2SC3832

2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3832 500 400 10 7(Pulse14) 2 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ (Ta=25°C) 2SC3832 Unit External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 µA µA V V MHz pF 2.5 12.0min 4.0max 16.0±0.7 8.8±0.2 a b ø3.75±0.2 V 1.35 0.65 +0.2 -0.1 2.5 BCE 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 66.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 7 0m V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E(s a t) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 7 (V C E =4V) 60 0m A 80 6 A 6 Collector Current I C (A) V B E (sat) 1 –55˚C (Cas e Temp) mp) ) as e 2 5 Tem p) ˚C 400mA Collector Current I C (A) 300mA 4 200mA Tem p) e Te 25˚C (Cas 125˚C (Case 4 ) emp se T 25˚C (Ca Temp 125 ˚C 2 2 12 5 ˚C V C E (sat) 0 0.02 0.05 0.1 0.5 1 –5 5˚ C 0 0 1 2 3 4 57 0 0 0.2 0.4 0.6 0.8 –55˚C (C (Cas I B =100mA (Ca e Te se mp) 1.0 1.2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 θ j - a (˚ C/W) h FE – I C Characteristics (Typical) 10 t on •t stg • t f – I C Characteristics (Typical) t on • t s t g• t f ( µ s) θ j-a – t Characteristics 4 DC Cur rent Gain h F E 25˚C V C C 2 00V I C :I B1 :–I B 2 =10:1:2 1 0.5 t on tf 0.1 0.2 0.5 1 5 –30 ˚C Transient Thermal Resistance 125˚ C 5 t s tg Sw it ching Time 1 10 0.5 0.3 5 0.02 0.05 0.1 0.5 1 5 7 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 Reverse Bias Safe Operating Area 20 50 P c – T a Derating M aximum Power Dissipa ti on P C (W) 10 5 Collect or Curr ent I C (A) 0µ s 10 5 Collector Curren t I C (A) 40 W ith In fin 30 ite he at si 1 1 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% nk 20 0.5 Without Heatsink Natural Cooling 0.5 10 Without Heatsink 0 25 50 75 100 125 150 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 0.1 5 10 50 100 500 2 0 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 72