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PM6613NTR

PM6613NTR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    VFQFN20_EP

  • 描述:

    IC BATTERY CHARGER HIEFF 20QFN

  • 数据手册
  • 价格&库存
PM6613NTR 数据手册
PM6613N 2 to 4-cell Li-Ion, Li-FePO4 battery charger with SMBus interface, N-channel RBFET and BATFET MOSFET selectors Datasheet - production data Applications • Mobile PC: – UMPC/MID and tablets – Netbook and notebook computers Description VFQFPN 3x3 20L Features • Synchronous buck converter with N-channel high-side, low-side power MOSFET integrated drivers • 350 kHz or 700 kHz switching frequency, selectable with SMBus • AC adapter input voltage range 9 V - 24 V • 5 V bias input voltage supply • Battery charge voltage range 2.5 V -18 V • ±1.53% charge voltage accuracy • 0.1% cell charge voltage resolution The PM6613N is a high efficiency battery charger with SMBus communication interface. It includes a synchronous switching DC-DC converter with N-channel high-side and low-side power MOSFET drivers. The possibility to set the switching frequency with SMBus by choosing one of the two preset values of 350 kHz or 700 kHz assures the best trade-off between power conversion efficiency and PCB cost and size. Integrated loop compensation network and softstart allow the reduction of the number of external components. The PM6613N integrates 2 charge pumps to drive N-channel ACFET/RBFET and BATFET MOSFETs. The SMBus communication interface is used to set the battery charge current and voltage. • ±3% charge current accuracy • ±3% input current accuracy • Overvoltage, overcurrent protections • Battery, inductor, power MOSFET short-circuit protection The PM6613N charges 2 to 4 series Li-Ion or LiFePO4 cells, for mobile PC applications. It is available in a compact VFQFPN 3x3 mm package. • Internal loop compensation network Table 1. Device summary • Integrated soft-start • Selector – N-channel ACFET/RBFET MOSFET driver – N-channel BATFET MOSFET driver Order code Package Packing PM6613NTR VFQFPN 3x3 20L Tape and reel • System – 1 mA quiescent supply current – 17 µA - 35 µA sleep mode current (BATFET charge pump off - on) – Thermal shutdown list November 2013 This is information on a product in full production. DocID024974 Rev 3 1/30 www.st.com 30 Contents PM6613N Contents 1 Device pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 5 3.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.2 Operating characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Operating description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.1 SMBus communication interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2 ACFET/RBFET and BATFET system power selectors . . . . . . . . . . . . . . . 17 4.3 Adapter detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.4 Internal charge pumps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.5 Switching frequency selection and EMI adjustments . . . . . . . . . . . . . . . . 18 4.6 Charge settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.7 Adapter constant power function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.8 Input current limit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.9 Thermal shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.10 Battery protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.11 Adapter insertion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.12 Adapter removal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 The PM6613N registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.1 Charge option register (CHRG_OPT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.2 STATUS register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.3 Charge current register (CHRG_AMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.4 Charge voltage register (CHRG_VOLT) . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5.5 Input current register (INPUT_AMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 2/30 DocID024974 Rev 3 PM6613N List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Typical operating characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 SMBus communication timing values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Low power SMBus DC specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 SMBus command summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Valid battery charge voltage ranges for Li-Ion battery cells . . . . . . . . . . . . . . . . . . . . . . . . 19 Valid battery charge voltage ranges for LiFePO4 battery cells. . . . . . . . . . . . . . . . . . . . . . 19 Battery overvoltage detection ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Adapter insertion sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Adapter removal sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 CHRG_OPT 0x12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Status 0x13. