PXT2907A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT2907A TRANSISTOR (PNP) FEATURES z Switching and Linear Amplification z High Current and Low Voltage z Complement to PXT2222A 1. BASE 2. COLLECTOR 3. EMITTER MARKING:p2F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.01 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.01 µA DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Delay time td Rise time tr Storage time ts Fall time tf Transition frequency fT www.cj-elec.com VCE=-10V, IC=-0.1mA 75 VCE=-10V, IC=-1mA 100 VCE=-10V, IC=-10mA 100 VCE=-10V, IC=-150mA 100 VCE=-10V, IC=-500mA 50 300 IC=-500mA,IB=-50mA -1.6 V IC=-150mA,IB=-15mA -0.4 V IC=-500mA,IB=-50mA -2.6 V IC=-150mA,IB=-15mA -1.3 V 12 ns 30 ns 300 ns 65 ns VCC=-30V, IC=-150mA, IB1=- IB2=-15mA VCE=-10V,IC=-20mA, f=100MHz 1 200 MHz D,Nov,2015 Typical Characteristics Static Characteristic hFE —— IC 1000 -1.8mA -1.6mA -1.4mA hFE -2mA COMMON EMITTER Ta=25℃ -1.2mA DC CURRENT GAIN (mA) -300 COLLECTOR CURRENT -350 IC -400 -250 -1mA -200 -0.8mA -150 -0.6mA o Ta=100 C o Ta=25 C 100 -100 -0.4mA -50 VCE= -10V IB=-0.2mA -0 -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE -14 Ta=25℃ -600 VCEsat —— -800 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -800 -100 COLLECTOR CURRENT (V) VCE VBEsat —— IC -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -12 10 -10 Ta=100℃ -400 IC -600 (mA) IC -600 -400 Ta=100℃ -200 Ta=25℃ β=10 β=10 -200 -1 -10 IC —— IC (mA) -600 -600 -100 COLLECTOR CURRENT IC -0 -1 -10 (mA) VBE Cob / Cib 100 —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 -500 o (pF) Ta=25 C Cib CAPACITANCE C -400 COLLECTOR CURRENT -600 -100 COLLECTOR CURRENT o Ta=100 C -300 Ta=25℃ -200 10 Cob -100 VCE=-10V -0 -200 -400 -600 -800 BASE-EMITTER VOLTAGE fT 500 —— 1 -0.1 -1000 IC COLLECTOR POWER DISSIPATION Pc (W) o Ta=25 C 400 fT (MHz) Pc 0.6 VCE=-10V TRANSITION FREQUENCY -1 -10 REVERSE VOLTAGE VBE(mV) 300 200 100 —— V -20 (V) Ta 0.5 0.4 0.3 0.2 0.1 0 0.0 -0 -20 -40 -60 COLLECTOR CURRENT www.cj-elec.com -80 IC -100 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) D,Nov,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 3 D,Nov,2015 SOT-89-3L Tape and Reel www.cj-elec.com 4 D,Nov,2015