PDTD113ZUX

PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 13 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PDTD113EU Package Nexperia JEITA JEDEC PNP complement SOT323 SC-70 - PDTB113EU PDTD113ZU PDTB113ZU PDTD123EU PDTB123EU PDTD123YU PDTB123YU PDTD143EU PDTB143EU PDTD143XU PDTB143XU PDTD114EU PDTB114EU Package configuration very small 1.2 Features     500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count   10 % resistor ratio tolerance  AEC-Q101 qualified  High temperature applications up to 175 °C 1.3 Applications  IC inputs control  Cost-saving alternative to BC807 or BC817 series transistors in digital applications  Switching loads PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current - - 500 mA R1 bias resistor 1 (input) R2 PDTD113EU 1 k PDTD113ZU 1 k PDTD123EU 2.2 k PDTD123YU 2.2 k PDTD143EU 4.7 k PDTD143XU 4.7 k PDTD114EU 10 k PDTD113EU 1 k PDTD113ZU 10 k PDTD123EU 2.2 k bias resistor 2 (base-emitter) PDTD123YU 10 k PDTD143EU 4.7 k PDTD143XU 10 k PDTD114EU 10 k 2. Pinning information Table 3. Pinning Pin Description 1 input (base) 2 GND (emitter) 3 Simplified outline Graphic symbol 3 3 R1 output (collector) 1 R2 1 2 2 sym007 3. Ordering information Table 4. Ordering information Type number Package PDTD1xxxU series PDTD1XXXU_SER Product data sheet Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 2 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 4. Marking Table 5. Marking codes Type number Marking code[1] PDTD113EU ZP* PDTD113ZU ZQ* PDTD123EU ZR* PDTD123YU ZS* PDTD143EU ZT* PDTD143XU ZU* PDTD114EU ZV* [1] * = placeholder for manufacturing site code 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V PDTD113EU VI IO PDTD1XXXU_SER Product data sheet PDTD113ZU - 5 V PDTD123EU - 10 V PDTD123YU - 5 V PDTD143EU - 10 V PDTD143XU - 7 V PDTD114EU - 10 V PDTD113EU 10 +10 V PDTD113ZU 5 +10 V PDTD123EU 10 +12 V PDTD123YU 5 +12 V PDTD143EU 10 +30 V PDTD143XU 7 +30 V PDTD114EU 10 +50 V - 500 mA input voltage output current All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 3 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb  25 C Min Max Unit [1] - 300 mW [2] - 425 mW Tj junction temperature - 175 C Tamb ambient temperature 55 +175 C Tstg storage temperature 55 +175 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. aaa-012426 500 Ptot (mW) (1) 400 (2) 300 200 100 0 -75 25 125 225 Tamb (°C) (1) FR4 PCB, 4-layer copper, standard footprint (2) FR4 PCB, single-sided copper, standard footprint. Fig 1. Power derating curves 6. Thermal characteristics Table 7. PDTD1XXXU_SER Product data sheet Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 500 K/W [2] - - 353 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 4 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012062 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, tin-plated and standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70; typical values aaa-012063 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, 4-layer copper, tin-plated and standard footprint. Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70; typical values PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 5 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Typ Max Unit VCB = 40 V; IE = 0 A - - 100 nA collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off VCE = 50 V; IB = 0 A current - - 0.5 A IEBO emitter-base cut-off current PDTD113EU - - 4.0 mA PDTD113ZU - - 0.8 mA PDTD123EU - - 2.0 mA PDTD123YU - - 0.65 mA PDTD143EU - - 0.9 mA PDTD143XU - - 0.6 mA PDTD114EU - - 0.4 mA PDTD113EU 33 - - PDTD113ZU 70 - - PDTD123EU 40 - - PDTD123YU 70 - - PDTD143EU 60 - - PDTD143XU 70 - - PDTD114EU 70 - - - - 100 mV PDTD113EU 0.6 1.1 1.5 V PDTD113ZU 0.3 0.6 1.0 V PDTD123EU 0.6 1.1 1.8 V PDTD123YU 0.4 0.6 1.0 V PDTD143EU 0.6 0.9 1.5 V PDTD143XU 0.5 0.75 1.1 V PDTD114EU 0.6 1.0 1.5 V PDTD113EU 1.0 1.4 1.8 V PDTD113ZU 0.4 0.8 1.4 V PDTD123EU 1.0 1.5 2.0 V PDTD123YU 0.5 1.0 1.4 V