Q62702-S633

BSS 92 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSS 92 Type BSS 92 BSS 92 BSS 92 Pin 2 D Marking SS92 Pin 3 S VDS -240 V ID -0.15 A RDS(on) 20 Ω Package TO-92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -240 -240 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Continuous drain current VGS ID ± 20 A -0.15 TA = 33 °C DC drain current, pulsed IDpuls -0.6 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 92 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS -240 -1.5 -0.1 -10 -10 10 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 -0.2 µA VDS = -240 V, VGS = 0 V, Tj = 25 °C VDS = -240 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -100 nA Ω 20 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -0.15 A Semiconductor Group 2 12/05/1997 BSS 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.06 0.12 95 20 10 - S pF 130 30 15 ns 8 12 VDS≥ 2 * ID * RDS(on)max, ID = -15 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.25 A RG = 50 Ω Rise time tr 25 40 VDD = -30 V, VGS = -10 V, ID = -0.25 A RG = 50 Ω Turn-off delay time td(off) 25 33 VDD = -30 V, VGS = -10 V, ID = -0.25 A RG = 50 Ω Fall time tf 42 55 VDD = -30 V, VGS = -10 V, ID = -0.25 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A -0.85 -0.15 -0.6 V -1.2 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = -0.3 A Semiconductor Group 4 12/05/1997 BSS 92 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V -0.16 1.2 W A 1.0 Ptot 0.9 0.8 ID -0.12 -0.10 0.7 0.6 0.5 -0.06 0.4 0.3 0.2 -0.02 0.1 0.0 0 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 °C 160 -0.04 -0.08 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -285 V -275 V(BR)DSS -270 -265 -260 -255 -250 -245 -240 -235 -230 -225 -220 -215 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 92 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C -0.34 A -0.28 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 65 Ptot = 1W lk ji h g VGS [V] a -2.0 b -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 Ω 55 a b c d e f ID RDS (on) 50 45 40 35 30 25 20 15 10 VGS [V] = a b c d e f -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 g h i j -5.0 -6.0 -7.0 -8.0 k l -9.0 -10.0 -0.24 f c d -0.20 e e f g h i -0.16 d -0.12 j k -0.08 l g i k jl h c -0.04 0.00 0 a b 5 -8 V -10 0 0.00 -1 -2 -3 -4 -5 -6 -7 -0.04 -0.08 -0.12 -0.16 -0.20 A -0.26 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max -0.40 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.20 S A ID -0.30 gfs 0.16 0.14 -0.25 0.12 0.10 0.08 0.06 -0.20 -0.15 -0.10 0.04 -0.05 0.00 0 0.02 0.00 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -1 -2 -3 -4 -5 -6 -7 -8 V -10 VGS A ID -0.40 Semiconductor Group 6 12/05/1997 BSS 92 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = -0.15 A, VGS = -10 V 50 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 Ω RDS (on) 40 35 30 25 20 15 10 5 0 -60 VGS(th) -3.6 -3.2 -2.8 98% -2.4 98% -2.0 -1.6 typ typ -1.2 2% -0.8 -0.4 -20 20 60 100 °C 160 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs -10 0 pF C 10 2 A IF -10 -1 Ciss Coss 10 1 Crss -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 12/05/1997