2N6300 2N6301
MECHANICAL DATA Dimensions in mm (inches)
DARLINGTON SILICON POWER TRANSISTORS
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 4.08(0.161) rad.
14.48 (0.570) 14.99 (0.590)
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
2
0.71 (0.028) 0.86 (0.034)
Designed for general purpose amplifier and low frequency switching applications.
FEATURES
• High DC Current Gain
4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750)
• Monolithic Construction with Built-in Base–Emitter Shunt Resistors
TO–66 (TO-213AA)
Pin 1 –Base Pin 2 –Emitter Case – Collector
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300
VCEO VCBO VEBO IC IB PD TSTG , TJ TθJC Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current 60V 60V Continuous Peak 5V 8A 16A 120mA
2N6301
80V 80V
Base Current Total Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance – Junction - Case
100W 75W 0.571W/°C 0.428W/°C –65 to +200°C 1.75°C/W 2.33°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3979 Issue 1
2N6300 2N6301
ELECTRICAL CHARACTERISTICS 2N6300
Parameter
OFF CHARACTERISTICS VCEO(sus) ICEO ICEX IEBO Collector – Emitter Sustaining Voltage 1 Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current ON CHARACTERISTICS 1 hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Base – Emitter On Voltage DYNAMIC CHARACTERISTICS Cob Output Capacitance Magnitude of Common Emitter hfe Small Signal Short Circuit Current Transfer Ratio hfe Small Signal Current Gain VCB = 10V f = 0.1MHz VCE = 3V IC = 3A f = 1MHz VCE = 3V f = 1kHz VCE = 3V VCE = 3V IC = 4A IC = 8A IC = 8A VCE = 3V IC = 100mA VCE = 30V
(Tcase = 25°C unless otherwise stated)
Test Conditions
Min.
Typ.
Max.
Unit
IB = 0 IB = 0 TC = 150°C
60 0.5 0.5 5.0 2.0 750 100 2.0 3.0 4.0 2.8 18000
V mA mA mA
VCE = Rated VCB VBE(off) = 1.5V VBE = 5V IC = 0 IC = 4A IC = 8A IB = 16mA IB = 80mA IB = 80mA IC = 4A IE = 0
— V V V
200
pF
4.0 IC = 3A
—
300
—
Notes
1 Pulse test: tp = 300µs , Duty Cycle = 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3979 Issue 1
2N6300 2N6301
ELECTRICAL CHARACTERISTICS 2N6301
Parameter
OFF CHARACTERISTICS VCEO(sus) ICEO ICEX IEBO Collector – Emitter Sustaining Voltage 1 Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current ON CHARACTERISTICS 1 hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Base – Emitter On Voltage DYNAMIC CHARACTERISTICS Cob Output Capacitance Magnitude of Common Emitter hfe Small Signal Short Circuit Current Transfer Ratio hfe Small Signal Current Gain VCB = 10V f = 0.1MHz VCE = 3V IC = 3A f = 1MHz VCE = 3V f = 1kHz VCE = 3V VCE = 3V IC = 4A IC = 8A IC = 8A VCE = 3V IC = 100mA VCE = 40V
(Tcase = 25°C unless otherwise stated)
Test Conditions
Min.
Typ.
Max.
Unit
IB = 0 IB = 0 TC = 150°C
80 0.5 0.5 5.0 2 750 100 2.0 3.0 4.0 2.8 18000
V mA mA mA
VCE = Rated VCB VBE(off) = 1.5V VBE = 5V IC = 0 IC = 4A IC = 8A IB = 16mA IB = 80mA IB = 80mA IC = 4A IE = 0
— V V V
200
pF
4.0 IC = 3A
—
300
—
Notes
1 Pulse test: tp = 300µs , Duty Cycle = 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3979 Issue 1
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