SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N6058 2N6059
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL VCBO PARAMETER Collector-base voltage 2N6058 2N6059 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 2N6058 2N6059 Open collector Open base CONDITIONS Open emitter VALUE 80 100 80 100 5 12 20 0.2 150 200 -65~200 V A A mA W V UNIT V
VCEO VEBO IC ICM IB PD Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6058 2N6059
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6058 IC=0.1A ;IB=0 2N6059 IC=6A ;IB=24mA IC=12A ;IB=120mA IC=12A ;IB=120mA IC=6A ; VCE=3V 2N6058 ICEO Collector cut-off current 2N6059 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Trainsistion frequency VCE=50V; IB=0 VEB=5V; IC=0 IC=6A ; VCE=3V IC=12A ; VCE=3V IC=5A ;VCE=3V;f=1MHz 750 100 4 MHz 2.0 mA VCE=40V; IB=0 1.0 mA 100 2.0 3.0 4.0 2.8 V V V V CONDITIONS MIN 80 V TYP. MAX UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat VBE
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6058 2N6059
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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