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 CHRG_AMP 0x14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 CHRG_VOLT 0x15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 INPUT_AMP 0x3F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 VFQFPN 3x3x1.0 20 L pitch 0.4 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 DocID024974 Rev 3 3/30 Device pinout 1 PM6613N Device pinout 16 ACOK 17 IOUT ALARM# 18 19 SCL ACDRV 14 13 12 11 ACN ACP 15 10 9 SRN BATFET LOW GND B2B PM6613N 6 5 BTST 8 4 ILIM ACDIV SRP 3 HIGH 7 2 PH DCIN 1 SDA 20 Figure 1. The PM6613N pinout AM16597v1 4/30 DocID024974 Rev 3 PM6613N 2 Pin description Pin description Table 2. Pin description Pin Name 1 PH Description High-side power nMOS driver source. Connection to the high-side nMOS source pin and low-side nMOS drain pin. 2 HIGH High-side power nMOS driver output. Connection to the high-side nMOS gate pin. In critical application conditions, a series resistor can be used to increase the nMOS turn-on/off time and to limit the phase ringing, R = 4.7 Ω. 3 BTST High-side power nMOS driver power supply. Connection to 5 V power supply voltage through a Schottky diode, and to the phase net through a filtering capacitor. 4 LOW Low-side power nMOS driver output. Connection to the low-side nMOS gate pin. In critical application conditions, a series resistor can be used to increase the nMOS turn-on/off time and to limit the phase ringing, R = 4.7Ω. 5 GND Device analog and power ground reference. 6 DCIN 5 V input power supply. It is used to bias the internal logic and to supply the internal power drivers. An RC filter is used to limit inrush current and voltage spikes, typical value R=1 Ω, C=10 μF. 7 SRP Battery charge current sense resistor positive pin. 8 SRN Battery charge current sense resistor negative pin. 9 BATFET 10 ACN Input current sense resistor negative input. System power connection. 11 ACP Input current sense resistor positive input. RBFET nNMOS drain pin connection. 12 ACDRV 13 B2B Output driven by AC adapter back-to-back MOS switches. Connection to the ACFET and RBFET nMOS source pins. 14 ACDIV Adapter detection pin. Adapter resistor divider connection. 15 ILIM 16 ACOK AC adapter detection status pin. Open-drain pin. It pulls high, when a valid adapter voltage is detected: 2 V < ACDIV < 2.625 V. It pulls low when ACDIV > 2.625 V or ACDIV < 2 V. 17 IOUT Adapter/battery charge current output pin, selectable using SMBus command. IOUT voltage is 20 times the differential voltage across sense resistor. 18 ALARM# nMOS driver output. Connection to the BATFET nMOS gate pin, through a series resistor used to limit the inrush current. nMOS driver output. Connection to the ACFET and RBFET nMOS gate pin, through a series resistor used to limit the inrush current. Battery charge current limit setting pin. Open-drain output pin. Low when a fault condition is detected, to trigger the system microcontroller interrupt. DocID024974 Rev 3 5/30 Pin description PM6613N Table 2. Pin description (continued) 6/30 Pin Name Description 19 SCL SMBus clock pin. Connection to the SMBus clock line. Open-drain pin, a pull-up resistor R = 10 kΩ is used. 20 SDA SMBus data pin. Connection to the SMBus data line. Open-drain pin, a pull-up resistor R = 10 kΩ is used. DocID024974 Rev 3 SYS 3.9kR DocID024974 Rev 3 DCIN GND STL56N3LLH5 nMOS 6 10uF SRP CDC SRN +5V RDC 1R SYS ACN ACN 1uF CBT1 BATFET BATFET 5 6 7 8 LSG D1 ACP RSA 10mR ACP 11 B2B ACDRV 13 12 3.9kR RACDVR RBFET RBFETG B2BC nMOS SRN 4 3 2 1 GND B2B ACDRV 56kR 430kR ADP ACFET BAT54JFILM WAKE 1 2 3 4 SRP LS D3 BAT54JFILM SCL 5 ALARM# PM6613N ACDIV 15 14 RACDIVL LOW BTST IOUT 4 ILIM D2 110kR RACDIVU RWAKE +5V STL56N3LLH5 10uF STL56N3LLH5 3 THP BTST 220nF RBT 0R LOW 20 ACOK ACDIV NM 1MR RILU 1 2 3 4 10uF COUT1 CBT 21 SDA HIGH 19 PH 18 2 1 16 PH PH 17 4.7uH L1 HIGH SDA SCL ALARM RILL ILIM 10mR RSB HS SDA +5V RSDAU 10kR +5V RSCLU 10kR IOUT ACOK nMOS + COUT2 22uF CIN1 nMOS BATT nMOS 5 6 7 8 5 6 7 8 STL56N3LLH5 4 3 2 1 SCL 10kR RIOUT 8 7 6 5 BATT BATFETG BATFET ALARM# CIOUT +5V RALARMU 10kR 100nF SYS IOUT_FLT ACOK +5V RACOKU 1MR WAKE ILIMext CIN05 10uF RFLT2 C5V 22uF CADP1 CADP0 3.9R 2.2uF; 10V +5V RFLT1 3.9R 2.2uF; 25V +5V ADP PM6613N Pin description Figure 2. Typical application circuit STL56N3LLH5 8 7 6 5 10 9 7 8 4 3 2 1 STPS2L30A RBATFET AM16596v1 7/30 Electrical characteristics PM6613N 3 Electrical characteristics 3.1 Absolute maximum ratings Stresses beyond those listed in "absolute maximum ratings" may cause permanent damage to the device. