KM681001B

PRELIMINARY KM681001B Document Title 128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. Operated at Commercial and Industrial Temperature Range. CMOS SRAM Revision History Rev . No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet. 1. Delete Preliminary. 2. Delete 17ns, L-version and Industrial Temperature Part. 3. Delete Voh1=3.95V. 4. Delete Data Retention Characteristics and Wave form. 5. Relex operating current Speed Previous Now 15ns 130mA 125mA 17ns 120mA 20ns 110mA 123mA Draft Data Feb. 1st, 1997 Jun. 1st, 1997 Remark Design Target Preliminary Rev. 2.0 Feb. 6th. 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Rev 2.0 February 1998 -1- PRELIMINARY KM681001B 128K x 8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time 15, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating KM681001B - 15 : 125mA(Max.) KM681001B - 20 : 123mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inputs and Outputs • Fully Static Operation - No Clock or Refresh required • Three State Outputs • Standard Pin Configuration KM681001BJ : 32-SOJ-400 KM681001BSJ : 32-SOJ-300 CMOS SRAM GENERAL DESCRIPTION The KM681001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The KM681001B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM681001B is packaged in a 400/300 mil 32-pin plastic SOJ. PIN CONFIGURATION(Top View) N.C A0 A1 1 2 3 4 5 6 7 8 9 10 11 12 32 Vcc 31 A16 30 CS2 29 WE 28 A15 27 A14 26 A13 FUNCTIONAL BLOCK DIAGRAM A2 A3 A4 Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 Pre-Charge Circuit A5 A6 A7 A8 SOJ 25 A12 24 OE 23 A11 22 CS1 21 I/O8 20 I/O7 19 I/O6 18 I/O5 17 I/O4 Row Select Memory Array 512 Rows 256x8 Columns A9 A10 I/O1 13 I/O2 14 I/O3 15 Vss 16 I/O1 ~ I/O8 Data Cont. CLK Gen. I/O Circuit Column Select A9 A10 A11 A12 A13 A14 A15 A16 CS2 CS1 WE OE PIN FUNCTION Pin Name A0 - A16 WE CS1, CS2 OE I/O1 ~ I/O8 VCC VSS N.C Pin Function Address Inputs Write Enable Chip Selects Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection -2- Rev 2.0 February 1998 PRELIMINARY KM681001B ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Symbol VIN, VOUT VCC PD TSTG TA Rating -0.5 to 7.0 -0.5 to 7.0 1.0 -65 to 150 0 to 70 Unit V V CMOS SRAM W °C °C * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.2 -0.5* Typ 5.0 0 Max 5.5 0 VCC+0.5** 0.8 Unit V V V V NOTE: * VIL(Min) = -2.0V a.c(Pulse Width≤10ns) for I≤20mA ** VIH(Max) = VCC + 2.0V a.c (Pulse Width≤10ns) for I≤20mA DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC Test Conditions VIN = VSS to VCC CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VOUT = VSS to VCC Min. Cycle, 100% Duty CS1=VIL, CS2=VIH, VIN=VIH or VIL, IOUT=0mA Min. Cycle, CS1=VIH or CS2=VIL f=0MHz, CS1≥VCC-0.2V or CS2≤0.2V, VIN≥VCC-0.2V or VIN≤0.2V IOL=8mA IOH=-4mA 15ns 20ns Min -2 -2 2.4 Max 2 2 125 123 20 5 0.4 V V mA Unit µA µA mA Standby Current ISB ISB1 Output Low Voltage Level Output High Voltage Level VOL VOH CAPACITANCE*(TA=25°C, f=1.0MHz) Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Conditions VI/O=0V VIN=0V MIN Max 8 6 Unit pF pF * NOTE : Capacitance is sampled and not 100% tested. -3- Rev 2.0 February 1998 PRELIMINARY KM681001B AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.) TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads Value 0V to 3V 3ns 1.5V See below CMOS SRAM Output Loads(A) +5.0V 480Ω DOUT 255Ω 30pF* Output Loads(B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +5.0V 480Ω DOUT 255Ω 5pF* * Including Scope and Jig Capacitance READ CYCLE Parameter Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output Chip Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Chip Selection to Power Up Time Chip Selection to Power DownTime NOTE : tCO =tCO1, tCO2 / tLZ=tLZ1, tLZ2 / tHZ=tHZ1, tHZ2 Symbol tRC tAA tCO* tOE tLZ* tOLZ tHZ* tOHZ tOH tPU tPD KM681001B-15 Min 15 3 0 0 0 3 0 Max 15 15 8 6 6 15 KM681001B-20 Min 20 3 0 0 0 3 0 Max 20 20 10 8 8 20 Unit ns ns ns ns ns ns ns ns ns ns ns -4- Rev 2.0 February 1998 PRELIMINARY