STB14NK60ZT4

STB14NK60ZT4, STP14NK60ZFP N-channel 600 V, 0.45 Ω typ.,13.5 A SuperMESH™ Power MOSFETs in D2PAK and TO-220FP packages Datasheet - production data Features Order codes TAB VDS RDS(on) max. ID 600 V 0.5 Ω 13.5 A STB14NK60ZT4 3 1 PTOT 160 W STP14NK60ZFP 3 40 W 2 2PAK 1 D • Extremely high dv/dt capability TO-220FP • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitances Figure 1. Internal schematic diagram • Very good manufacturing repeatability • Zener-protected D(2, TAB) Applications • Switching applications G(1) Description S(3) AM01476v1 These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB14NK60ZT4 B14NK60Z D2PAK Tape and reel STP14NK60ZFP P14NK60ZFP TO-220FP Tube May 2014 This is information on a product in full production. DocID026306 Rev 1 1/19 www.st.com Contents STB14NK60ZT4, STP14NK60ZFP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D2PAK, STB14NK60ZT4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220FP, STP14NK60ZFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK VDS VDGR VGS ID ID IDM (2) PTOT ESD dv/dt(3) TO-220FP Drain-source voltage 600 V Drain-gate voltage (RGS = 20 kΩ) 600 V Gate-source voltage ± 30 V 13.5 13.5(1) A 8.5 8.5(1) A Drain current (pulsed) 54 (1) A Total dissipation at TC = 25°C 160 40 W Derating factor 1.28 0.32 W/°C Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C 54 Gate-source human body model (R= 1.5 kΩ, C= 100pF) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) TJ Tstg Operating junction temperature Storage temperature 4 kV 4.5 V/ns 2500 -55 to 150 V °C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤13.5A, di/dt ≤200A/μs, VDD≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Thermal data Value Symbol Parameter Unit D²PAK TO-220FP Rthj-case Thermal resistance junction-case max 0.78 3.1 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 62.5 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 12 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAR, Vdd=50 V) 300 mJ DocID026306 Rev 1 3/19 19 Electrical characteristics 2 STB14NK60ZT4, STP14NK60ZFP Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 Min. Typ. Max. 600 Unit V VDS = 600 V 1 μA VDS = 600 V, TC=125°C 50 μA Gate body leakage current (VDS = 0) VGS = ±30 V ±10 μA VGS(th) Gate threshold voltage VDS= VGS, ID = 100 μA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 6 A 0.45 0.5 Ω Min. Typ. Max. Unit - 2220 - pF - 240 - pF - 57 - pF - 122 - pF - 75 - nC - 13.2 - nC - 38.6 - nC IDSS IGSS Zero gate voltage drain current (VGS = 0) 3 Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq(1). Equivalent output capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0 V to 480 V VDD=480 V, ID = 12 A VGS =10 V 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/19 DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP Electrical characteristics Table 7. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD=300 V, ID=6 A, RG=4.7 Ω, VGS=10 V (see Figure 17) Rise time td(off) tf Turn-off delay time Fall time tr(Voff) Off-voltage rise time tf Fall time tc Cross-over time VDD=480 V, ID=12A, RG=4.7Ω, VGS=10V (see Figure 19) Min. Typ. Max. Unit - 26 - ns - 18 - ns - 62 - ns - 13 - ns - 12 - ns - 9.5 - ns - 22 - ns Min Typ. Max Unit Table 8. Source drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Source-drain current - 12 A Source-drain current (pulsed) - 48 A 1.6 V Forward on voltage ISD=12 A, VGS=0 - trr Reverse recovery time - 490 ns Qrr Reverse recovery charge - 4.7 μC IRRM Reverse recovery current ISD=12 A, di/dt = 100 A/μs, VDD=50 V - 19.3 A - 664 ns - 6.8 μC - 20.5 A Min Typ. Max. Unit 30 - - V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD=12 A, di/dt = 100 A/μs, VDD=50 V, Tj=150 °C 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300μs, duty cycle 1.5% Table 9. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. DocID026306 Rev 1 5/19 19 Electrical characteristics 2.1 STB14NK60ZT4, STP14NK60ZFP Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D2PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/19 DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP Electrical characteristics Figure 8. Transconductance Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature DocID026306 Rev 1 7/19 19 Electrical characteristics STB14NK60ZT4, STP14NK60ZFP Figure 14. Source-drain diode forward characteristics Figure 15. Normalized V(BR)DSS vs temperature (BR) Figure 16. Maximum avalanche energy vs temperature 8/19 DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID026306 Rev 1 10% AM01473v1 9/19 19 Package mechanical data 4 STB14NK60ZT4, STP14NK60ZFP Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/19 DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP 4.1 Package mechanical data D2PAK, STB14NK60ZT4 Figure 23. D²PAK (TO-263) drawing 0079457_T DocID026306 Rev 1 11/19 19 Package mechanical data STB14NK60ZT4, STP14NK60ZFP Table 10. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/19 Max. 0.4 0° 8° DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP Package mechanical data Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters DocID026306 Rev 1 13/19 19 Package mechanical data 4.2 STB14NK60ZT4, STP14NK60ZFP TO-220FP, STP14NK60ZFP Figure 25. TO-220FP drawing 7012510_Rev_K_B 14/19 DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP Package mechanical data Table 11. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID026306 Rev 1 15/19 19 Packaging mechanical data 5 STB14NK60ZT4, STP14NK60ZFP Packaging mechanical data Figure 26. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 16/19 DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP Packaging mechanical data Figure 27. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID026306 Rev 1 Min. Max. 330 13.2 26.4 30.4 17/19 19 Revision history 6 STB14NK60ZT4, STP14NK60ZFP Revision history Table 13. Document revision history 18/19 Date Revision 06-May-2014 1 Changes Initial release. Part numbers previously included in datasheet DocID8984 DocID026306 Rev 1 STB14NK60ZT4, STP14NK60ZFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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