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PBSS306NZ,135

PBSS306NZ,135

  • 厂商:

    RUBYCON(红宝石)

  • 封装:

    SOT-223-3

  • 描述:

    晶体管类型:NPN;集射极击穿电压(Vceo):100V;集电极电流(Ic):5.1A;功率(Pd):700mW;直流电流增益(hFE@Ic,Vce):100@2A,2V;

  • 数据手册
  • 价格&库存
PBSS306NZ,135 数据手册
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ. 1.2 Features „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ „ High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - 100 V - - 5.1 A - - 10.2 A - 43 60 mΩ VCEO collector-emitter voltage IC collector current ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = 4 A; IB = 200 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Symbol 4 2, 4 1 1 2 3 3 sym016 3. Ordering information Table 3. Ordering information Type number Package Name Description PBSS306NZ SC-73 plastic surface-mounted package with increased heatsink; SOT223 4 leads Version 4. Marking Table 4. Marking codes Type number Marking code PBSS306NZ S306NZ PBSS306NZ_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 2 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 100 V VCEO collector-emitter voltage open base - 100 V VEBO emitter-base voltage open collector - 5 V IC collector current - 5.1 A ICM peak collector current single pulse; tp ≤ 1 ms - 10.2 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 0.7 W [2] - 1.7 W [3] - 2.0 W Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa560 2.5 Ptot (W) 2.0 (1) (2) 1.5 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS306NZ_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 3 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 179 K/W [2] - - 74 K/W [3] - - 63 K/W - - 15 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa561 103 Zth(j-a) (K/W) δ=1 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS306NZ_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 4 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 006aaa562 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.20 10 0.33 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa563 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.20 0.33 10 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS306NZ_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 5 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 80 V; IE = 0 A - - 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 2 V; IC = 0.5 A [1] 200 330 - VCE = 2 V; IC = 1 A [1] 150 270 - VCE = 2 V; IC = 2 A [1] 100 175 - VCE = 2 V; IC = 4 A [1] 50 85 - VCE = 2 V; IC = 5 A [1] 30 60 - IC = 0.5 A; IB = 50 mA [1] - 27 40 mV IC = 1 A; IB = 50 mA [1] - 53 75 mV IC = 1 A; IB = 10 mA [1] - 100 150 mV IC = 2 A; IB = 40 mA [1] - 115 165 mV IC = 4 A; IB = 200 mA [1] - 170 240 mV IC = 4 A; IB = 400 mA [1] - 155 220 mV IC = 5.1 A; IB = 255 mA [1] - 215 300 mV - 43 60 mΩ VCEsat collector-emitter saturation voltage RCEsat collector-emitter saturation resistance IC = 4 A; IB = 200 mA [1] VBEsat base-emitter saturation IC = 1 A; IB = 100 mA voltage IC = 4 A; IB = 400 mA [1] - 0.81 0.9 V [1] - 0.94 1.05 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 2 A [1] - 0.78 0.85 V td delay time - 15 - ns tr rise time - 315 - ns ton turn-on time VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A - 330 - ns ts storage time - 240 - ns tf fall time - 290 - ns toff turn-off time - 530 - ns fT transition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz - 110 - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 23 40 pF [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PBSS306NZ_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 6 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 006aaa637 600 hFE 006aaa643 14 IC (A) 12 IB (mA) = 500 450 (1) 300 250 200 150 400 (2) 400 350 10 8 100 6 50 (3) 200 4 2 0 10−1 1 10 102 0 103 104 IC (mA) 0 1 2 3 4 5 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. 006aaa638 1.2 VBE (V) Collector current as a function of collector-emitter voltage; typical values 006aaa641 1.2 VBEsat (V) 0.8 0.8 0.4 (1) (1) (2) (2) 0 10−1 1 (3) 0.4 (3) 10 102 0 10−1 103 104 IC (mA) 1 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. 102 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values PBSS306NZ_2 Product data sheet 10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 7 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 006aaa639 1 006aaa640 10 VCEsat (V) VCEsat (V) 1 10−1 10−1 (1) (2) (1) (2) (3) 10−2 10−1 1 10 102 10−2 103 104 IC (mA) (3) 10−3 10−1 1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values 006aaa642 103 102 102 10 10 1 1 (1) (2) (3) 10−1 10 102 006aaa644 103 RCEsat (Ω) 1 (1) (2) (3) 10−1 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS306NZ_2 Product data sheet 103 104 IC (mA) Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) 10−2 10−1 102 Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C Fig 9. 10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 8 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A Fig 14. Test circuit for switching times PBSS306NZ_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 9 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 4.6 3 0.8 0.6 Dimensions in mm 0.32 0.22 04-11-10 Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS306NZ [1] Package SOT223 Description 8 mm pitch, 12 mm tape and reel 1000 4000 -115 -135 For further information and the availability of packing methods, see Section 14. PBSS306NZ_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 10 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 17. Wave soldering footprint PBSS306NZ_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 11 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS306NZ_2 20091211 Product data sheet - PBSS306NZ_1 Modifications: PBSS306NZ_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • Figure 16 “Reflow soldering footprint”: updated Figure 17 “Wave soldering footprint”: updated 20060920 Product data sheet - PBSS306NZ_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 12 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS306NZ_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 13 of 14 PBSS306NZ NXP Semiconductors 100 V, 5.1 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2009 Document identifier: PBSS306NZ_2
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