PSMN3R7-100BSE
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
3 September 2018
Product data sheet
1. General description
Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified
to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low
RDSon and a very strong linear-mode (SOA) performance.
PSMN3R7-100BSE complements the latest "hot-swap" controllers - robust enough to withstand
2
substantial inrush currents during turn on, low RDSon to minimize I R losses and deliver optimum
efficiency when turned fully ON.
2. Features and benefits
•
•
Fully optimized Safe Operating Area (SOA) for superior linear mode operation
2
Low RDSon for low I R conduction losses
3. Applications
•
•
•
•
•
Hot swap
Load switch
Soft start
E-fuse
Telecommunication systems based on a 48 V backplane/supply rail
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
100
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
120
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
-
780
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
405
W
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
3.36
3.95
mΩ
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
-
45.2
77
nC
-
176
246
nC
ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
-
-
542
mJ
[1]
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
[1]
non-repetitive drainsource avalanche
energy
Continuous current is limited by package
PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
D
drain[1]
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
mb
D
G
mbb076
2
1
S
3
D2PAK (SOT404)
[1]
It is not possible to make connection to pin 2.
6. Ordering information
Table 3. Ordering information
Type number
Package
PSMN3R7-100BSE
Name
Description
Version
D2PAK
plastic, single-ended surface-mounted package (D2PAK); 3
terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x
4.3 mm body
SOT404
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
-20
20
V
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
405
W
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1]
-
120
A
VGS = 10 V; Tmb = 100 °C; Fig. 2
[1]
-
120
A
-
780
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering
temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
120
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
780
A
-
542
mJ
Avalanche ruggedness
EDS(AL)S
[1]
non-repetitive drainID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
Continuous current is limited by package
PSMN3R7-100BSE
Product data sheet
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
03aa16
120
aaa-028866
200
ID
(A)
Pder
(%)
150
80
(1)
100
40
50
0
0
50
100
150
Tmb (°C)
0
200
0
25
50
75
100
125
150 175
Tmb (°C)
200
VGS ≥ 10 V
(1) Capped at 120A due to package
Fig. 1.
ID
(A)
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
Continuous drain current as a function of
mounting base temperature
aaa-028222
103
Limit RDSon = VDS / ID
tp = 10 µs
102
100 µs
DC
1 ms
10
10 ms
100 ms
1
10-1
10-1
1
10
102
VDS (V)
103
Tmb = 25 °C; IDM is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN3R7-100BSE
Product data sheet
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
IAL
(A)
aaa-028867
103
102
(1)
(2)
10
1
10-3
10-2
10-1
1
tAL (ms)
10
(1) Tj (init) = 25 °C; (2) Tj (init) = 100 °C
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 5
junction to mounting
base
Conditions
-
0.3
0.37
K/W
Rth(j-a)
thermal resistance from
junction to ambient
-
50
-
K/W
aaa-028868
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
P
10-2 0.02
δ=
tp
T
single shot
t
tp
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
T
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
PSMN3R7-100BSE
Product data sheet
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 10;
Fig. 11
2
2.66
4
V
ID = 1 mA; VDS=VGS; Tj = 175 °C;
Fig. 11
1
-
-
V
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 11
-
-
4.6
V
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.026
2
µA
VDS = 100 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
3.36
3.95
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
-
-
7.3
mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13
-
-
10.7
mΩ
f = 1 MHz
0.49
0.98
1.96
Ω
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
-
176
246
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
71
99
nC
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
-
49.5
74
nC
-
30
-
nC
VGS(th)
IDSS
IGSS
RDSon
RG
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGS(th)
pre-threshold gatesource charge
QGS(th-pl)
post-threshold gatesource charge
-
19.7
-
nC
QGD
gate-drain charge
-
45.2
77
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15
-
4.9
-
V
Ciss
input capacitance
-
11692 16370 pF
Coss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
657
887
pF
Crss
reverse transfer
capacitance
-
353
494
pF
td(on)
turn-on delay time
-
40
60
ns
tr
rise time
-
64
97
ns
td(off)
turn-off delay time
-
98
147
ns
tf
fall time
-
69
104
ns
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.79
1.2
V
trr
reverse recovery time
-
70
91
ns
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V; Fig. 18
-
195
254
nC
PSMN3R7-100BSE
Product data sheet
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
aaa-028869
160
ID
(A)
10 V
7V
aaa-028870
30
RDSon
(mΩ)
25
6.5 V
120
20
6V
80
15
VGS = 5.5 V
10
40
5V
5
4.5 V
0
Fig. 6.
