2SC4297

2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4297 500 400 10 12(Pulse24) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) 2SC4297 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V V MHz pF Unit µA 23.0±0.3 V 9.5±0.2 µA a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.7 IB2 (A) –1.4 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 12 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 12 (V CE =4V) 1A 10 Collector Current I C (A) 80 0m A 60 0m A 10 1 –55˚C (Case 25˚C (Cas 125˚C Collector Current I C (A) V B E (sat) 8 400m A Temp) 8 p) 6 e Temp) as e 2 5 Temp ) ˚C (Cas 4 4 (Ca 200mA I B =100mA 2 12 5˚ V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 –5 5˚ C 2 0 0 1 2 3 4 10 0 0 0.2 0.4 0.6 0.8 –55˚C C 25˚C 125 (C 1.0 (Case ˚C Temp e Te se Te (Case mp) Tem mp) 6 ) Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 8 θ j - a (˚ C/W) h FE – I C Characteristics (Typical) t on• t s t g • t f ( µ s) 5 t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 2 125˚C DC Cur rent Gain h F E Transient Thermal Resistance t s tg V C C 2 00V I C :I B1 :–I B 2 =10:1:2 1 0.5 t on 25˚C –30˚C 1 10 Swi tchi ng T im e 0.5 tf 0.1 0.5 1 Collector Current I C (A) 5 10 5 0.02 0.05 0.1 0.5 1 5 10 12 0.1 1 10 Time t(ms) 100 3.0 1.2 1000 Collector Current I C (A) Safe Operating Area (Single Pulse) 30 10 0µ s Reverse Bias Safe Operating Area 30 80 P c – T a Derating 10 Co lle ctor Cu rre nt I C ( A) Collector Curr ent I C (A) 5 10 5 M aximum Power Dissipa ti on P C (W) 60 W ith In fin ite he 40 at si nk 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% Without Heatsink Natural Cooling 20 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 0.1 5 10 50 100 500 3.5 0 Without Heatsink 0 50 100 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 95