L9610
PWM PowerMOS controller
Features
■
High efficiency due to PWM control and
PowerMOS driver
■
Load dump protection
■
Load power limitation
■
External PowerMOS protection
■
Limited output voltage slew rate
SO16
Description
The L9610C is a monolithic integrated circuit
working in PWM mode as controller of an external
PowerMOS transistor in high side driver
configuration.
Table 1.
Features of the device include controlled slope of
the leading and trailing edge of the gate driving
voltage, linear current limiting with protection
timer, settable switching frequency fo, TTL
compatible enable function, protection status
ouput pin.
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Package
L9610C
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SO16N
L9610C013TR
SO16N
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The device is mounted in SO16 micropackage.
Device summary
Order code
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Packing
Tube
Tape and reel
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February 2009
Rev 2
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L9610
Contents
1
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
3.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5
Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
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4.1
Pulse width comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.2
Ground compatible triangle oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.3
Timer and protection latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.4
Under and overvoltage sense with load dump protection . . . . . . . . . . . . . 7
4.5
Short circuit current regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.6
Bandgap voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.7
Charge pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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Application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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5.1
Controlling a 120 W halogen lamp with the L9610C dimmer . . . . . . . . . . 11
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Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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L9610
1
Block diagram
Figure 1.
Block diagram
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L9610
2
Pin description
Figure 2.
Pin connection (top view)
Table 2.
Pin functions
Pin
Name
INT
2
IN
Analog input controlling the PWM ratio. The operating range of the input
voltage is 0 to VR.
3
VR
Output of an internal voltage reference.
4
EN
TTL compatible input for switching off the output.
5
PWL
If this pin is connected to GND and VS > 13 V, the duty cycle and the
frequency fo are reduced : this allows to transfer a costant power to the
load.
6
Osc
Current sink and source stage connection of a triangle oscillator with
definite voltage swing.
7
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Input of an operational amplifier for short current sensing and regulation.
8
NC
Not connected.
9
VS
Common supply voltage input.
10
GND
Common ground connection.
11
TIM
A capacitor connected between this pin and GND defines the protection
delay time.
12
MON
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A capacitor connected between this pin and OutG defines the gate
voltage slew rate.
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13, 15
Open collector monitoring output off the PowerMOS protection.
P2, P1 Connection for the charge pump capacitor.
14
BS
16
Out G
The capacitor connected between this pin and the source of the PowerMOS
allows to bootstrap the gate driving voltage.
Output for driving the gate of the external PowerMOS.
L9610
3
Electrical specification
3.1
Absolute maximum ratings
Table 3.
Absolute maximum ratings
Symbol
VS
Parameter
Value
Unit
26
V
Load dump:
5 ms ≤ trise ≤ 10 ms; τf Fall time constant = 100 ms; RSOURCE ≥ 0.5 Ω
60
V
Field decay:
5 ms ≤ tfall ≤ 10 ms; τr Rise time constant = 33 ms; RSOURCE ≥ 10 Ω
–80
V
Low energy spike: trise =1 μσ, tfall = 2 ms, RSOURCE ≥ 10 Ω
±100
Max. supply voltage
Transient peak supply voltage (R1 ≥ 100 Ω):
Is
Max. supply current (t < 300 ms)
VIN
TJ /Tstg
Thermal data
Table 4.
Thermal data
Symbol
Rth j-amb
Thermal resistance junction-alumina
Table 5.
Symbol
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Vs
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A
V
-55 to 150
°C
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Parameter
3.3
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-0.3 < VIN < VS - 2.5
Junction and storage temperature range
3.2
V
0.3
Input voltage
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Electrical characteristics
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Value
Unit
50
°C/W
Max.
Electrical characteristcs
(Tamb = -40 °C to 85 °C; 6 V < Vs < 16 V unless otherwise specified)
Parameter
Test conditions
Operating supply voltage
Min.
Typ.
Max.