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Table 3. Voltage characteristics PINs Values BATFET, ACDRV, BTST, HIGH to GND -0.3 to 36 SRP, SRN, B2B, ACP, ACN to GND -0.3 to 30 LOW, DCIN, ACDIV, ILIM to GND -0.3 to 6 PH to GND -2 to 30 BTST to PH -0.3 to 6 ACOK, IOUT, ALARM#, SCL, SDA to GND -0.3 to 6 SRP to SRN, ACP to ACN -0.5 to 0.5 ACDRV to B2B -0.3 to 7 BATFET to SRN -0.3 to 7 Unit V Table 4. Thermal characteristics 8/30 Symbol Parameters Values Unit Rth(JA) Thermal resistance junction-to-ambient 45 °C/W TJ Junction operating temperature range -40 to 125 TA Ambient operating temperature range -40 to 85 Tstg Storage temperature range -50 to 150 DocID024974 Rev 3 °C PM6613N Electrical characteristics Table 5. Electrical characteristics Symbol Parameters Test conditions Min. Typ. Max. 40 60 Unit Supply current ISLP IOP Total current (DCIN, SRN, SRP, ACP, ACN, PH) consumption in sleep mode Total quiescent supply current ACDIV < ACDIVSLP BATFET on uA ACDIV < ACDIVSLP BATFET off 18 35 Charge disabled 1.25 2.1 mA V Supply voltage DCINUVLO DCIN UVLO rising threshold 3.8 4 4.2 DCIN UVLO falling threshold 3.65 3.85 4.05 ACOK comparator ACDIVTH ACDIV rising voltage threshold to assert ACOK 1.87 2 2.13 V ACDIVHYS ACDIV voltage threshold hysteresis 5 20 35 mV ACDIVSLP ACDIV voltage threshold to enable internal bias 0.55 0.65 0.75 V ACDIVOV ACDIV rising threshold voltage to determine an OV condition that let ACOK go low 2.55 2.625 2.70 V ACDIVOV_H tR_ACOK ACDIV overvoltage hysteresis Rising edge deglitch time 35 65 95 mV AD bit cleared 230 250 270 ms BSE bit cleared 600 700 800 kHz BSE bit set 300 350 400 Switching frequency fSW Buck converter switching frequency Charging voltage VBATT_ERR Charge voltage accuracy -1.53 1.53 % ICHG = 0.128 A RSENSE = 10 mΩ -50 50 % ICHG = 8.192 A RSENSE = 10 mΩ -3 +3 Charging current ICHG_ERR Charge current accuracy VSRN = 12 V Adapter current sense amplifier IADP_G Current sense amplifier gain 18 IADP_G_ERR Current sense amplifier gain error -10 DocID024974 Rev 3 20 22 10 % 9/30 Electrical characteristics PM6613N Table 5. Electrical characteristics (continued) Symbol IADP_SRC Parameters IACP + IACN source current Test conditions Min. Typ. Max. Unit VSENSE = = ACP- ACN = 0 5 25 45 mA 20 22 Battery current sense amplifier IBATT_G Current sense amplifier gain 18 IBATT_G_ERR Current sense amplifier gain error -10 +10 % VSENSE = = SRP- SRN = 0 5 25 50 mA AM[1:0]=0x0 0.25 0.45 0.65 A AM[1:0]=0x1 0.70 0.90 1.10 AM[1:0]=0x2 1.10 1.30 1.50 AM[1:0]=0x3 1.50 1.70 1.90 255 280 305 mA 1.9 2.3 2.7 mA B2B rising threshold to enable charge 4.4 5 5.6 V VB2B_LOW hysteresis 300 450 600 mV VILIM_FALL ILIM falling threshold for disabling charge 55 75 95 mV VILIM_RISE ILIM rising threshold for enabling charge 75 95 115 2.45 2.55 2.65 V 85 100 115 mV Li- Ion 120 170 220 mV/cell LiFePO4 100 140 170 IBATT_SRC ISRP + ISRN source current Light load comparator ILL ILL_hys Light load average current falling threshold for asynchronous working mode. Low-side MOSFET turned on only when ICHG > ILL ILL hysteresis B2B IB2B VB2B_LOW VB2B_LOW_H B2B pull-down current ACOK = ‘0’ DCIN = 5 V ILIM comparator Battery fault comparators VBATT_LOW Battery voltage rising threshold for enabling charge VBATT_LOW_HIS VBATT_LOW comparator hysteresis T VBATT_OV 10/30 Battery overvoltage rising threshold as difference between SRN voltage and CHRG_VOLT register value DocID024974 Rev 3 PM6613N Electrical characteristics Table 5. Electrical characteristics (continued) Symbol Parameters Test conditions Min. Typ. Max. Unit Li- Ion 75 90 105 mV/cell LiFePO4 55 75 85 VBATT_OV_H VBATT_OV overvoltage hysteresis VBATT_OV_PD Pull down current on SRN pin during overvoltage condition 3.5 5 6.5 mA IBATT_OC Battery overcurrent threshold as difference with CHRG_AMP register value 1.7 2 2.3 A BATTERY overcurrent hysteresis 300 400 510 mA Adapter input overcurrent threshold as difference with INPUT_AMP register value 1.7 2 2.3 A IADP_OC overcurrent hysteresis 250 400 550 mA IBATT_OC_H Adapter fault comparators IADP_OC IADP_OC_H BATFET driver VBATFET_DRV BATFET gate driving voltage respect to SRN pin BATFET-SRN 5.3 6 6.6 V IBATFET_SHORT BATFET driver max. current BATFET shorted to SRN 35 60 80 mA VACDRV_DRV RBFET gate driving voltage respect to B2B pin ACDRV-B2B 5.3 6 6.6 V IACDRV_SHORT BATFET driver max. current BATFET shorted to SRN 35 55 75 mA ACDRV driver DocID024974 Rev 3 11/30 Electrical characteristics 3.2 PM6613N Operating characteristics Table 6. Typical operating characteristics Symbol Parameters Test conditions Min. Typ. Max. Unit Charging voltage VCELL_RES Cell voltage resolution 4 mV/cell 64 mA 3 ms Referred to input 1 mV Referred to input 1 mV Charging current ICHG_RES Charge current control resolution RSENSE = 10 mΩ A2B adapter to battery comparator tR_A2B Rising edge deglitch time Adapter current sense amplifier IADP_VOS Current sense amplifier offset Battery current sense amplifier IBATT_VOS Current sense amplifier offset HS short detection (1) VHS_SHORT Phase to GND