IC 600 (mA) IC 0.4 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) =10 0.3 0.2 Ta=100ć 0.1 Ta=25ć Ta=25ć 0.8 Ta=100ć 0.4 =10 1 10 COLLECTOR CURRENT IC COLLECTOR CURRENT IC (mA) 600 0.0 100 —— IC 600 1 10 (mA) 100 COLLECTOR CURRENT fT VBE IC 600 (mA) IC —— 300 COMMON EMITTER VCE=10V TRANSITION FREQUENCY fT (MHz) 0.0 100 Ta=100ć 10 Ta=25ć 1 250 200 150 100 COMMON EMITTER VCE=20V 50 Ta=25ć 0.1 0.0 0.2 0.4 0.6 0.8 0 1.0 1 10 BASE-EMMITER VOLTAGE VBE (V) 100 Cob/ Cib —— COLLECTOR CURRENT VCB/ VEB PC 750 —— 30 IC 70 (mA) Ta f=1MHz IE=0/IC=0 625 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) Ta=25ć Cib 10 Cob 1 0.1 1 REVERSE VOLTAGE www.jscj-elec.com 10 500 375 250 125 0 20 0 25 50 75 AMBIENT TEMPERATURE V (V) 3 100 Ta 125 150 (ć ) Rev. - 2.0  &78"-.*&(   ! A A1 b c D D1 E e e1 L  h (   ( -  6  6 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4.@ 4.700 DG DJ 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 &78**"2 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  &787DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0