PDTD143EU 1.0 1.6 2.2 V PDTD143XU 1.0 1.25 2.0 V PDTD114EU 1.0 1.9 3.0 V DC current gain VEB = 5 V; IC = 0 A VCE = 5 V; IC = 50 mA VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA VI(off) off-state input voltage VCE = 5 V; IC = 100 A VI(on) Product data sheet Min ICBO hFE PDTD1XXXU_SER Conditions on-state input voltage VCE = 0.3 V; IC = 20 mA All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 6 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors Table 8. Characteristics …continued Tamb = 25 C unless otherwise specified. Symbol Parameter R1 Product data sheet Min Typ Max Unit PDTD113EU 0.7 1.0 1.3 k PDTD113ZU 0.7 1.0 1.3 k PDTD123EU 1.54 2.2 2.86 k PDTD123YU 1.54 2.2 2.86 k PDTD143EU 3.3 4.7 6.1 k PDTD143XU 3.3 4.7 6.1 k PDTD114EU 7.0 10 13 k PDTD113EU 0.9 1.0 1.1 PDTD113ZU 9.0 10 11 PDTD123EU 0.9 1.0 1.1 PDTD123YU 4.1 4.55 5.0 PDTD143EU 0.9 1 1.1 PDTD143XU 1.91 2.13 2.34 PDTD114EU 0.9 1.0 1.1 - 7 - pF - 225 - MHz bias resistor 1 (input) R2/R1 PDTD1XXXU_SER Conditions bias resistor ratio Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz [1] Characteristics of built-in transistor. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 [1] © Nexperia B.V. 2017. All rights reserved 7 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 006aaa310 103 hFE (1) (1) (2) (3) 102 006aaa311 10−1 (2) (3) VCEsat (V) 10 1 10−1 10−1 1 10 102 103 10−2 10 102 103 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 4. PDTD113EU: DC current gain as a function of collector current; typical values Fig 5. 006aaa312 10 PDTD113EU: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa313 10 VI(on) (V) VI(off) (V) (1) (1) 1 (2) 1 (2) (3) 10−1 10−1 1 (3) 10 102 103 10−1 10−1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C PDTD113EU: On-state input voltage as a function of collector current; typical values PDTD1XXXU_SER Product data sheet 10 IC (mA) (1) Tamb = 40 C Fig 6. 1 Fig 7. PDTD113EU: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 8 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012430 0.5 IC (A) Cc (pF) 2.05 0.4 aaa-012431 25 2.2 20 1.9 1.75 0.3 15 1.6 1.45 0.2 10 1.3 1.15 0.1 5 1 IB = 0.85 mA 0 0 0 1 2 3 4 5 0 10 20 30 40 50 VCB (V) VCE (V) Tamb = 25 C Fig 8. f = 1 MHz; Tamb = 25 C PDTD113EU: Collector current as a function of collector-emitter voltage; typical values Fig 9. PDTD113EU: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 10. PDTD113EU: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 9 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 006aaa314 103 (1) (1) (2) (3) hFE 006aaa315 10−1 (2) (3) VCEsat (V) 102 10 1 10−1 1 10 102 103 10−2 1 102 10 103 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 11. PDTD113ZU: DC current gain as a function of collector current; typical values 006aaa316 10 Fig 12. PDTD113ZU: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa317 1 (1) (2) VI(on) (V) VI(off) (V) 1 (3) (1) (2) (3) 10−1 10−1 1 10 102 103 10−1 10−1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 13. PDTD113ZU: On-state input voltage as a function of collector current; typical values Product data sheet 10 IC (mA) (1) Tamb = 40 C PDTD1XXXU_SER 1 Fig 14. PDTD113ZU: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 10 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012432 0.5 1.7 IC (A) aaa-012437 25 Cc (pF) 1.53 0.4 20 1.36 1.19 0.3 15 1.02 0.85 0.2 10 0.68 0.51 0.1 5 0.34 IB = 0.17 mA 0 0 1 2 3 4 0 5 0 10 20 30 40 50 VCB (V) VCE (V) Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 15. PDTD113ZU: Collector current as a function of collector-emitter voltage; typical values Fig 16. PDTD113ZU: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 17. PDTD113ZU: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 11 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 006aaa318 103 hFE aaa-012447 10-1 (1) (2) (3) (1) (2) VCEsat (V) 102 (3) 10 1 10−1 10−1 1 10 102 103 10-2 1 102 10 103 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 