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LH28F008SCT-L85

LH28F008SCT-L85

  • 厂商:

    SHARP(夏普)

  • 封装:

    TFSOP40

  • 描述:

    IC FLASH 8MBIT PARALLEL 40TSOP

  • 数据手册
  • 价格&库存
LH28F008SCT-L85 数据手册
PRODUCT SPECIFICATIONS ® Integrated Circuits Group LH28F008SCT-L85 Flash Memory 8M (1MB × 8) (Model No.: LHF08CH1) Spec No.: EL104027C Issue Date: April 24, 2000 sharp LHF08CH1 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. ●When using the products covered herein, please observe the conditions written herein and the precautions outlined in the following paragraphs. In no event shall the company be liable for any damages resulting from failure to strictly adhere to these conditions and precautions. (1) The products covered herein are designed and manufactured for the following application areas. When using the products covered herein for the equipment listed in Paragraph (2), even for the following application areas, be sure to observe the precautions given in Paragraph (2). Never use the products for the equipment listed in Paragraph (3). •Office electronics •Instrumentation and measuring equipment •Machine tools •Audiovisual equipment •Home appliance •Communication equipment other than for trunk lines (2) Those contemplating using the products covered herein for the following equipment which demands high reliability, should first contact a sales representative of the company and then accept responsibility for incorporating into the design fail-safe operation, redundancy, and other appropriate measures for ensuring reliability and safety of the equipment and the overall system. •Control and safety devices for airplanes, trains, automobiles, and other transportation equipment •Mainframe computers •Traffic control systems •Gas leak detectors and automatic cutoff devices •Rescue and security equipment •Other safety devices and safety equipment,etc. (3) Do not use the products covered herein for the following equipment which demands extremely high performance in terms of functionality, reliability, or accuracy. •Aerospace equipment •Communications equipment for trunk lines •Control equipment for the nuclear power industry •Medical equipment related to life support, etc. (4) Please direct all queries and comments regarding the interpretation of the above three Paragraphs to a sales representative of the company. ●Please direct all queries regarding the products covered herein to a sales representative of the company. Rev. 1.3 sharp LHF08CH1 1 CONTENTS PAGE PAGE 1.0 INTRODUCTION ................................................... 3 5.0 DESIGN CONSIDERATIONS ..............................23 1.1 New Features...................................................... 3 5.1 Three-Line Output Control .................................23 1.2 Product Overview ................................................ 3 5.2 RY/BY# and Block Erase, Byte Write and Lock-Bit 2.0 PRINCIPLES OF OPERATION ............................. 7 5.3 Power Supply Decoupling ..................................23 2.1 Data Protection ................................................... 7 5.4 VPP Trace on Printed Circuit Boards ..................23 3.0 BUS OPERATION................................................. 8 5.6 Power-Up/Down Protection................................24 3.1 Read ................................................................... 8 5.7 Power Dissipation ..............................................24 Configuration Polling...........................................23 5.5 VCC, VPP, RP# Transitions.................................24 3.2 Output Disable .................................................... 8 3.3 Standby ............................................................... 8 6.0 ELECTRICAL SPECIFICATIONS........................25 3.4 Deep Power-Down .............................................. 8 6.1 Absolute Maximum Ratings ...............................25 3.5 Read Identifier Codes Operation ......................... 9 6.2 Operating Conditions .........................................25 3.6 Write.................................................................... 9 6.2.1 Capacitance .................................................25 6.2.2 AC Input/Output Test Conditions ..................26 4.0 COMMAND DEFINITIONS .................................... 9 6.2.3 DC Characteristics........................................27 4.1 Read Array Command....................................... 12 6.2.4 AC Characteristics - Read-Only Operations .29 4.2 Read Identifier Codes Command ...................... 12 6.2.5 AC Characteristics - Write Operations..........32 4.3 Read Status Register Command....................... 