BFP420H6327

BFP420 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP420 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz, high gain and low current characteristics make the device suitable for oscillators up to 10 GHz. It remains cost competitive without compromising on ease of use. Feature list • • • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Radio-frequency oscillators Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for sub-1 GHz ISM band applications Device information Product name / Ordering code Package Pin configuration BFP420 / BFP420H6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel AMs 3000 BFP420 / BFP420H6433XTMA1 10000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Datasheet 2 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 1 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.5 4.1 TA = -55 °C, open base Collector emitter voltage VCES 15 E-B short circuited Collector base voltage VCBO 15 Open emitter Emitter base voltage VEBO 1.5 Open collector Base current IB 9 Collector current IC 60 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 210 mW TS ≤ 98 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 2 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 250 – Unit Note or test condition K/W – 260 240 220 200 180 Ptot[mW] 160 140 120 100 80 60 40 20 0 Figure 1 Datasheet 0 25 50 75 TS[°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Thermal characteristics RthJS 10 3 K/W 10 2 10 110 -7 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Figure 2 Permissible pulse load RthJS = f(tp) Ptotmax/PtotDC 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 10 010 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Figure 3 Datasheet Permissible pulse load Ptot,max / Ptot,DC = f(tp) 5 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 3 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Collector emitter breakdown voltage V(BR)CEO 4.5 5 – V IC = 1 mA, IB = 0, open base Collector emitter leakage current ICES – – 10 2) μA VCE = 15 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 100 2) nA VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 3 2) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 60 3.2 General AC characteristics Table 4 General AC characteristics at TA = 25 °C Parameter Symbol 95 μA 130 Values Min. Typ. Max. VCE = 4 V, IC = 20 mA, pulse measured Unit Note or test condition Transition frequency fT 18 25 – GHz VCE = 3 V, IC = 30 mA, f = 2 GHz Collector base capacitance CCB – 0.15 0.3 pF VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.37 – Emitter base capacitance CEB 0.55 2 VCE = 2 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 6 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT C E VB B Bias-T E (Pin 1) IN Figure 4 Testing circuit Table 5 AC characteristics, VCE = 2 V, f = 1.8 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure Gms |S21|2 NFmin – 14 – Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Note: Datasheet Typ. 21 17 Unit Max. – dB 1.1 22 12 Note or test condition IC = 20 mA IC = 5 mA dBm IC = 20 mA, ZS = ZL = 50 Ω Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. 7 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 65 I B= 725µA I B= 675µA I = 625µA B I = 575µA B I B= 525µA I B= 475µA I B= 425µA I B= 375µA I B= 325µA I B= 275µA I = 225µA 60 55 50 45 IC[mA] 40 35 30 25 B 20 I B= 175µA 15 I B= 125µA 10 I B= 75µA 5 0 Figure 5 I B= 25µA 0 1 2 3 VCE[V] 4 5 6 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 2 hFE 10 1 10 −1 10 0 1 10 10 2 10 IC[mA] Figure 6 DC current gain hFE = f(IC), VCE = 3 V Datasheet 8 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 2 10 1 10 0 10 IC[mA] −1 10 −2 10 −3 10 −4 10 −5 10 0.5 0.6 0.7 0.8 0.9 1 VBE[V] Figure 7 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 3 V 0 10 −1 10 −2 10 IB[mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.6 0.7 0.8 0.9 1 VBE[V] Figure 8 Datasheet Base current vs. base emitter forward voltage IB = f(VBE), VCE = 3 V 9 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics −6 10 −7 10 −8 IB[A] 10 −9 10 −10 10 −11 10 Figure 9 0.3 0.5 0.7 0.9 VEB[V] 1.1 1.3 1.5 Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 3 V 8 C 7.5 B VCER [V] 7 RBE E 6.5 6 5.5 5 4 10 5 6 10 10 7 10 RBE [ Ω] Figure 10 Datasheet Collector emitter breakdown voltage VCER = f(RBE), IC = 1 mA 10 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 30 GHz 2 to 4 1.5 24 fT 1 20 0.75 16 12 0.5 8 4 00 5 10 15 20 25 30 mA 40 IC Figure 11 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter 0.3 Ccb pF 0.2 0.15 0.1 0.05 00 1 2 V 4 VCB Figure 12 Datasheet Collector base capacitance CCB = f(VCB), f = 1 MHz 11 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 44 40 36 32 G ms G [dB] 28 24 20 G ma 16 |S |2 21 12 8 4 0 0 1 2 3 4 5 6 f [GHz] Figure 13 Gain Gma, Gms, IS21I2 = f(f), VCE = 2 V, IC = 20 mA 30 dB 0.9 24 1.8 20 G 2.4 16 3 12 4 5 6 8 4 00 4 8 12 16 20 24 28 32 mA 40 IC Figure 14 Datasheet Maximum power gain Gmax = f(IC), VCE = 2 V, f = parameter in GHz 12 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 30 dB 0.9 G 24 1.8 20 2.4 16 3 4 12 5 6 8 4 00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 4.5 VCE Figure 15 Maximum power gain Gmax = f(VCE), IC = 20 mA, f = parameter in GHz +j50 +j25 +j100 +j10 2.4GHz 1.8GHz 0.9GHz 3GHz 0 10 25 50 4GHz 5GHz 100 0.45GHz 5 mA 20 mA -j10 6GHz -j25 -j100 -j50 Figure 16 Datasheet Source impedance for minimum noise figure ZS,opt = f(f), VCE = 2 V, IC = 5 / 20 mA 13 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3 dB F 2 1.5 1 IC = 20 mA IC = 5 mA 0.5 0 0 1 2 3 GHz 4 6 f Figure 17 Noise figure NFmin = f(f), VCE = 2 V, ZS = ZS,opt, IC = 5 / 20 mA 4.0 dB F 3.0 2.0 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 1.0 00 4 8 12 16 20 24 28 32 mA 38 IC Figure 18 Datasheet Noise figure NFmin = f(IC), VCE = 2 V, ZS = ZS,opt, f = parameter in GHz 14 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3.0 F dB 2.0 1.5 ZS = 50 Ohm ZS = ZSopt 1.0 0.5 00 4 8 12 16 20 24 28 32 mA 36 IC Figure 19 Note: Datasheet Noise figure NFmin = f(IC), ZS = ZS,opt, NF50 = f(IC), ZS = 50 Ω, VCE = 2 V, f = 1.8 GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 15 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 20 Package outline Figure 21 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 22 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 23 Datasheet 1.1 ] Tape dimensions 16 Revision 2.0 2019-01-25 BFP420 Surface mount wideband silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout, typical DC curves added. Datasheet 17 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ikw1524056005786 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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