threshold for high-side short detection when low-side is on 200 mV tHS_SHORT Mask time on HS_SHORT from low-side turn-on time 300 ns 42 kΩ 5 kΩ 42 kΩ 5 kΩ 3.6 Ω BATFET driver RBATFET_DRV BATFET driver output impedance IBATFET < 20 μA RBATFET_OFF Charge pump off resistance ACDRV driver RACDRV_DRV RBFET driver output impedance IACDRV < 20 μA RACDRV_OFF Charge pump off resistance HS driver(1) HSRON High-side driver turn-on resistance HSROFF High-side driver turn-off resistance 0.7 LSRON Low-side driver turn-on resistance 3.2 LSROFF Low-side driver turn-off resistance 0.8 VBTST -VPH = 5 V LS driver(1) 1. Guaranteed by design 12/30 DocID024974 Rev 3 Ω PM6613N 3.3 Electrical characteristics Recommended operating conditions (DCIN = 5 V, Tj = 25 °C unless otherwise specified) Table 7. Recommended operating conditions Symbol Parameters Test conditions Min. Typ. Max. Unit 5.5 V 24 V V/cell Supply voltage DCINOP VADP DCIN input voltage operating range 4.5 Adapter maximum voltage Charging voltage VCELL Cell charge voltage VBATT Charge voltage range Li-Ion 4 4.508 LiFePO4 3.4 3.908 6.8 18.032 V 0.128 16.320 A Charging current ICHG Buck converter regulated charge current range RSENSE = 10 mΩ A2B adapter to battery comparator A2BTH IA2B A2B rising threshold A2B sink current from B2B pin 0.35 0.45 0.55 V 12 14 16 μA Adapter current sense amplifier IADP_CM IADP input common mode minimum voltage 2.5 V 2.5 V Battery current sense amplifier IBATT_CM IBATT input common mode minimum voltage Thermal protection TSHUT Temperature rising threshold for disabling charge 160 °C TSHUT_H Thermal shutdown temperature hysteresis 10 °C DocID024974 Rev 3 13/30 Electrical characteristics PM6613N Table 8. SMBus communication timing values Symbol Parameters Min. Max. Unit 100 kHz fSMB SMBus operating frequency 10 t(BUF) Bus free time between stop and start condition 4.7 th(STA) Hold time after (repeated) start condition. After this period, the first clock is generated tSU(STA) Repeated start condition setup time tSU(STOP) Stop condition setup time μs 4 4.7 4 tH(DAT) Data hold time 300 tSU(DAT) Data setup time 250 tTIMEOUT Detect clock high timeout ns 50 tw(L) Clock low period 4.7 tw(H) Clock high period 4 μs μs 50 tr Clock/data fall time 300 tf Clock/data rise time 1000 Time in which a device must be operational after power-on reset 500 ms Max. Unit 0.8 V tPOR ns Table 9. Low power SMBus DC specifications Symbol Min. VIL Data, clock input low voltage VIH Data, clock input high voltage VOL Data, clock output low voltage 0.4 ILEAK Input leakage ±5 IPULLUP VDD 14/30 Parameters 2.1 VDD Current through pull-up resistor or current source 100 350 Nominal SMBus voltage 2.7 5.5 DocID024974 Rev 3 μA V PM6613N Operating description 4 Operating description 4.1 SMBus communication interface The PM6613N communicates to the system MCU by the SMBus interface. The PM6613N is compliant with the system management Bus specification v2.0 (please refer to the official website www.smbus.org). The PM6613N uses a simplified command subset, with SMBus read-word and write-word protocols to communicate to the system MCU.The PM6613N works in slave mode only; according to the SMBus specifications, the slave address is set by using 7 bits, the value is 0b0010010 (0x12). The SMBus interface input pins SDA (data) and SCL (clock) have Schmitt-trigger inputs. Selecting pull-up resistors by 10 k for both of them to achieve rise times according to the SMBus specifications. A watchdog timer adjust function is provided within register 0x12. The charge is suspended if IC does not receive write charge voltage or write charge current command within the watchdog time period and watchdog timer is enabled. The charge is resumed after receiving write charge voltage or write charge current command when watchdog timer expires and charge suspends. Figure 3. SMBus communication timing waveforms tSU(STA) SCL tW(H) tW(L) tf tr t(BUF) tr SDA th(STA) th(DAT) tsu(DAT) th(DAT) tsu(STOP) AM16598v1 DocID024974 Rev 3 15/30 Operating description PM6613N Figure 4. SMBus write-word and read-word protocols Write-Word Format SLAVE ADDRESS S 7 bits W ACK COMMAND BYTE ACK (CHARGER REGISTER ) 1b 1b 8 bits 0 0 1 0 0 1 0 0 0 MSB LOW DATA BYTE 1b 8 bits LSB 0 MSB ACK HIGH DATA BYTE 1b ACK P 8 bits LSB 0 MSB 1b LSB 0 Read-Word Format SLAVE ADDRESS S 7 bits W ACK COMMAND BYTE ACK S (CHARGER REGISTER ) 1b 1b 8 bits 0 0 1 0 0 1 0 0 0 MSB SLAVE ADDRESS 1b LSB 0 7 bits Start Condition or Repeated Start Condition P Stop Condition W Write Bit ( Logic - LOW ) R Read Bit (Logic - HIGH ) Acknowledge (Logic - LOW ) XXXX Master to Slave N ACK 1b 1b 0 0 1 0 0 1 0 1 0 MSB S ACK R ACK LOW DATA BYTE 8 bits ACK 1b LSB 0 MSB HIGH DATA BYTE 8 bits N P ACK 1b LSB 1 Not - Acknowledge (Logic HIGH ) XXXX Slave to Master AM16599v1 16/30 DocID024974 Rev 3 PM6613N Operating description The PM6613N supports 7 SMBus commands as listed in Table 10. 