Unit
16
V
2.5
6
mA
28
32
36
V
6
Quiescent current
VSC
Internal supply voltage clamp
VSH
Supply voltage high threshold
16
18.5
21
V
VSL
Supply voltage low threshold
4
5
6
V
VR
Reference voltage
3.3
3.5
3.7
V
IR
Reference current
1
mA
VINL
Input low threshold
0.2
VIN/VR
IS=200 mA
ΔVR ≤ 100 mV
0.13
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L9610
Table 5.
Electrical characteristcs (continued)
(Tamb = -40 °C to 85 °C; 6 V < Vs < 16 V unless otherwise specified)
Symbol
Parameter
Oscillator freq. constant
KS
Gate voltage slew rate
constant
(2)
3
KT
Protection time delay constant
(3)
0.12
VSi
Sense input volt.
Gate driving volt. above VS
Vs =16 V
VGOFF
Gate voltage in off condition
IG=100 µA
-5
VENL
Low enable voltage
VENH
High enable voltage
IEN
Enable input current
SR
Slew rate
without CS
Saturation voltage (pin 12)
VMON = 2.5 mA
1.
f0 = KF ⁄ CF
2.
dV G ⁄ ( dt ) = K S ⁄ C S
t prot = K T C T
2500
nF/s
9
nFV/ms
0.44
ms/nF
120
mV
16
V
1.2
V
-1
µA
0.5
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V
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Unit
2.0
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Max.
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Typ.
8
Input current
VMONsat
800
80
VGON
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Min.
KF
IIN
3.
Test conditions
(1)
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µA
V/µs
V
L9610
4
Functional description
4.1
Pulse width comparator
A ground compatible comparator generates the PWM signal which controls the gate of the
external PowerMOS. The slopes of the leading and trailing edges of the gate driving signal
are defined by the external capacitor CS according to :
dV G ⁄ ( dt ) = K S ⁄ C S
This feature allows to optimize the switching speed for the power and RFI performance best
suited for the application.
The lower limit of the duty cycle is fixed at 15 % of the ratio between the input and the
reference voltage (see Figure 3.). Input voltages lower than this value disable the internal
oscillator signal and therefore the gate driver.
4.2
Ground compatible triangle oscillator
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The triangle oscillator provides the switching frequency fo set by the external capacitor CF
according to:
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f0 = KF ⁄ CF
If the pin PWL (power limitation) is connected to ground and Vs is higher than the PWL
threshold voltage, the duty cycle and the fo frequency are reduced: this allows to transfer a
costant power to the load (see Figure 4.).
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Timer and protection latch
When an overcurrent occurs, the device starts charging the external capacitor CT ; the
protection time is set according to :
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t prot = K T ⋅ C T
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After the overcurrent protection time is reached, the PowerMOS is switched-off ; this
condition is latched by setting an internal flip-flop and is externally monitored by the low
state of the MON pin.
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To reset the latch the supply voltage has to fall below VSL or the device must be switched off.
4.4
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Under and overvoltage sense with load dump protection
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The undervoltage detection feature resets the timer and switches off the output driving
signal when the supply voltage is less than VSL.
If the supply voltage exceeds the max operating supply voltage value, an internal
comparator disables the charge pump, the oscillator and the external PowerMOS.
In both cases the thresholds are provided with suitable hysteresis values.
The load dump protection function allows the device to withstand, for a limited time, high
overvoltages. It consists of an active clamping diode which limits the circuit supply voltage to
7/15
L9610
VCLAMP and an external current limiting resistor R1. The maximum pulse supply current (see
abs. max. ratings is equal to 0.3 A. Therefore the maximum load dump voltage is given by:
V DUMP = V SC + 0.3R 1
In this condition the gate of the PowerMOS is held at the GND pin potential and thus the
load voltage is :
V L = V S – V CLAMP – V GS
Figure 3.
Typical transfer curve
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Figure 4.
The typical waveforms for the power limitation function
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L9610
4.5
Short circuit current regulation
The maximum load current in the short circuit condition can be chosen by the value of the
current sensing resistor RS according to :
I SC = V SI ⁄ R S
Two identical VS compatible comparators are provided to realize the short circuit protection.
