BSS 125
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V
Pin 1 G Type BSS 125 Type BSS 125 BSS 125 BSS 125
Pin 2 D Marking SS125
Pin 3 S
VDS
600 V
ID
0.1 A
RDS(on)
45 Ω
Package TO-92
Ordering Code Q62702-S021 Q67000-S008 Q67000-S233
Tape and Reel Information E6288 E6296 E6325
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 600 600 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.1
TA = 35 °C
DC drain current, pulsed
IDpuls
0.4
TA = 25 °C
Power dissipation
Ptot
1
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 125
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
600 2 10 8 10 30 2.5 100 50 100
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.5
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
nA µA nA Ω 45
VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.1 A
Semiconductor Group
2
12/05/1997
BSS 125
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.06 0.17 95 9 4 -
S pF 130 14 6 ns 5 8
VDS≥ 2 * ID * RDS(on)max, ID = 0.1 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Ω
Rise time
tr
10 15
VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Ω
Turn-off delay time
td(off)
16 21
VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Ω
Fall time
tf
15 20
VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Ω
Semiconductor Group
3
12/05/1997
BSS 125
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.8 0.1 0.4 V 1.3 Values typ. max. Unit
TA = 25 °C
Inverse diode direct current,pulsed
ISM
-
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 0.2 A
Semiconductor Group
4
12/05/1997
BSS 125
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V
0.11 A
1.2 W 1.0
Ptot
0.9 0.8
ID
0.09 0.08 0.07
0.7 0.06 0.6 0.05 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 °C 160 0.04 0.03 0.02 0.01 0.00 0 20 40 60 80 100 120 °C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
710 V 680 V(BR)DSS 660 640
620
600
580
560 540 -60
-20
20
60
100
°C
160
Tj
Semiconductor Group
5
12/05/1997
BSS 125
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
0.24 A 0.20
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
140
Ptot = 1W
k h lj i g e f d
VGS [V] a 2.5
b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0
Ω
120
a
b
ID
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 4 8 12 16
a b c
RDS (on) 110
100 90 80 70 60 50 40 30 20 VGS [V] = 10 2.5 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 3.0 0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18
a b c d e f g h i j k
d e f g h i j k l
c d e g fh k ji
V
24
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max
0.22 A
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
0.25
ID
0.18 0.16 0.14 0.12 0.10
gfs
S
0.15
0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 V 10 0.00 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 A 0.20 0.05
VGS
ID
Semiconductor Group
6
12/05/1997
BSS 125
Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.1 A, VGS = 10 V
110
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
RDS (on)
90 80
VGS(th)
3.6 3.2
70 2.8 60 50 40 30 20 10 0 -60 -20 20 60 100 °C 160
98% typ
98%
2.4 2.0
typ
1.6 1.2 0.8 0.4 0.0 -60 -20 20
2%
60
100
°C
160
Tj
Tj
Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs
10 0
pF C 10 2
A
IF Ciss
10 - 1
10 1
10 - 2
Coss Crss
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 0 0
5
10
15
20
25
30
V VDS
40
10 -3 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
12/05/1997
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