SFT6800S.5_1

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6800S.5 2 A /500 Volts NPN switching Transistor Features: • Switching Transistor • Small Footprint Surface Mount Device with Excellent Thermal Properties • TX, TXV, S-Level Screening Available • PNP Complimentary Parts Available (SFT1192 Series) DESIGNER’S DATA SHEET SMD.5 Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Power Dissipation @ TC = 25ºC Power Dissipation @ TA = 25ºC Operating & Storage Temperature Maximum Thermal Resistance Junction to Case and to Ambient Note1: Derated 333 mW/°C above TC= 105°C Note2: Derated 13.33 mW/°C above TA= 75°C note 1 note 2 Symbol VCEO VCBO VEBO IC PD Top & Tstg RθJC RθJA Value 400 500 10 2 15 1 -65 to +200 3 (typ 2) 75 Units Volts Volts Volts Amps W ºC ºC/W PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0088B Doc Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6800S.5 Symbol IC = 20 mA IC = 100 uA IE = 20 uA VCB = 400 V VCE = 450 V, VBE= 1.5 V VEB = 6.0 V VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCE=10V, IC =50mA, f= 20 MHz VCB = 30V, f = 1…2 MHz VCC = 330V, IC = 500 mA, IB1 =IB2 = 100 mA; RB1 =RB2 = 330 Ω VCC = 330V, IC = 500 mA, IB1 =IB2 = 100 mA (RB1 =RB2 = 100 Ω, PW= 2μs) Electrical Characteristic 4/ Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio * Min 400 500 10 –– –– –– 35 40 15 –– –– 25 –– –– Typ –– 800 11.5 0.05 0.01 0.01 85 95 50 0.25 0.8 35 30 115 Max –– –– –– 0.2 0.2 0.2 –– –– –– 0.5 1.0 –– 40 700 Units Volts Volts Volts μA μA μA BVCEO BVCBO BVEBO ICBO ICEV IEBO HFE1 HFE2 HFE4 VCE(sat)1 VBE(sat)1 fT Cobo ton Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Frequency Transition (Small Signal Current Gain) @ f= 20 MHz Output Capacitance Turn-On Time Volts Volts MHz pF ns Turn-Off Time toff –– 1700 2000 ns NOTES: * Pulse Test: Pulse Width = 300μsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0088B Doc