12 6.2.6 Alternative CE#-Controlled Writes ................35 4.4 Clear Status Register Command....................... 12 6.2.7 Reset Operations .........................................38 4.5 Block Erase Command...................................... 12 6.2.8 Block Erase, Byte Write and Lock-Bit 4.6 Byte Write Command ........................................ 13 Configuration Performance...........................39 4.7 Block Erase Suspend Command....................... 13 4.8 Byte Write Suspend Command ......................... 14 7.0 ADDITIONAL INFORMATION .............................40 4.9 Set Block and Master Lock-Bit Commands ....... 14 7.1 Ordering Information ..........................................40 4.10 Clear Block Lock-Bits Command..................... 15 8.0 PACKAGE AND PACKING SPECIFICATIONS ..41 Rev. 1.3 sharp LHF08CH1 2 LH28F008SCT-L85 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology 2.7V(Read-Only), 3.3V or 5V VCC 3.3V, 5V or 12V VPP ■ Automated Byte Write and Block Erase Command User Interface Status Register ■ High-Performance Read Access Time 85ns(5V±0.25V), 90ns(5V±0.5V), 120ns(3.3V±0.3V), 150ns(2.7V-3.6V) ■ Enhanced Automated Suspend Options Byte Write Suspend to Read Block Erase Suspend to Byte Write Block Erase Suspend to Read ■ Operating Temperature 0°C to +70°C ■ High-Density Symmetrically-Blocked Architecture Sixteen 64K-byte Erasable Blocks ■ Extended Cycling Capability 100,000 Block Erase Cycles 1.6 Million Block Erase Cycles/Chip ■ SRAM-Compatible Write Interface ■ Low Power Management Deep Power-Down Mode Automatic Power Savings Mode Decreases ICC in Static Mode ■ Industry-Standard Packaging 40-Lead TSOP ■ Enhanced Data Protection Features Absolute Protection with VPP=GND Flexible Block Locking Block Erase/Byte Write Lockout during Power Transitions ■ CMOS Process (P-type silicon substrate) ■ ETOXTM* Nonvolatile Flash Technology ■ Not designed or rated as radiation hardened SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage and extended cycling provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F008SCT-L85 offers three levels of protection: absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs. The LH28F008SCT-L85 is manufactured on SHARP’s 0.38µm ETOXTM process technology. It come in industry-standard package: the 40-lead TSOP, ideal for board constrained applications. Based on the 28F008SA architecture, the LH28F008SCT-L85 enables quick and easy upgrades for designs demanding the state-of-the-art. *ETOX is a trademark of Intel Corporation. Rev. 1.3 sharp LHF08CH1 1 INTRODUCTION This datasheet contains LH28F008SCT-L85 specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications. LH28F008SCT-L85 Flash memory documentation also includes application notes and design tools which are referenced in Section 7. 1.1 New Features The LH28F008SCT-L85 SmartVoltage Flash memory maintains backwards-compatibility with SHARP’s 28F008SA. Key enhancements over the 28F008SA include: •SmartVoltage Technology •Enhanced Suspend Capabilities •In-System Block Locking Both devices share a compatible pinout, status register, and software command set. These similarities enable a clean upgrade from the 28F008SA to LH28F008SCT-L85. When upgrading, it is important to note the following differences: •Because of new feature support, the two devices have different device codes. This allows for software optimization. •VPPLK has been lowered from 6.5V to 1.5V to support 3.3V and 5V block erase, byte write, and lock-bit configuration operations. The VPP voltage transitions to GND is recommended for designs that switch VPP off during read operation. •To take advantage of SmartVoltage technology, allow VPP connection to 3.3V or 5V. 1.2 Product Overview The LH28F008SCT-L85 is a high-performance 8M-bit SmartVoltage Flash memory organized as 1M-byte of 8 bits. The 1M-byte of data is arranged in sixteen 64K-byte blocks which are individually erasable, lockable, and unlockable in-system. The memory map is shown in Figure 3. 3 SmartVoltage technology provides a choice of VCC and VPP combinations, as shown in Table 1, to meet system performance and power expectations. 2.7V VCC consumes approximately one-fifth the power of 5V VCC. But, 5V VCC provides the highest read performance. VPP at 3.3V and 5V eliminates the need for a separate 12V converter, while VPP=12V maximizes block erase and byte write performance. In addition to flexible erase and program voltages, the dedicated VPP pin gives complete data protection when VPP≤VPPLK. Table 1. VCC and VPP Voltage Combinations Offered by SmartVoltage Technology VCC Voltage VPP Voltage 2.7V(1)  3.3V 3.3V, 5V, 12V 5V 5V, 12V NOTE: 1. Block erase, byte write and lock-bit configuration operations with VCC
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