KM681001B WRITE CYCLE Parameter Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width(OE High) Write Pulse Width(OE Low) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z NOTE : tWR = tWR1, tWR2 CMOS SRAM Symbol tWC tCW tAS tAW tWP tWP1 tWR* tWHZ tDW tDH tOW KM681001B-15 Min 15 10 0 10 10 15 0 0 7 0 3 Max 8 KM681001B-20 Min 20 12 0 12 12 20 0 0 9 0 3 Max 10 Unit ns ns ns ns ns ns ns ns ns ns ns TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH) tRC Address tOH Data Out Previous Valid Data tAA Valid Data -5- Rev 2.0 February 1998 PRELIMINARY KM681001B TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) tRC Address tAA CS1 tCO CS2 tOE OE tOLZ tLZ(4,5) Valid Data ICC ISB NOTES(READ CYCLE) 1. WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device. 5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS1=VIL and CS2=VIH. 7. Address valid prior to coincident with CS1 transition low and CS2 transition high. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. CMOS SRAM tHZ(3,4,5) tOHZ tOH Data out VCC Current tPU 50% tPD 50% TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock) tWC Address tAW OE tCW(3) CS1 tWR(5) CS2 tAS(4) WE tDW Data in High-Z tOHZ(6) Data out High-Z(8) Valid Data tDH tWP(2) -6- Rev 2.0 February 1998 PRELIMINARY KM681001B TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed) CMOS SRAM tWC Address tAW tCW(3) CS1 tWR(5) CS2 tAS(4) WE tDW Data in High-Z tWHZ(6) Data out High-Z(8) Valid Data tOW (10) (9) tWP1(2) tDH TIMING WAVEFORM OF WRITE CYCLE(3) (CS1 = Controlled) tWC Address tAW tCW(3) CS1 tAS(4) CS2 tWP(2) WE tDW Data in tDH tWR(5) High-Z tLZ tWHZ(6) Valid Data High-Z Data out High-Z High-Z(8) -7- Rev 2.0 February 1998 PRELIMINARY KM681001B TIMING WAVEFORM OF WRITE CYCLE(4) (CS2 = Controlled) CMOS SRAM tWC Address tAW CS1 tAS(4) CS2 tWP(2) WE tDW Data in tLZ Data out tWHZ(6) Valid Data tDH tCW(3) tWR(5) High-Z High-Z NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low CS1 , a high CS2 and a low WE. A write begins at the latest transition CS1 going low, CS2 going high and WE going low ; A write ends at the earliest transition CS1 going high or CS2 going low or WE going high. tWP is measured from the beginning of write to the end of write. 3. tCW is measured from the later of CS1 going low or CS2 going high to end of write. 4. tAS is measured from the address valid to the beginning of write. 5. tWR is measured from the end of write to the address change. tWR1 applied in case a write ends as CS1 or WE going high. tWR2 applied in case a write ends as CS2 going low. 6. If OE, CS1 , CS2 and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If CS1 goes low and CS2 goes high simultaneously with WE going or after WE going low, the outputs remain high impedance state. 9. Dout is the read data of the new address. 10.When CS1 is low and CS2 is high : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied. FUNCTIONAL DESCRIPTION CS1 H X L L L CS2 X L H H H WE X X H H L OE X* X H L X Mode Not Select Not Select Output Disable Read Write I/O Pin High-Z High-Z High-Z DOUT DIN Supply Current ISB, ISB1 ISB, ISB1 ICC ICC ICC * NOTE : X means Don′t Care. -8- Rev 2.0 February 1998 PRELIMINARY KM681001B PACKAGE DIMENSIONS 32-SOJ-300 #32 #17 CMOS SRAM Units:millimeters/Inches 8.64 ±0.12 0.340 ± 0.005 7.62 0.300 6.86 ±0.25 0.270 ±0.010 0.20 #1 21.36 MAX 0.841 20.95 ±0.12 0.825 ± 0.005 1.14 ) 0.045 1.32 ( ) 0.052 ( 0.43 + 0.10 -0.05 +0.10 -0.05 #16 0.69 MIN 0.027 0.008 +-0.004 0.002 3.76 MAX 0.148 0.10 MAX 0.004 ( 0.95 ) 0.0375 0.017 +-0.004 0.002 1.27 0.050 0.71 +0.10 -0.05 0.028+-0.004 0.002 32-SOJ-400 #32 #17 Units:millimeters/Inches 10.1 6 0.40 0 11.18 ± 0.12 0.440 ±0.005 9.40 ±0.25 0.370 ±0.010 0.20 #1 21.36 MAX 0.841 20.95 ±0.12 0.825 ±0.005 ( 1.30 ) 0.051 ( 1.30 ) 0.051 0.43 +0.10 -0.05 + 0.10 -0.05 #16 0.69 0.027 MIN 0.008 +-0.004 0.002 3.76 MAX 0.148 0.10 MAX 0.004 ( 0.95 ) 0.0375 0.017 +-0.004 0.002 1.27 0.050 0.71 +0.10 -0.05 0.028 +-0.004 0.002 -9- Rev 2.0 February 1998