SSR2010CTS1

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR2010CTS1 20 AMP 100 VOLTS POSITIVE CENTERTAP SCHOTTKY RECTIFIER FEATURES: • PIV: 100 Volts • Low Forward Voltage Drop • Low Reverse Leakage • Hermetically Sealed Power Surface Mount Package • Guard Ring for Overvoltage Protection • Eutectic Die Attach ° • 175 C Operating Junction Temperature • TX, TXV, or Space Level Screening Available Designer’s Data Sheet Part Number / Ordering Information1/ SSR2010 CT S1 __ Screening2/ | L ____ = Not Screened | TX = TX Level | TXV = TXV Level | S = S Level Package L S1 = SMD1 MAXIMUM RATINGS RATING Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Output Current3/ (Resistive Load, 60Hz, Sine Wave, TA=25°C) Peak Surge Current3/ (8.3 ms Pulse, Half Sine Wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C) Operating and Storage Temperature Maximum Thermal Resistance3/ Junction to Case Note: 1/ For ordering information, price, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Both legs tied together. SSR2010CT SYMBOL VRRM VRWM VR IO IFSM VALUE 100 20 300 UNIT Volts Amps Amps T OP & TSTG RθJC -65 to +175 0.8 °C °C/W SMD1 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0067E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR2010CTS1 ELECTRICAL CHARACTERISTICS (Per Leg) CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = 25°C, Pulse) (IF = 5 Adc, TA = 25°C, Pulse) (IF = 10 Adc, TA = 25°C, Pulse) Instantaneous Forward Voltage Drop (IF = 5 Adc, TA = -55°C, Pulse) Reverse Leakage Current (Rated VR, TA = 25°C, Pulse) Reverse Leakage Current (Rated VR, TA = 100°C, Pulse) Junction Capacitance (VR = 10 Vdc, TA = 25°C, f = 1 MHz) Case Outline- SMD1 PIN OUT: PIN 1- ANODE 1 PIN 2- CATHODE PIN 3- ANODE 2 SYMBOL VF1 VF2 VF3 VF4 IR1 IR2 CJ MAXIMUM 0.68 0.7 0.77 0.84 100 5 400 UNIT Vdc Vdc μA mA pF NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0067E DOC