18. PDTD123EU: DC current gain as a function of collector current; typical values 006aaa320 10 Fig 19. PDTD123EU: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa321 10 VI(on) (V) VI(off) (V) (1) (1) (2) 1 (2) 1 (3) (3) 10−1 10−1 1 10 102 103 10−1 10−1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 20. PDTD123EU: On-state input voltage as a function of collector current; typical values Product data sheet 10 IC (mA) (1) Tamb = 40 C PDTD1XXXU_SER 1 Fig 21. PDTD123EU: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 12 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012433 0.5 1.9 IC (A) Cc (pF) 1.75 0.4 aaa-012438 25 20 1.6 1.45 0.3 15 1.3 1.15 1 0.2 10 0.85 0.7 0.1 5 IB = 0.55 mA 0 0 0 1 2 3 4 5 0 10 20 30 40 50 VCB (V) VCE (V) Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 22. PDTD123EU: Collector current as a function of collector-emitter voltage; typical values Fig 23. PDTD123EU: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 24. PDTD123EU: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 13 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 006aaa322 103 (1) (1) (2) (3) hFE aaa-012448 10-1 (2) VCEsat (V) (3) 102 10 1 10−1 1 10 102 103 10-2 102 10 1 103 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 25. PDTD123YU: DC current gain as a function of collector current; typical values 006aaa324 10 Fig 26. PDTD123YU: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa325 10 VI(on) (V) VI(off) (V) (1) 1 (1) 1 (2) (2) (3) 10−1 10−1 1 (3) 10 102 103 10−1 10−1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 27. PDTD123YU: On-state input voltage as a function of collector current; typical values Product data sheet 10 IC (mA) (1) Tamb = 40 C PDTD1XXXU_SER 1 Fig 28. PDTD123YU: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 14 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012434 0.5 IC (A) Cc (pF) 1.35 0.4 aaa-012439 25 1.5 20 1.2 1.05 0.9 0.3 15 0.75 0.6 0.2 10 0.45 0.3 0.1 5 IB = 0.15 mA 0 0 0 1 2 3 4 5 0 10 20 30 40 50 VCB (V) VCE (V) Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 29. PDTD123YU: Collector current as a function of collector-emitter voltage; typical values Fig 30. PDTD123YU: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 31. PDTD123YU: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 15 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012442 103 aaa-012444 10-1 (1) hFE (1) (2) (2) VCEsat (V) (3) (3) 102 10 1 10-1 1 10 102 103 10-2 1 102 10 103 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 32. PDTD143EU: DC current gain as a function of collector current; typical values aaa-012449 102 Fig 33. PDTD143EU: Collector-emitter saturation voltage as a function of collector current; typical values aaa-012573 10 VI(on) (V) VI(off) (V) 10 (1) (1) (2) (2) 1 (3) (3) 1 10-1 10-1 1 10 102 103 10-1 10-1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 34. PDTD143EU: On-state input voltage as a function of collector current; typical values Product data sheet 10 IC (mA) (1) Tamb = 40 C PDTD1XXXU_SER 1 Fig 35. PDTD143EU: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 16 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012435 0.5 IC (A) Cc (pF) 1.55 0.4 aaa-012440 20 1.7 16 1.4 1.25 1.1 0.3 12 0.95 0.8 0.2 8 0.65 0.5 0.1 4 IB = 0.35 mA 0 0 0 1 2 3 4 5 0 10 20 30 40 50 VCB (V) VCE (V) Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 36. PDTD143EU: Collector current as a function of collector-emitter voltage; typical values Fig 37. PDTD143EU: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 38. PDTD143EU: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 17 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012441 103 aaa-012445 10-1 (1) hFE (1) (2) (2) VCEsat (V) (3) (3) 102 10 1 10-1 1 10 102 103 10-2 1 102 10 103 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 39. PDTD143XU: DC current gain as a function of collector current; typical values