3 2 ARED CF 0 4 BED CI 5 SOVR BOC LB AOV AUV HS 0 0 0 0 0 0 0 0 0 0 0 0 0 AMP[13:6] 0x14 Res Reserved Reset value 0 0 0 0 0 CHRG_VOLT 0x15 1 BOV 0 1 6 0 IOC CHRG_AMP 0 0 AOC Reset value 0 0 RBSS Reserved 0 1 R HBRO STATUS 0x13 IS 0 7 0 8 9 EE 0 AM[1:0] 10 EFA 1 TS 11 13 1 PF 1 12 0 BSE Reset value 14 CHRG_OPT 0x12 WD[1:0] Register 15 Address AD Table 10. SMBus command summary VOLT[14:1] R Reset value R 0 0 0 INPUT_AMP 0 0 0 0 0 0 0 0 0 0 0 0 0 AMP[13:7] 0x3F Res Reserved Reset value 1 0 0 0 MAN_ID 0 Manufacturer ID 0xFE Reset value 0 0 0 0 0 0 0 DEV_ID 0 0 0 1 0 0 0 0 0 0 0 0 0 0 Device ID 0xFF Reset value 4.2 0 0 0 0 0 0 0 0 0 ACFET/RBFET and BATFET system power selectors The PM6613N integrates 2 charge pumps to drive nMOS selectors for ACFET/RBFET and BATFET. At reset condition, the PM6613N internal circuitry controls the RBFET turn-on, to avoid inrush current flowing from ADP (adapter) to SYS (system). The BATFET selector connects (disconnects) the battery from the system. At reset condition, the BATFET selector is controlled by the internal circuitry. During a charging process, if the adapter is disconnected, the PM6613N stops any charge operation and remains in sleep mode: if the BSE is set, the PM6613N connects the battery to the system. If the SOVR bit is set, the internal circuitry can be disabled: the nMOS selectors can be manually controlled changing the ARED and BED bits respectively. DocID024974 Rev 3 17/30 Operating description 4.3 PM6613N Adapter detection The ACOK pin is an open-drain output signal to inform the system MCU that a valid ADAPTER voltage has been detected by the ACDIV pin (ACDIV > 2 V). At reset condition, for safety reason, a delay is applied to the internal circuitry, in order to avoid false adapter insertions. An adapter insertion is detected when the voltage across ACDIV pin is higher than 2.0 V. A voltage divider assures that when the adapter is inserted a voltage between 2.0 V and 2.65 V is applied to ACDIV pin. The internal circuitry checks for 250 ms that this voltage is stable, and in this case enables the ACFET/RBFET selectors and the ACOK pin. The delay can be removed clearing the AD bit on the CHRG_OPT register. 4.4 Internal charge pumps Some charge pumps allow the PM6613N to supply the internal drivers necessary to drive the ACFET/RBFET selectors, the BATFET selector and the high-side MOSFET. The ACFET/RBFET selectors are switched off/on by the ACDRV pin. An internal charge pump is used to lift the ACDRV voltage using the voltage coming from the B2B pin.The high-side MOSFET is controlled by the HIGH pin. A charge pump receives the base voltage from the PH pin, allowing the HIGH pin to be toggled. The BATFET selector is driven by the BATFET pin whose voltage is bootstrapped using the BTST pin. 4.5 Switching frequency selection and EMI adjustments The PM6613N buck converter switching frequency can be chosen, by setting bit 9 and bit 10 of the CHRG_OPT register. The choice depends on the compromise among efficiency, inductance, output capacitor, and the PCB area. An additional offset can be applied to the nominal frequency to avoid EMI issues, setting the bit EE of the CHRG_OPT register. The offset can be set to ±15% changing the bit EFA of the CHRG_OPT register. 4.6 Charge settings The PM6613N uses 3 SMBus registers and the ILIM pin to control the charging process. The CHRG_VOLT register sets the voltage limit, ranging from a minimum value of 6800 mV to a maximum value of 18032 mV, with 2 mV step resolution. Not all the values are allowed within the above range (see Table 11 and Table 12). Any attempt to write a non valid value causes the internal circuitry to clear the register and stop any charging process. The CHRG_AMP register sets the current limit drained to the battery. The allowable value ranges from a minimum of 128 mA to a maximum of 16320 mA. Setting a value outside this range causes the PM6613N to clear the register and terminate any charging process. The charging current is sensed measuring the differential voltage between SRP and SRN pins where a small resistor value is connected to. A suggested value is 10 mΩ, and not more than 20 mΩ. Greater values increase the sensitivity of the current sensing and the regulation accuracy, but cause a higher power loss and could lead to an overcurrent protection latching. The charge current limit can be set forcing a voltage through the ILIM pin too. The PM6613N automatically sets the maximum charge current by choosing the minimum value between the ILIM voltage value and the CHRG_AMP register. The relationship between the ILIM voltage and the input current limit is reported below: 18/30 DocID024974 Rev 3 PM6613N Operating description Equation 1 VILIM = R SB ⋅ ICHG ⋅ 10 + 0.03125 