BUP306D

BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 306D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67040-A4222-A2 1200V 23A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 23 15 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 46 30 TC = 25 °C TC = 90 °C Diode forward current IF 18 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 108 TC = 25 °C Power dissipation Ptot 165 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Jul-30-1996 BUP 306D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 0.63 1.25 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 6.5 3.3 4.3 V VGE = VCE, IC = 0.7 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C Zero gate voltage collector current ICES 0.4 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 3.5 5.5 1300 100 50 - S pF 1750 150 75 VCE = 20 V, IC = 10 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-30-1996 BUP 306D Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit td(on) 40 60 ns VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 47 Ω Rise time tr 30 50 VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 47 Ω Turn-off delay time td(off) 200 300 VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Ω Fall time tf 20 30 mWs 1.3 - VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Ω Total turn-off loss energy Eoff VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Ω Free-Wheel Diode Diode forward voltage VF 2.4 1.9 2.9 - V IF = 15 A, VGE = 0 V, Tj = 25 °C IF = 15 A, VGE = 0 V, Tj = 125 °C Reverse recovery time trr ns IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C Reverse recovery charge 100 150 µC 1 3 1.8 5.4 Qrr IF = 15 A, VR = 0 V, diF/dt = -800 A/µs IF = 15 A, VGE = 0 V, Tj = 25 °C VR = 0 V, diF/dt = -800 A/µs, Tj = 125 °C Semiconductor Group 3 Jul-30-1996 BUP 306D Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 170 W Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 24 A 20 Ptot 140 IC 18 16 120 100 14 12 10 80 60 40 8 6 4 20 2 0 0 20 40 60 80 100 120 °C 160 0 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 tp = 13.0µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT A K/W IC 10 1 100 µs ZthJC 10 - 1 D = 0.50 0.20 10 0 1 ms 10 - 2 0.10 0.05 10 ms single pulse 0.02 0.01 10 -1 0 10 DC 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Jul-30-1996 BUP 306D Typ. output characteristics Typ. transfer characteristics IC = f(VCE) parameter: tp = 80 µs, Tj = 125 °C IC = f (VGE) parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) parameter: Tj = 25 °C VCE(sat) = f (VGE) parameter: Tj = 125 °C Semiconductor Group 5 Jul-30-1996 BUP 306D Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 10 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 400 V 14 12 10 8 6 4 2 0 0 800 V 20 40 60 80 100 nC 130 QGate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 ICsc/IC(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 0.0 0 200 400 600 800 1000 1200 V 1600 Semiconductor Group 6 Jul-30-1996 BUP 306D Typ. switching time t = f (RG), inductive load, Tj = 125 °C parameter: VCE = 600 V, VGE = ± 15 V, IC = 10 A Typ. forward characteristics IF = f (VF) parameter: Tj 30 A 26 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 Diode K/W IF 24 22 20 18 16 14 12 10 8 6 4 2 0 0.0 ZthJC 10 0 Tj=125°C Tj=25°C 10 - 1 D = 0.50 0.20 0.10 10 - 2 0.05 0.02 0.01 single pulse 10 -3 -5 10 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 7 Jul-30-1996 BUP 306D Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Jul-30-1996