aaa-012450 102 Fig 40. PDTD143XU: Collector-emitter saturation voltage as a function of collector current; typical values aaa-012574 10 VI(on) (V) VI(off) (V) 10 (1) (1) (2) 1 (3) (2) (3) 1 10-1 10-1 1 10 102 103 10-1 10-1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 41. PDTD143XU: On-state input voltage as a function of collector current; typical values Product data sheet 10 IC (mA) (1) Tamb = 40 C PDTD1XXXU_SER 1 Fig 42. PDTD143XU: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 18 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012071 0.5 IC (A) Cc (pF) 1.45 0.4 aaa-012072 20 1.6 16 1.3 1.15 0.3 12 1.0 0.85 0.7 0.2 8 0.55 0.1 4 0.4 IB = 0.25 mA 0 0 0 1 2 3 4 5 0 10 20 30 40 50 VCB (V) VCE (V) Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 43. PDTD143XU: Collector current as a function of collector-emitter voltage; typical values Fig 44. PDTD143XU: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 45. PDTD143XU: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 19 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012443 103 aaa-012446 10-1 (1) hFE (2) (1) VCEsat (V) (3) (2) (3) 102 10 1 10-1 1 10 102 103 10-2 1 102 10 103 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 46. PDTD114EU: DC current gain as a function of collector current; typical values aaa-012451 102 Fig 47. PDTD114EU: Collector-emitter saturation voltage as a function of collector current; typical values aaa-012575 10 VI(on) (V) VI(off) (V) 10 (1) (1) (2) (2) 1 (3) (3) 1 10-1 10-1 1 10 102 103 10-1 10-1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 48. PDTD114EU: On-state input voltage as a function of collector current; typical values Product data sheet 10 IC (mA) (1) Tamb = 40 C PDTD1XXXU_SER 1 Fig 49. PDTD114EU: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 20 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors aaa-012073 0.5 IC (A) Cc (pF) 1.55 0.4 aaa-012074 10 1.7 8 1.4 1.25 1.1 0.3 6 0.95 0.8 0.2 4 0.65 0.5 0.1 2 IB = 0.35 mA 0 0 0 1 2 3 4 5 0 10 20 30 40 50 VCB (V) VCE (V) Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 50. PDTD114EU: Collector current as a function of collector-emitter voltage; typical values Fig 51. PDTD114EU: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 52. PDTD114EU: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 21 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm 04-11-04 Fig 53. Package outline PDTD1xxxU series (SOT323/SC-70) PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 22 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 10. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) sot323_fr Dimensions in mm Fig 54. Reflow soldering footprint PDTD1xxxU series (SOT323/SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Dimensions in mm Fig 55. Wave soldering footprint PDTD1xxxU series (SOT323/SC-70) PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 23 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTD1XXXU_SER v.1 20140513 Product data sheet - - PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 24 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PDTD1XXXU_SER Product data sheet Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 25 of 27 PDTD1xxxU series Nexperia 500 mA, 50 V NPN resistor-equipped transistors No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 12.4 Trademarks Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PDTD1XXXU_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 May 2014 © Nexperia B.V. 2017. All rights reserved 26 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 22 Quality information . . . . . . . . . . . . . . . . . . . . . 22 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24 Legal information. . . . . . . . . . . . . . . . . . . . . . . 25 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Contact information. . . . . . . . . . . . . . . . . . . . . 26 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 13 May 2014