PBSS8110T,215

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T QUICK REFERENCE DATA FEATURES • SOT23 package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage 100 V • High collector current capability: IC and ICM IC collector current (DC) 1 A • Higher efficiency leading to less heat generation ICM repetitive peak collector current 3 A RCEsat equivalent on-resistance 200 mΩ • Reduced printed-circuit board requirements. APPLICATIONS PARAMETER MAX. UNIT PINNING • Major application segments PIN – Automotive 42 V power – Telecom infrastructure – Industrial • Power management DESCRIPTION 1 base 2 emitter 3 collector – DC/DC converters – Supply line switching handbook, halfpage 3 – Battery charger 3 – LCD backlighting. • Peripheral drivers 1 – Driver in low supply voltage applications (e.g. lamps and LEDs). 1 – Inductive load driver (e.g. relays, buzzers and motors). Top view 2 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS9110T. MARKING MARKING CODE(1) TYPE NUMBER PBSS8110T *U8 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. ORDERING INFORMATION TYPE NUMBER PBSS8110T 2003 Dec 22 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 120 V VCEO collector-emitter voltage open base − 100 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 3 A IB base current (DC) − 300 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW Tamb ≤ 25 °C; note 2 − 480 mW limited by Tj max Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. MLE354 500 Ptot handbook, halfpage (mW) 400 (1) 300 (2) 200 100 0 0 40 80 160 120 Tamb (°C) (1) FR4 PCB; 1 cm2 copper mounting pad for collector. (2) Standard footprint. Fig.2 Power derating curves. 2003 Dec 22 3 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T THERMAL CHARACTERISTICS SYMBOL Rth( j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. mle356 103 (1) Zth (K/W) (2) (3) (4) (5) 102 (6) (7) δ= P (8) 10 tp T (9) t tp T (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) (1) δ = 1.0. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01. (2) δ = 0.75. (4) δ = 0.03. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.0. Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint. 2003 Dec 22 4 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T mle355 103 Zth (K/W) (1) (2) (3) 102 (4) (5) (6) δ= P (7) 10 (8) (9) (10) tp T t tp T 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) (1) δ = 1.0. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.03. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.0. Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm2 copper mounting pad. 2003 Dec 22 5 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 80 V; IE = 0 − − 100 nA VCB = 80 V; IE = 0; Tj = 150 °C − − 50 μA ICES collector-emitter cut-off current VCE = 80 V; VBE = 0 − − 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 − − 100 nA hFE DC current gain VCE = 10 V; IC = 1 mA 150 − − VCE = 10 V; IC = 250 mA 150 − 500 VCE = 10 V; IC = 500 mA; note 1 100 − − VCE = 10 V; IC = 1 A; note 1 80 − − IC = 100 mA; IB = 10 mA − − 40 mV IC = 500 mA; IB = 50 mA − − 120 mV IC = 1 A; IB = 100 mA; note 1 − − 200 mV VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA; note 1 − 165 200 mΩ VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.05 V VBEon base-emitter turn-on voltage VCE = 10 V; IC = 1 A − − 0.9 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 7.5 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2003 Dec 22 6 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T mle352 600 MLE362 1.2 handbook, halfpage VBE (V) hFE (1) (1) 400 0.8 (2) (2) (3) 200 0.4 (3) 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 DC current gain as a function of collector current; typical values. MLE366 1 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLE353 1 handbook, halfpage handbook, halfpage VCEsat (V) VCEsat (V) 10−1 10−1 (1) (2) (3) 10−2 10−1 1 10 102 10−2 10−1 103 104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. Tamb = 25 °C. Fig.7 Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Dec 22 7 1 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T mle357 10 MLE363 10 handbook, halfpage VCEsat (V) VBEsat (V) 1 1 (1) (2) 10−1 (3) 10−2 10−1 1 10 10−2 10−1 10−1 10−3 10−4 IC (mA) 10 102 103 104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 50. Tamb = 25 °C. Fig.9 1 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. MLE364 10 MLE365 1 handbook, halfpage handbook, halfpage VBEsat VBEsat (V) (V) 1 10−1 10−1 1 10 102 10−1 10−1 103 104 IC (mA) 10 10 102 103 104 IC (mA) IC/IB = 20. Tamb = 25 °C. IC/IB = 50. Tamb = 25 °C. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. Fig.12 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Dec 22 8 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T mle358 2 (2) IC RCEsat (3) (4) (5) (6) (A) 1.6 MLE359 103 handbook, halfpage (1) (Ω) 102 (7) 1.2 (8) 10 (9) 0.8 (10) 1 0.4 (1) 10−1 0 0 1 2 3 4 10−1 5 1 10 102 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) IB = 3500 μA. IB = 3150 μA. IB = 2800 μA. IB = 2450 μA. (5) (6) (7) (8) IB = 2100 μA. IB = 1750 μA. IB = 1400 μA. IB = 1050 μA. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. MLE360 RCEsat (Ω) (Ω) 102 102 10 10 1 1 1 10 102 MLE361 103 handbook, halfpage RCEsat 10−1 10−1 103 104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (9) IB = 700 μA. (10) IB = 350 μA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 103 handbook, halfpage (2) (3) 10−1 10−1 103 104 IC (mA) 1 10 102 103 104 IC (mA) IC/IB = 20. Tamb = 25 °C. IC/IB = 50. Tamb = 25 °C. Fig.15 Collector-emitter equivalent on-resistance as a function of collector current; typical values. Fig.16 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Dec 22 9 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Dec 22 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 10 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Dec 22 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp12 Date of release: 2003 Dec 22 Document order number: 9397 750 12008