After reaching the lower threshold voltage (typical value VSI-10 mV), the first comparator
enables the timer and the gate is driven with the full continuous pump voltage : when the
upper threshold voltage value is reached the second comparator maintains the chosen ISC
driving the NMOS gate in continuous mode.
This function, showed in Figure 5., speeds up the switch on phase for a lamp as a load.
4.6
Bandgap voltage reference
The circuit provides a reference voltage which may be used as control input voltage through
a resistive divider. This reference is protected against the short circuit current.
4.7
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Charge pump
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The charge pump circuit holds the N-MOS gate above the supply voltage during the ON
phase. This circuit consists of an RC astable which drives a comparator with a push-pull
output stage. The external charge pump capacitor CP must be at least equal to the NMOS
parasitic input capacitance.
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For fast gate voltage variation CP must be increased or the bootstrap function can be used.
The bootstrap capacitor should be at least 10 times greater than the PowerMOS parasitic
capacitance.
The charge pump voltage VPUMP can reach to :
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V PUMP = 2V S – V BE – V CESAT
The circuit is disabled if the supply voltage is higher than VSH.
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L9610
Figure 5.
Typical waveforms for short circuit current condition.
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L9610
5
Application circuit
Figure 6.
Application circuit
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1. All node voltages are referred to ground pin (GND).
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2. The currents flowing in the arrow direction are assumed positive
without CBS : CP = 1 nF
without CBS : CBS must be at least 10 times higher than the gate capacitance : CP = 100 pF.
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5.1
Controlling a 120 W halogen lamp with the L9610C dimmer
The L9610C lamp dimmer is used to control the brightness of vehicle headlamps using H4
type lamps (see Figure 7.). With switch S1 open the full supply voltage is applied to the
lamps: closing the switch it is a possible to reduce the average lamp voltage as desired:
R3
VL = VS ---------------------R2 + R3
If pin 5 is connected to ground the average lamp voltage is constant, even for supply
voltages in excess of 13 V.
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L9610
Figure 7.
Application circuit with controlling a 120 W halogen lamp
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The sensing resistor RS and timing capacitor Ct should be dimensioned according to :
V Si
R S = -----------------------------------------------------2Inom ( @V S = 14V )
2 × limitation time
C t = ------------------------------------------------KT
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In normal conditions (VCC = 14 V, maximum brightness) the voltage drop across the sense
resistor must be 50 mV. The current limiter intervenes attwice the nominal current, Inom.
The timing capacitor Ct (Vct = 3.5 V) must be chosen so that the delay before intervention is
twice the duration of the current limitation at power-on.
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The optimal value of the oscillator frequency, taking tolerances into account, must be slightly
higher than the frequency at which lamp flicker is noticable (min 60 Hz).
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The switching times are a compromise between possible EMI and switching power losses.
The recommended value for Cs is 47 pF.
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L9610
6
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 8.
SO16 narrow mechanical data and package dimensions
mm
inch
OUTLINE AND
MECHANICAL DATA
DIM.
MIN.
TYP.
A
MAX.
MIN.
TYP.
MAX.
1.750
0.0689
A1
0.100
0.250 0.0039
0.0098
A2
1.250
0.0492
b
0.310
0.510 0.0122
0.0201
c
0.170
0.250 0.0067
0.0098
D
9.800
9.900 10.000 0.3858 0.3898 0.3937
E
5.800
6.000
6.200 0.2283 0.2362 0.2441
E1
3.800
3.900
4.000 0.1496 0.1535 0.1575
e
1.270
h
0.250
L
0.400
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0.0500
0.500 0.0098
0.0197
1.270 0.0157
0.0500
k
8.000
0.3150
ccc
0.100
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0.0039
"D" do not include mold flash or protrusions
Mold flash, protrusions or gate burrs shall not exceed 0.15mm
in total (both side).
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SO16 (Narrow)
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0016020 E
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L9610
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Revision history
Table 6.
Document revision history
Date
Revision
Changes
09-Oct-2000
1
Initial release.
18-Feb-2009
2
Document reformatted.
Added Table 1: Device summary on page 1.
Updated Section 6: Package information on page 13.
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L9610
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