whereas RSB is the sensing resistor connected between the SRP and SRN pins and ICHG is the charge current limit. The charge is disabled when the ILIM voltage decreases below 70 mV and re-enabled when increases over 90 mV. The ILIM control can be disabled by pulling it to 5 V. Table 11. Valid battery charge voltage ranges for Li-Ion battery cells CHRG_VOLT Charge voltage [mV] Cells Min. Max. Min. Max. 2 0x1F40 0x2338 8000 9016 3 0x2EE0 0x34D4 12000 13524 4 0x3E80 0x4670 16000 18032 Table 12. Valid battery charge voltage ranges for LiFePO4 battery cells CHRG_VOLT Charge voltage [mV] Cells 4.7 Min. Max. Min. Max. 2 0x1A90 0x1E88 6800 7816 3 0x27D8 0x2DCC 10200 11724 4 0x3520 0x3D10 13600 15632 Adapter constant power function The adapter constant power function manages the amount of input current flowing to the system and to the battery during a charging process. If the input current exceeds the chosen input current limit, the PM6613N keeps the input current at the limit decreasing the charging current. In this manner the system load has the priority. As the system load current increases, the charging current linearly decreases down to 0 A. The input current is sensed measuring the differential voltage between ACP and ACN pins where a small resistor is connected. A suggested value is 10 mΩ, and eventually not more than 20 mΩ. Greater values increase the sensitivity and a finer current limit management, but cause a higher power loss and could lead to an overcurrent protection due to a higher voltage ripple. The INPUT_AMP register sets the input current limit through SMBus. Valid ranges are between 128 mA and 16256 mA. Any attempt to write a value outside this range causes the register to be cleared and any charging process to be stopped. DocID024974 Rev 3 19/30 Operating description 4.8 PM6613N Input current limit protection An input current limit protection is integrated into the PM6613N. When the input current, sensed by ACP and ACN pins, reaches 2 A more than the value stored on INPUT_AMP, the internal circuit stops any charging process and sets the AOC bit of the STATUS register. When the fault condition is not more present for 2.5 ms, the charging process is recovered by a soft-start. 4.9 Thermal shutdown A thermal protection feature is integrated in the PM6613N. If the junction temperature (TJ) exceeds 165 °C, the internal circuitry stops any charging process and the bit TS of STATUS register is set. When TJ falls below 145 °C, the charger exits from the fault condition and after 2.5 ms the charging process resumes by a soft-start. 4.10 Battery protection Several protection features disable the charging process if the battery condition falls in one of the following conditions: • battery undervoltage • battery overvoltage • battery overcurrent A voltage fault is detected sensing the battery voltage on SRN pin. A battery undervoltage condition occurs when the SRN voltage is below 2.5 V: the LB bit of the STATUS register is set. A battery overvoltage occurs when SRN voltage exceeds the charging voltage according to the Table 13: Table 13. Battery overvoltage detection ranges Battery type Overvoltage threshold Li-Ion CHRG_VOLT[mV]+170 mV* cells Li-FePO4 CHRG_VOLT[mV]+144 mV* cells Battery current is sensed by the current flowing through a small resistor connected between SRP and SRN pins. An overcurrent condition occurs when the battery average current exceeds the value set in the CHRG_AMP register by 2 A: the BOC bit of the STATUS register is set. 4.11 Adapter insertion When the ACDIV pin has a voltage under the ACDIVSLP (see Table 14), the PM6613N is in sleep mode. If BSE of CHRG_OPT register is set, the BATFET selector is kept closed, allowing the battery to supply the system. When the adapter is inserted, the ACDIV pin voltage rises, and when it reaches a 0.65 V threshold, the PM6613N goes out of the sleep mode. When the ACDIV pin reaches 2 V threshold, an internal comparator monitors this condition for a programmable deglitch time, set to 250 ms at power-on reset. If the condition is stable after this time, the ACOK pin goes high. This time can be reduced setting the AD bit 20/30 DocID024974 Rev 3 PM6613N Operating description of CHRG_OPT register. When ACOK is high, the ACFET selector has to be switched on, in order to supply the B2B pin. This pin is used to provide the offset for the charge pump that supplies the ACFET/RBFET selectors. Once B2B reaches the 2.5 V threshold, the BATFET selector is switched off and the battery is disconnected from the system: in this case the current flows to the system through the body diode of the selector. When the B2B pin crosses the battery voltage (sensed by SRN pin) by 255 mV, the RBFET is switched ON. From now on the system is supplied by the adapter. The described sequence is summarized in the below