SPV1001N40

SPV1001N Cool bypass switch for photovoltaic applications Features ■ SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo PQFN 5 x 6 mm Applications ■ Photovoltaic panels Description The SPV1001N is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. Table 1. Device summary Order codes Package Packaging PQFN 5 x 6 mm Tape and reel SPV1001N30 SPV1001N40 November 2011 Doc ID 018938 Rev 2 1/9 www.st.com 9 Maximum ratings SPV1001N 1 Maximum ratings 1.1 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter 30 40 V Max DC reverse voltage IF Max forward current 12.5 12.5 A Non repetitive peak surge (half-wave, single phase 50-60 Hz) 250 250 A ≥8 k ≥8 k V ESD level Human body level Thermal data Table 3. Symbol TJ 2/9 SPV1001N40 VR IFSM 1.2 Unit SPV1001N30 Thermal data Parameter Value Unit Junction temperature operating range -40 to 150 -40 to 150 °C TSTG Storage temperature range -40 to 150 -40 to 150 °C RthJC Thermal resistance, junction-to-case 4 4 °C/W Doc ID 018938 Rev 2 SPV1001N Electrical characteristics 2 Electrical characteristics Table 4. Electrical characteristics SPV1001 N30 Symbol Parameter SPV1001 N40 Test conditions Unit Min. Typ. Max. Min. Typ. Max. IF = 10A VF,AVG AVG forward voltage drop IF = 5A IR Reverse leakage current D TON/T ratio VR = 30V IF = 5A IF = 5A, TOFF VF Forward voltage drop IF = 5A, TON Note: TJ = 25°C - 120 - - 140 - mV TJ = 25°C - 70 - - 85 - mV TJ = 125°C - 240 - - 280 - mV TJ = 25°C - 1 - - 1 - µA TJ = 125°C - 10 - - 10 - µA TJ = 25°C - 95% - - 95% - - TJ = 125°C - 75% - - 75% - - TJ = 25°C - 850 - - 850 - mV TJ = 125°C - 600 - - 600 - mV TJ = 25°C - 35 - - 40 - mV TJ = 125°C - 135 - - 160 - mV For correct power dissipation and heatsink sizing, please refer to Figure 1, 2 e 4 Doc ID 018938 Rev 2 3/9 Device description 3 SPV1001N Device description A photovoltaic panel consists of a series of PV cells. In optimal conditions, all the cells are equally irradiated and function at the same current level. However, during normal operation some cells may become partially shaded or obscured. These shaded cells limit the current generated by the fully irradiated cells and, in the extreme cases where these cells are totally obscured, the current flow is blocked. In this case the shaded cells behave like a load, and the current generated from the fully irradiated cells produces overvoltages which can reach the breakdown threshold. This phenomenon, known as a “hot spot”, can cause overheating of the shaded cells and, in some cases, even permanent damage resulting in current leakage. To prevent hot spots, therefore, bypass diodes are connected in parallel to the cell strings. The device described here has the same functionality as a Schottky diode, but with improved performance. It features very low forward voltage drop and reverse leakage current. It consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. 4/9 Doc ID 018938 Rev 2 SPV1001N Device description Figure 1. Average forward power dissipation Figure 2. vs average forward current @ 25°C of ambient temperature !ž$ 1 Average forward power dissipation vs average forward current @ 75°C of ambient temperature !ž$ 1 &QPYZ
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