BFP420

SIEGET® 25 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metalization for high reliability • SIEGET ® 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line BFP 420 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 420 Marking Ordering Code AMs Q62702-F1591 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 107 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Symbol Value 4.5 15 1.5 35 3 160 150 -65 ...+150 -65 ...+150 mW °C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj TA T stg 1) Junction - soldering point RthJS ≤ 270 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Jul-14-1998 1998-11-01 BFP 420 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V typ. 5 80 max. 6.5 200 35 150 V nA µA - Unit V(BR)CEO I CBO I EBO hFE 4.5 50 AC characteristics Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω Third order intersept point IC = 20 mA, VCE = 2 V, ZS =ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt fT Ccb Cce Ceb F 20 - 25 0.15 0.41 0.55 1.05 0.24 1.4 GHz pF dB Gms - 20 - |S21|2 14 17 - dB IP3 - 22 - dBm P-1dB - 12 - 1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group 22 Jul-14-1998 1998-11-01 BFP 420 Common Emitter S-Parameters f GHz MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VCE = 2V, IC = 20mA 0.01 0.1 0.5 1 2 3 4 6 8 9 10 0.543 0.538 0.448 0.417 0.437 0.472 0.53 0.617 0.73 0.788 0.82 -2.5 -25.1 -99.3 -143.6 176.2 152.8 133.3 109.1 82.5 72.6 67 36.88 35.4 22.87 13.46 6.93 4.59 3.339 2.15 1.46 1.2 1 178.1 164.4 120.8 96.3 71.5 54.4 38.9 12.9 -16.8 -30.4 -39.5 0.0009 0.0075 0.0272 0.0398 0.062 0.09 0.115 0.156 0.172 0.174 0.172 95.8 79.3 58.7 55.2 53.5 48.6 40.5 25.3 5.4 -5 -11.3 0.96 0.946 0.633 0.399 0.227 0.134 0.109 0.136 0.229 0.319 0.405 -0.6 -12.3 -45.2 -60.3 -77.1 -96.7 -144.5 144.1 101.3 86.1 78.6 Common Emitter Noise Parameters f GHz Fmin 1) dB Ga 1) dB Γopt MAG ANG RN Ω rn - F50Ω 2) dB |S21|2 2) dB V CE = 2V, IC = 5mA 0.9 1.8 2.4 3 4 5 6 0.9 1.05 1.25 1.38 1.55 1.75 2.2 20.5 15.2 13 12.1 10.3 8.6 6.4 0.19 0.11 0.11 0.19 0.28 0.37 0.44 30 64 116 165 -155 -130 -117 8.7 7.5 7 6.5 7 10 15 0.17 0.15 0.14 0.13 0.14 0.2 0.3 1.02 1.11 1.32 1.48 1.83 2.2 3.3 20.3 15.8 13.5 11.6 9.1 7 5.3 1) Input matched for minimum noise figure, output for maximum gain 2) Z S = ZL = 50Ω For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Jul-14-1998 1998-11-01 BFP 420 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.20045 28.383 2.0518 19.705 1.1724 8.5757 1.8063 6.7661 1 0.81969 2.3249 0 3 aA V V Ω fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 72.534 0.48731 7.8287 0.69141 3.4849 0.31111 0.8051 0.42199 0 0.30232 0 0 0.73234 A A Ω V deg F - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.2432 19.049 1.3325 0.019237 0.72983 0.10105 0.46576 0.23794 234.53 0.3 0.75 1.11 300 pA A mA Ω V fF V eV K Ω C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 3.5 fA N= 1.02 - RS = 10 All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BI = L BO = L EI = C C’-E’Diode 0.47 0.53 0.23 0.05 0.56 0.58 136 6.9 134 nH nH nH nH nH nH fF fF fF L BO B L BI B’ Transistor Chip E’ C’ L CI L CO L EO = L CI = L CO = C BE = C CB = C CE = C BE L EI C CE L EO E EHA07389 Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) © 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Jul-14-1998 1998-11-01 BFP 420 For non-linear simulation: • Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. • If you need simulation of thereverse characteristics, add the diode with the C’-E’- diode data between collector and emitter. • Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: • This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: • Higher gain because of lower emitter inductance. • Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Jul-14-1998 1998-11-01 BFP 420 Total power dissipation P tot = f (T A*, TS) * Package mounted on epoxy Transition frequency fT = f (IC) f = 2 GHz VCE = parameter in V 200 mW 30 GHz 2 to 4 1.5 160 24 Ptot 140 fT TS 120 100 80 60 40 20 0 0 1 0.75 22 20 18 TA 16 14 12 10 8 6 4 2 0.5 20 40 60 80 100 120 °C 150 0 0 5 10 15 20 25 30 mA 40 TA,TS IC Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 1 K/W RthJS Pmax / PDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 66 Jul-14-1998 1998-11-01 BFP 420 Power gain G ma, G ms, |S 21|2 = f ( f ) VCE = 2V, I C = 20 mA 44 dB Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 30 dB 0.9 36 24 G 32 28 24 20 16 12 8 4 0 0.0 1.0 2.0 3.0 4.0 GHz G Gms 22 20 18 16 14 12 1.8 2.4 3 4 5 6 |S21 |2 Gma 10 8 6 4 2 6.0 0 0 4 8 12 16 20 24 28 32 mA 40 f IC Power gain G ma, G ms = f (V CE) I C = 20 mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz 0.30 f = parameter in GHz 30 dB 0.9 pF 24 G 22 20 18 16 14 12 10 8 6 1.8 2.4 3 Ccb 0.20 0.15 4 5 6 0.10 0.05 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 4.5 0.00 0 1 2 V 4 VCE VCB Semiconductor Group Semiconductor Group 77 Jul-14-1998 1998-11-01 BFP 420 Noise figure F = f (IC) Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt 4.0 dB VCE = 2 V, f = 1.8 GHz 3.0 dB 3.0 2.0 F 2.0 F 1.5 2.5 1.5 ZS = 50 Ohm ZS = ZSopt f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 4 8 12 16 20 24 28 32 mA 38 1.0 1.0 0.5 0.5 0.0 0 0.0 0 4 8 12 16 20 24 28 mA 36 IC IC Noise figure F = f ( f ) Source impedance for min. Noise Figure versus Frequency VCE = 2 V, ZS = Z Sopt 3.0 VCE = 2 V, I C = 5 mA / 20 mA +j50 dB +j25 +j100 +j10 2.0 2.4GHz F 1.8GHz 0.9GHz 3GHz 1.5 0 10 25 4GHz 50 100 0.45GHz 1.0 5GHz IC = 20 mA IC = 5 mA 0.5 -j10 6GHz -j25 -j50 -j100 0.0 0.0 1.0 2.0 3.0 4.0 GHz 6.0 f Semiconductor Group Semiconductor Group 88 Jul-14-1998 1998-11-01