3.5 V
0
1
2
3
VDS (V)
0
4
0
4
8
12
16
VGS (V)
20
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Output characteristics; drain current as a
Fig. 7.
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-028871
100
gfs
(S)
aaa-028872
160
ID
(A)
80
120
60
80
40
40
20
0
175°C
0
20
40
60
80
ID (A)
0
100
Tj = 25 °C; VDS = 8 V
Fig. 8.
Product data sheet
1
2
3
4
5
6
7
VGS (V)
8
VDS = 8 V
Forward transconductance as a function of
drain current; typical values
PSMN3R7-100BSE
0
Tj = 25°C
Fig. 9.
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
aaa-028873
10-1
ID
(A)
VGS(th)
(V)
10-2
aaa-028874
5
4
10-3
Min
Typ
Max
3
Max
Typ
10-4
2
Min
10-5
10-6
1
0
1
2
3
4
0
-60
5
VGS (V)
Tj = 25 °C; VDS = 5 V
5.5 V
30
60
90
120 150
Tj (°C)
180
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
aaa-028875
5V
0
ID = 1 mA ; VDS = VGS
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
30
RDSon
(mΩ)
25
-30
a
6V
003aak756
3
2.4
6.5 V
20
1.8
15
10
7V
5
8V
0
1.2
0.6
VGS = 10 V
0
20
40
60
80
100
120 140
ID (A)
0
-60
160
-30
0
30
60
90
120 150
Tj (°C)
180
Tj = 25 °C
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN3R7-100BSE
Product data sheet
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
VGS
(V)
aaa-028877
10
VDS
ID
8
VGS(pl)
80 V
6
50 V
VGS(th)
VDS = 20 V
4
VGS
QGS1
2
0
QGS2
0
40
80
120
160
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
200
Tj = 25 °C; ID = 25 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-028878
105
C
(pF)
aaa-028879
160
IS
(A)
120
Ciss
104
80
103
Coss
40
175°C
Crss
102
10-1
1
10
VDS (V)
0
102
VGS = 0 V; f = 1 MHz
0
0.2
0.4
Tj = 25°C
0.6
0.8
1
VSD (V)
1.2
VGS = 0 V
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source-drain (diode forward) current as a
as a function of drain-source voltage; typical
function of source-drain (diode forward)
values
voltage; typical values
003aal160
ID
(A)
trr
ta
tb
0
0.25 IRM
IRM
t (s)
Fig. 18. Reverse recovery timing definition
PSMN3R7-100BSE
Product data sheet
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
10. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
b2
c
b
e
e
Q
0
5 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
max
nom
min
A
A1
b
b2
c
4.5
1.40 0.85 1.45 0.64
4.1
1.27 0.60 1.05 0.46
D
D1
E
e
11
1.6
10.3
1.2
9.7
2.54
HD
Lp
Q
15.8
2.9
2.6
14.8
2.1
2.2
sot404_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
06-03-16
13-02-25
SOT404
Fig. 19. Package outline D2PAK (SOT404)
PSMN3R7-100BSE
Product data sheet
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
11. Soldering
Footprint information for reflow soldering of D2PAK package
SOT404
10.85
10.60
10.50
1.50
0.30
2.25 2.15
8.15
8.35
8.275
1.50
4.60
16.35
0.30
0.20
1.70
7.40
4.85
5.40
7.50
7.95
8.075
3.10 3.00
0.20
2.54
1.55
1.30
1.20
occupied area
solder resist
solder lands
solder paste
Dimensions in mm
Issue date
17-05-24
17-05-26
sot404_fr
Fig. 20. Reflow soldering footprint for D2PAK (SOT404)
PSMN3R7-100BSE
Product data sheet
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
12. Legal information
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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PSMN3R7-100BSE
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
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Customers are responsible for the design and operation of their applications
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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3 September 2018
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PSMN3R7-100BSE
Nexperia
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 2
8. Thermal characteristics............................................... 4
9. Characteristics.............................................................. 4
10. Package outline.......................................................... 9
11. Soldering................................................................... 10
12. Legal information......................................................11
©
Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 3 September 2018
PSMN3R7-100BSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 September 2018
©
Nexperia B.V. 2018. All rights reserved
12 / 12