PBSS5320X,135

PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor 27 May 2019 Product data sheet 1. General description PNP low VCEsat transistor in a medium power flat lead SOT89 plastic package. NPN complement: PBSS4320X 2. Features and benefits • • • • • • SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements. AEC-Q101 qualified 3. Applications • • Power management • DC/DC converters • Supply line switching • Battery charger • LCD backlighting. Peripheral drivers • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -20 V IC collector current - - -3 A ICM peak collector current limited by Tj(max) - - -5 A hFE DC current gain VCE = -2 V; IC = -0.1 A 220 - - RCEsat collector-emitter saturation resistance IC = -3 A; IB = -300 mA - 90 105 [1] [2] [1] 2 [2] Device mounted on a ceramic printed-circuit board 7 cm , single-sided copper, tin-plated. Pulsed test: tp ≤ 300 μs; δ ≤ 0.02 mΩ PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline Graphic symbol C B 3 2 1 SOT89 E sym132 6. Ordering information Table 3. Ordering information Type number Package PBSS5320X Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code PBSS5320X S45 PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 2 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -20 V VCEO collector-emitter voltage open base - -20 V VEBO emitter-base voltage open collector - -5 V IC collector current - -3 A ICM peak collector current - -5 A IB base current - -0.5 A Ptot total power dissipation [2] - 550 mW [3] - 1 W [4] - 1.4 W [1] - 1.6 W [1] limited by Tj(max) Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] [4] 2 Device mounted on a ceramic printed-circuit board 7 cm , single-sided copper, tin-plated. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Ptot (W) mle372 2 (1) 1.6 (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 80 2 120 160 Tamb (°C) (1) Ceramic PCB; 7 cm mounting pad for collector 2 (2) FR4 PCB; 6 cm copper mounting pad for collector 2 (3) FR4 PCB; 1 cm copper mounting pad for collector (4) Standard footprint Fig. 1. Power derating curves PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 3 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) [1] [2] [3] [4] Conditions Min Typ Max Unit [1] - - 225 K/W [2] - - 125 K/W [3] - - 90 K/W [4] - - 80 K/W - - 16 K/W thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 2 Device mounted on a ceramic printed-circuit board 7 cm , single-sided copper, tin-plated. 006aaa244 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 Mounted on FR4 PCB; mounting pad for collector 1 cm Fig. 2. 1 10 102 2 tp (s) 103 Transient thermal impedance as a function of pulse duration; typical values 006aaa245 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 1 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 Mounted on FR4 PCB; mounting pad for collector 6 cm Fig. 3. 1 10 102 2 tp (s) 103 Transient thermal impedance as a function of pulse duration; typical values PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 4 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -20 V; IE = 0 A - - -100 nA VCB = -20 V; IE = 0 A; Tj = 150 °C - - -50 µA ICES collector-emitter cut-off VCE = -20 V; VBE = 0 V current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA hFE DC current gain VCE = -2 V; IC = -0.1 A 220 - - VCE = -2 V; IC = -0.5 A 220 - - VCEsat collector-emitter saturation voltage VCE = -2 V; IC = -1 A [1] 200 - - VCE = -2 V; IC = -2 A [1] 150 - - VCE = -2 V; IC = -3 A [1] 100 - - IC = -0.5 A; IB = -50 mA - - -70 mV IC = -1 A; IB = -50 mA - - -130 mV IC = -2 A; IB = -100 mA - - -230 mV [1] - - -300 mV [1] - 90 105 mΩ - - -1.1 V - - -1.2 V IC = -3 A; IB = -300 mA RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation IC = -2 A; IB = -100 mA voltage IC = -3 A; IB = -300 mA [1] VBEon base-emitter turn-on voltage VCE = -2 V; IC = -1 A -1.1 - - V fT transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 50 pF [1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02 PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 5 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor mle374 800 (1) hFE mle368 - 1.2 VBE (V) 600 (1) - 0.8 (2) (2) 400 (3) - 0.4 (3) 200 0 - 10- 1 -1 - 10 - 102 0 - 10- 1 - 103 - 104 IC (mA) - 10 - 102 - 103 - 104 IC (mA) VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = −2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 4. -1 DC current gain as a function of collector current; typical values Fig. 5. mle370 -1 Base-emitter voltage as a function of collector current; typical values VCEsat VCEsat (V) (V) - 10- 1 - 10- 1 (1) mle371 -1 (2) (3) - 10- 2 (1) (2) - 10- 2 (3) - 10- 3 - 10- 1 -1 - 10 - 102 - 103 - 104 IC (mA) - 10- 3 - 10- 1 IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 6. Product data sheet - 10 - 102 - 103 - 104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values PBSS5320X -1 Fig. 7. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 6 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor mle369 - 10 mle376 103 RCEsat (Ω) 102 VBEsat (V) 10 -1 (1) (2) 1 (3) (1) 10- 1 - 10- 1 - 10- 1 Fig. 8. -1 - 10 - 102 (2) 10- 2 - 10 1 - 103 - 104 IC (mA) -1 - 10 (3) - 102 - 103 - 104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Base-emitter saturation voltage as a function of Fig. 9. collector current; typical values Equivalent on-resistance as a function of collector current; typical values mle367 102 -5 IC (A) RCEsat (Ω) -4 10 (5) (6) (7) -3 (8) 1 (9) -2 (1) 10- 1 10- 2 - 10- 1 mle375 (1) (2) (3) (4) (2) (10) (3) -1 - 10 - 102 -1 0 - 103 - 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C 0 - 0.4 - 0.8 - 1.2 - 1.6 -2 VCE (V) Tamb = 25 °C (1) IB = −25 mA (2) IB = −22.5 mA (3) IB = −20 mA (4) IB = −17.5 mA (5) IB = −15 mA (6) IB = −12.5 mA (7) IB = −10 mA (8) IB = −7.5 mA (9) IB = −5 mA (10) IB = −2.5 mA Fig. 10. Equivalent on-resistance as a function of collector current; typical values Fig. 11. Collector current as a function of collectoremitter voltage; typical values PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 7 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 11. Test information Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 8 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 12. Package outline Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 B D A bp3 E 1 2 HE Lp 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION REFERENCES IEC SOT89 JEDEC JEITA TO-243 SC-62 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 Fig. 12. Package outline SOT89 PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 9 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 13. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 occupied area 1.1 (2×) 1.5 solder paste Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 13. Reflow soldering footprint for SOT89 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 14. Wave soldering footprint for SOT89 PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 10 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5320X v.3 20190527 Product data sheet - PBSS5320X v.2 Modifications: • • • Characteristics: VBEsat corrected from typical to maximum. The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. Legal texts have been adapted to the new company name where appropriate. PBSS5320X v.2 20041104 Product data sheet - PBSS5320X v.1 PBSS5320X v.1 20031127 Product data sheet - - PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 11 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor 15. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 12 / 13 PBSS5320X Nexperia 20 V, 3 A PNP low VCEsat (BISS) transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information.......................................................... 8 12. Package outline.......................................................... 9 13. Soldering................................................................... 10 14. Revision history........................................................11 15. Legal information......................................................12 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 27 May 2019 PBSS5320X Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2019 © Nexperia B.V. 2019. All rights reserved 13 / 13