table: Table 14. Adapter insertion sequence 4.12 Condition Action Adapter insertion ACDIV voltage rises ACDIV > 0.65 V PM6613N goes out of sleep mode B2B pin forces a low voltage ACDIV > 2 V ACOK pin goes high after 250 ms B2B pin stops forcing voltage ACFET is turned on B2B voltage rises B2B > 2.5 V BATFET is off B2B > SRN+225 mV ACFET/RBFET is on Adapter removal When the adapter is unplugged, a disconnection sequence occurs, bringing the charger into a sleep mode. When the ACDIV pin goes below 1.95 V, the ACOK pin goes immediately low: there's no deglitch time in this case. Any charging process is interrupted and the B2B pin is internally discharged. The B2B pin is used to sense the system voltage through the ACFET/RBFET selectors. When the B2B pin goes below the value of the battery plus 225 mV, the ACFET/RBFET selectors are opened if SOVR bit of CHRG_OPT is set, and the BATFET selector is closed if the BSE bit of CHRG_OPT is set, allowing the battery to supply the system. As the system voltage is much closer to the battery voltage, any inrush current caused by system capacitors is avoided. When the ACDIV voltage goes below 0.6 V the PM6613N is in sleep mode. The sequence is summarized in Table 15 Table 15. Adapter removal sequence Condition Action Adapter unplugged ACDIV voltage decreases ACDIV < 1.95 V ACOK goes low B2B pin forces a low voltage Internal circuitry disables any charging process B2B < SRN+ 225 mV ACFET/RBFET selectors opened BATFET selector closed ACDIV < 0.6 V The PM6613N is in sleep mode DocID024974 Rev 3 21/30 The PM6613N registers PM6613N 5 The PM6613N registers 5.1 Charge option register (CHRG_OPT) Address: 0x12 Reset value: 0x7101 Table 16. CHRG_OPT 0x12 15 14 13 AD WD[1:0] 12 11 10 9 BSE PF EFA EE 8 7 6 AM[1:0] IS 5 4 3 SOVR BED ARED 2 1 CF 0 CI Res rw • • • • • 22/30 rw rw rw rw rw rw rw rw rw rw rw rw rw rw Bit 15 AD: ACOK deglitch – set by software to enable a delay for the adapter insertion – 0: the PM6613N waits for 250 ms for adapter voltage detection – 1: the PM6613N waits for a time < 50 μs for adapter voltage detection Bit [14:13] WD: watchdog – set by software to enable and select the timeout of the PM6613N watchdog – 00: watchdog disabled – 01: enabled, timeout at 44 sec. – 10: enabled, timeout at 88 sec. – 11: enabled, timeout at 175 sec. Bit 12 BSE: BATFET sleep enabled – set by software to control the BATFET selector behavior, when the PM6613N is in sleep mode – 0: BATFET disabled during sleep mode – 1: BATFET enabled during sleep mode Bit 11 PF: PWM frequency – set by software to select the working PWM frequency of the buck converter – 0: PWM frequency set to 700 kHz – 1: PWM frequency set to 350 kHz Bit 10 EFA: EMI frequency adjustments – set by software in order to increase or decrease by 15% the PWM frequency of the buck converter when EE bit is enabled – 0: PWM frequency decreased by 15% – 1: PWM frequency increased by 15% DocID024974 Rev 3 PM6613N The PM6613N registers • • • • • • • Bit 9 EE: EMI enabled – set by software to enable the EMI reduction function – 0: EMI disabled – 1: EMI enabled Bit 8:7 AM: asynchronous mode – set by software to choose the average charging current limit for passive recirculation condition – 00: 375 mA – 01: 750 mA – 10: 1125 mA – 11: 1500 mA Bit 6 IS: IOUT selection – set by software to choose which current has to be monitored through the IOUT pin – 0: adapter current – 1: battery current Bit 5 SOVR: selector override – set by software to enable the external control of the RBFET/BATFET selectors. Once set, RBFET/BATFET can be controlled by bits 3 and 4 – 0: override enabled – 1: override disabled Bit 4 BED: BATFET external driver – set by software to control the external selector BATFET. OVR bit has to be set, in order to control BATFET – 0: open BATFET – 1: close BATFET Bit 3 ARED: ACFET/RBFET external driver – set by software to control the external selectors ACFET/RBFET. OVR bit has to be set, in order to control ACFET/RBFET – 0: open ACFET/RBFET selectors – 1: close ACFET/RBFET selectors Bit 2 CF: clear fault – set by software to clear the STATUS register. The bit is cleared once the process has been executed – 0: STATUS register unchanged – 1: clear STATUS register • Bit 1 reserved, read as 0 • Bit 0 CI: charge inhibited – set by software to inhibit the charging process – 0: charge enabled – 1: charge inhibited DocID024974 Rev 3 23/30 The PM6613N registers 5.2 PM6613N STATUS register Address: 0x13 Reset value: 0x0000 Table 17. Status 0x13 15 14 13 12 11 10 9 TS 8 7 6 5 4 HBRO RBSS AOC IOC BOV BOC 3 LB 2 1 AOV AUV 0 HS Reserved r • Bit 15:11 reserved, read as 0 • Bit 10 TS: thermal shutdown – r Bit 9 HBRO: HS BTST RBFET open • Bit 8 RBSS: RBFET selector short • • r r r r set by hardware to indicate a short on RBFET between drain and source – 0: no short detected – 1: short detected r r Bit 7 AOC: adapter overcurrent set by hardware to indicate that the adapter current is 2 A higher than the value Bit 6 OC: ILIM overcurrent – • r – – • r set by hardware to indicate that thermal shutdown condition occurred on the PM6613N. Thermal shutdown occurs when the junction temperature (Tj) is higher than 165 °C. It's cleared by hardware when Tj drops below 145 °C. • • 24/30 r set by hardware when input current crosses the input limit set by INPUT_AMP register and ILIM pin – 0: no input overcurrent detected – 1: input overcurrent detected Bit 5 BOV: battery overvoltage – set by hardware when the PM6613N detects a battery voltage (SRN pin) higher than the value reported on Table 13 – 0: no battery overvoltage detected – 1: battery overvoltage detected Bit 4 BOC: battery overcurrent – set by hardware when the PM6613N detects a current flowing through the battery, 2 A higher than the value set on CHRG_AMP register – 0: no battery overcurrent detected – 1: battery overcurrent detected Bit 3 LB: low battery – set by hardware when the PM6613N detects a battery voltage (SRN pin) lower than 2.5 V – 0: no low battery condition detected – 1: low battery condition detected DocID024974 Rev 3 PM6613N The PM6613N registers • Bit 2 AOV: ACDIV overvoltage • set by hardware when the PM6613N detects an ACDIV pin voltage higher than 2.625 V – 0: no ACDIV overvoltage detected – 1: ACDIV overvoltage detected Bit 1 AUV: ACDIV undervoltage • 5.3 – – set by hardware when the PM6613N detects an ACDIV pin voltage lower than 2 V – 0: no ACDIV undervoltage detected – 1: ACDIV undervoltage detected Bit 0 HS: high-side short – set by hardware when a short condition is detected between drain and source of the high-side MOS – 0: no short detected on high-side MOS – 1: short detected on high-side MOS Charge current register (CHRG_AMP) Address: 0x14 Reset value: 0x0000 Table 18. CHRG_AMP 0x14 15 14 13 12 11 10 9 8 7 6 rw rw rw 5 4 3 2 1 0 AMP[13:6] Reserved Reserved rw • rw rw rw rw Bits 13:6 AMP[13:6]: charge current configuration bits – these bits are written by software and fix the amount of current to be delivered when battery is charging. Values are in mA. The range goes from 64 mA when AMP[13:6] = 0x0040 to 16320 mA when AMP[13:6] = 0x3FC0. Minimum step is 64 mA. DocID024974 Rev 3 25/30 The PM6613N registers 5.4 PM6613N Charge voltage register (CHRG_VOLT) Address: 0x15 Reset value: 0x0000 Table 19. CHRG_VOLT 0x15 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 rw rw rw rw rw rw 0 VOLT[14:1] Res Res rw • rw rw rw rw rw rw rw Bits 14:1 VOLT[14:1]: charge voltage configuration bits – these bits are written by software and fix the voltage to apply to the battery when it is charging. Values are in mV and set according to the following formula: Equation 2 V BAT = ( 2 ⋅ 2 VOLT [ 14 ÷ 1 ] )mV Not all the values are allowed. See Table 11 and Table 12 for allowable ranges. 5.5 Input current register (INPUT_AMP) Address: 0x3F Reset value: 0x2000 Table 20. INPUT_AMP 0x3F 15 14 Reserved • 12 11 10 9 8 7 rw rw rw 6 AMP[13:7] rw rw rw rw 5 4 3 2 1 0 Reserved Bits 13:7 AMP[13:7]: charge current configuration bits – 26/30 13 these bits are written by software and fix the current limit delivered by the adapter. The range goes from 128 mA when AMP[13:6] = 0x0080 to 16256 mA when AMP[13:6] = 0x3F80. Minimum step is 128 mA. DocID024974 Rev 3 PM6613N 6 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 21. VFQFPN 3x3x1.0 20 L pitch 0.4 package dimensions Ref. Min. Typ. Max. A 0.8 0.90 1.00 A1 0.02 0.05 A2 0.65 1.00 A3 0.20 b 0.15 0.20 0.25 D 2.85 3.00 3.15 D1 1.60 D2 1.50 1.60 1.70 E 2.85 3.00 3.15 E1 1.60 E2 1.50 1.60 1.70 e 0.35 0.40 0.45 L 0.30 0.40 0.50 ddd 0.07 DocID024974 Rev 3 27/30 Package mechanical data PM6613N Figure 5. VFQFPN 3x3x1.0 20 L pitch 0.4 mechanical data drawings B5(9B$ 28/30 DocID024974 Rev 3 PM6613N 7 Revision history Revision history Table 22. Document revision history Date Revision 23-Jul-2013 1 Initial release. 2 Updated, in Table 5: Electrical characteristics, the following parameters: IOP, ACDIVTH, VBATT_ERR, ICHG_ERR, IADP_G_ERR, IBATT_G_ERR and IBATT_SRC. Datasheet status promoted from preliminary to production data. 3 Changed the value of charge voltage accuracy from 0.5% to 1.53% in the features. Updated light load comparator, battery fault comparators, tR_ACOK and fSW test conditions in Table 5: Electrical characteristics. Updated IBATT_OC and IADP_OC parameters in Table 5: Electrical characteristics. Updated Table 7: Recommended operating conditions. Changed the title of Table 16, Table 17, Table 18, Table 19 and Table 20. 25-Sep-2013 27-Nov-2013 Changes DocID024974 Rev 3 29/30 PM6613N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 30/30 DocID024974 Rev 3
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