SMG2339P

SMG2339P Elektronische Bauelemente -3.6 A, -30 V, RDS(ON) 0.057  P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 1 SC-59 A 3 L 3 Top View 2 CB 1 2 FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Fast Switch. Low Gate Charge. Miniature SC-59 surface mount package saves board space. K E D F G H J REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -30 RDS(on) ( 0.057@VGS= -4.5V 0.089@VGS= -2.5V ID(A) -3.6 -2.8  Gate  Drain A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15  Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Continuous Source Current (Diode Conduction) A Power Dissipation A TA=25°C TA=70°C SYMBOL VDS VGS ID IDM IS RATING -30 ±12 ±3.6 ±2.9 ±10 0.4 1.25 0.8 -55 ~ 150 100 150 UNIT V V A A A W °C °C/W TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦5 sec Maximum Junction to Ambient A RθJA Steady-State Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Jul-2010 Rev. A Page 1 of 2 SMG2339P Elektronische Bauelemente -3.6 A, -30 V, RDS(ON) 0.057  P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Drain-Source On-Resistance A Forward Transconductance A Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD -0.80 -2 2 -0.70 ±100 -1 -10 57 89 V nA μA A mΩ S V VDS = VGS, ID = -250μA VDS = 0V, VGS= ±12V VDS = -24V, VGS= 0V VDS = -24V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -4.5V VGS= -4.5V, ID = -3.6A VGS= -2.5V, ID = -2.8A VDS= -5V,,ID = -3.6A IS= -0.4A, VGS= 0V TEST CONDITIONS Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 25 2.4 3.9 7.6 6.8 33.6 23.2 nS nC ID= -3.6A VDS= -10V VGS= -5V VDS= -15V ID= -1A VGEN= -10V RG= 50Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Jul-2010 Rev. A Page 2 of 2