BBY51-02W

BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 2 1 VES05991 Type BBY 51-02W Marking I Ordering Code Q62702-B0858 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 7 20 -55 ...+150 -55 ...+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-23-1998 1998-11-01 BBY 51-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 100 Unit IR IR - nA VR = 6 V Reverse current VR = 6 V, TA = 65 °C AC characteristics Diode capacitance CT 4.5 3.4 2.7 2.5 5.3 4.2 3.5 3.1 1.75 1.78 0.5 0.37 0.09 0.6 6.1 5.2 4.6 3.7 2.2 2.2 0.7 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T4 C1V-C 3V C3V-C 4V rs CC Ls 1.55 1.4 0.3 - pF VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-23-1998 1998-11-01 BBY 51-02W Diode capacitance CT = f (V R) f = 1MHz EHD07128 Temperature coefficient TCc = f (V R), per diode, f = 1MHz 10 CT pF 8 10 4 ppa TCC C EHD07129 10 3 6 4 10 2 2 0 0 2 4 V VR 6 10 1 0 10 5 10 1 V VR 10 2 Semiconductor Group Semiconductor Group 33 Jul-23-1998 1998-11-01