SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSD2058
DESCRIPTION ·With TO-220F package ·Complement to type KSB1366 APPLICATIONS ·With general purpose applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX 60 60 7 3 0.5 1.5 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 60 MIN 60 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB
KSD2058
TYP.
MAX
UNIT V
1.5 3.0 10 1 300 3.0 35
V V µA mA
MHz pF
Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A IB1=-IB2=0.2A VCC=30V ,RL=15@ 0.65 1.3 0.65 µs µs µs
hFE Classifications O 60-120 Y 100-200 G 150-300
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
KSD2058
Fig.2 Outline dimensions
3
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