BUZ 11 S2
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 11 S2
VDS
60 V
ID
30 A
RDS(on)
0.04 Ω
Package TO-220 AB
Ordering Code C67078-S1301-A5
Maximum Ratings Parameter Continuous drain current Symbol Values 30 Unit A
ID IDpuls
120
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
30 1.9 mJ
ID = 30 A, VDD = 25 V, RGS = 25 Ω L = 15.6 µH, Tj = 25 °C
Gate source voltage Power dissipation 14
VGS Ptot
± 20 75
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 1.67 ≤ 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
07/96
BUZ 11 S2
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 3 0.1 10 10 0.03 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.04
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 19 A
Semiconductor Group
2
07/96
BUZ 11 S2
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
10 17 1000 450 165 -
S pF 1350 680 250 ns 15 25
VDS≥ 2 * ID * RDS(on)max, ID = 19 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Rise time
tr
55 85
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Turn-off delay time
td(off)
120 160
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Fall time
tf
80 110
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 11 S2
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1.6 80 0.1 30 120 V 1.8 ns µC Values typ. max. Unit
TC = 25 °C
Inverse diode direct current,pulsed
ISM
-
TC = 25 °C
Inverse diode forward voltage
VSD trr Qrr
VGS = 0 V, IF = 60 A
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 11 S2
Not for new design
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
32
80
W
A
Ptot
ID
60
24
50
20
40
16
30
12
20
8
10 0 0 20 40 60 80 100 120 °C 160
4 0 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 3
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
K/W A
ID
10 2
ZthJC
/
I
DS (o n)
=
V
DS
t = 45.0ns p 100 ns 1 µs 10 µs
10 0
D
100 µs
R
10 -1
1 ms
D = 0.50 0.20
10
1
0.10
10 ms
10 -2
0.05 0.02 0.01 single pulse
10
0
10
0
10
1
DC V 10
2
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 11 S2
Not for new design
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
70 A 60
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
0.13
Ptot = 75W
l k j i h
VGS [V]
Ω
0.11
a
b
c
d
e
f
ID
55 50 45 40 35 30 25 20 15 10 5 0
g
a b c
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
RDS (on) 0.10
0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00
VGS [V] =
a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0
fd
e
e
f g h
di
j k
g h i k j
c
l
b a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0
10
20
30
40
A
60
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
65 A 55
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
26 S 22
ID
50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V 10
gfs
20 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 A ID 60
VGS
Semiconductor Group
6
07/96
BUZ 11 S2
Not for new design
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 19 A, VGS = 10 V
0.13
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
0.11
98%
RDS (on) 0.10
0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60 -20 20 60 100 °C 160
VGS(th)
3.6 3.2 2.8 2.4
typ
2%
98% typ
2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 3
nF C 10 0
A
IF Ciss Coss
10 2
10 -1
Crss
10 1
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 -2 0 10 0 0.0
5
10
15
20
25
30
V VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
07/96
BUZ 11 S2
Not for new design
Avalanche energy EAS = ƒ(Tj ) parameter: ID = 30 A, VDD = 25 V RGS = 25 Ω, L = 15.6 µH
15 mJ V
Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 56 A
16
EAS
12 11 10 9 8 7 6 5 4 3 2 1 0 20 40 60 80 100 120 °C 160
VGS
12 0,2 VDS max 0,8 VDS max
10
8
6
4
2 0 0 5 10 15 20 25 30 35 40 nC 50
Tj
Q Gate
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )
71 V 68 66 64
V(BR)DSS
62 60
58 56 54 -60
-20
20
60
100
°C
160
Tj
Semiconductor Group
8
07/96
BUZ 11 S2
Not for new design
Package Outlines TO-220 AB Dimension in mm
Semiconductor Group
9
07/96