Q67000-S94

BSP 317 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSP 317 Type BSP 317 Pin 2 D Pin 3 S Pin 4 D VDS -200 V ID -0.37 A RDS(on) 6Ω Package SOT-223 Marking Ordering Code Q67000-S94 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -200 -200 Unit V VDS VDGR VGS ID RGS = 20 kΩ Gate source voltage Continuous drain current ± 20 A -0.37 TA = 25 °C DC drain current, pulsed IDpuls -1.48 TA = 25 °C Power dissipation Ptot 1.8 W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 317 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -200 -1.1 -0.1 -10 -10 3.4 -2 -1 -100 -100 -100 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS µA nA nA Ω 6 VDS = -200 V, VGS = 0 V, Tj = 25 °C VDS = -200 V, VGS = 0 V, Tj = 125 °C VDS = -130 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -10 V, ID = -0.37 A Semiconductor Group 2 Sep-12-1996 BSP 317 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.25 0.35 270 50 15 - S pF 360 75 25 ns 8 12 VDS≥ 2 * ID * RDS(on)max, ID = -0.37 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω Rise time tr 30 45 VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω Turn-off delay time td(off) 80 110 VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω Fall time tf 90 120 VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 317 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A -0.95 -0.37 -1.48 V -1.1 Values typ. max. Unit ISM VSD TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = -0.74 A, Tj = 25 °C Semiconductor Group 4 Sep-12-1996 BSP 317 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V -0.38 A -0.32 2.0 W Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 ID -0.28 -0.24 -0.20 -0.16 -0.12 -0.08 -0.04 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 317 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -0.9 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 19 Ptot = 2W k ji lgf h e Ω VGS [V] a -2.0 b c -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 a b c d 16 ID -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0 -1 -2 -3 -4 -5 -6 -7 RDS (on) 14 12 10 8 6 4 2 0 VGS [V] = a b c d e f -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 g h i j -5.0 -6.0 -7.0 -8.0 k l -9.0 -10.0 d e df g c h i j k e f g kj l ih bl a V -9 0.00 -0.10 -0.20 -0.30 -0.40 A -0.60 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, -1.8 A 0.65 S 0.55 ID -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 gfs 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.00 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VGS A ID -1.6 Semiconductor Group 6 Sep-12-1996 BSP 317 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.37 A, VGS = -10 V 18 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 Ω RDS (on) 14 12 10 VGS(th) -3.6 -3.2 -2.8 -2.4 8 6 98% 98% -2.0 -1.6 typ 4 -1.2 -0.8 typ 2% 2 0 -60 -20 20 60 100 °C 160 -0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs -10 1 pF C 10 2 A Ciss IF -10 0 Coss 10 1 Crss -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -10 -2 0.0 -5 -10 -15 -20 -25 -30 V VDS -40 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 317 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C -240 V -230 V(BR)DSS -225 -220 -215 -210 -205 -200 -195 -190 -185 -180 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 317 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996