STB9NK60ZT4

STB9NK60Z, STP9NK60Z, STP9NK60ZFP N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™ Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet − production data Features Order codes VDS RDS(on) max ID STB9NK60ZT4 STP9NK60Z PTOT 3 600 V 0.95 Ω STP9NK60ZFP ■ Extremely high dv/dt capability ■ Improved ESD capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances 7A 3 1 125 W 1 D2PAK 2 TO-220 30 W 3 1 2 TO-220FP Applications ■ TAB TAB Figure 1. Internal schematic diagram , TAB Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. SC15010 Table 1. Device summary Order codes Marking Package STB9NK60ZT4 B9NK60Z D2PAK STP9NK60Z P9NK60Z TO-220 STP9NK60ZFP P9NK60ZFP TO-220FP January 2013 This is information on a product in full production. Doc ID 8799 Rev 3 Packaging Tube 1/19 www.st.com 19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 8799 Rev 3 STB9NK60Z, STP9NK60Z, STP9NK60ZFP 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK, TO-220 TO-220FP VDS Drain-source voltage 600 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 7 7(1) A ID Drain current (continuous) at TC=100°C 4.4 4.4(1) A IDM(2) Drain current (pulsed) 28 28(1) A PTOT Total dissipation at TC = 25°C 125 30 W 1 0.24 W/°C Derating Factor ESD dv/dt(3) VISO TJ Tstg Gate-source human body model (R=1,5 kΩ, C=100 pF) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s,TC = 25 °C) 4 kV 4.5 V/ns -- Operating junction temperature Storage temperature 2500 -55 to 150 V °C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤7A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX Table 3. Thermal data Value Symbol Parameter Unit D²PAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max (1) TO-220 TO-220FP 1 4.2 62.5 30 °C/W °C/W °C/W 1. When mounted on minimum footprint Doc ID 8799 Rev 3 3/19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Electrical ratings Table 4. Avalanche characteristics Symbol IAR EAS Parameter Avalanche current, repetitive or not-repetitive(1) Single pulse avalanche energy (2) 1. Pulse width limited by Tj Max 2. Starting Tj=25 °C, ID=IAR, VDD=50 V 4/19 Doc ID 8799 Rev 3 Value Unit 7 A 235 mJ STB9NK60Z, STP9NK60Z, STP9NK60ZFP 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Test conditions Drain-source breakdown voltage VGS= 0 ID = 1 mA Min. Typ. Max. 600 Unit V VDS = 600 V, VDS = 600 V, TC = 125 °C 1 50 µA µA Gate body leakage current (VDS = 0) VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA 3.75 4.5 V RDS(on) Static drain-source onresistance VGS= 10 V, ID= 3.5 A 0.85 0.95 Ω IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Qgs Qgd Test conditions Min. Typ. Max. Unit Forward transconductance VDS =15 V, ID = 3.5 A - 5.3 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 1110 135 30 pF pF pF VGS=0, VDS =0 V to 480 V - 72 pF - 38 7 21 Coss eq(2) Equivalent output capacitance Qg 3 Total gate charge Gate-source charge Gate-drain charge VDD=480 V, ID = 7 A VGS =10 V (see Figure 18) 53 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Doc ID 8799 Rev 3 5/19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Switching times Parameter Test conditions Min. Typ. Max. Unit - 19 17 - ns ns - 43 15 - ns ns Min. Typ. Max. Unit 30 - - V VDD=300 V, ID=3.5 A, Turn-on delay time Rise time RG=4.7 Ω, VGS=10 V (see Figure 19) VDD=300 V, ID=3.5 A, Turn-off delay time Fall time RG=4.7 Ω, VGS=10 V (see Figure 19) Gate-source zener diode Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS= ±1 mA, ID=0 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 9. Symbol ISD Source drain diode Parameter Test conditions Typ. Max. Unit Source-drain current - 7 A ISDM(1) Source-drain current (pulsed) - 28 A VSD(2) Forward on voltage ISD=7 A, VGS=0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current di/dt = 100 A/µs, VDD=30 V, Tj=150 °C trr Qrr IRRM ISD=7 A, 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% 6/19 Min. Doc ID 8799 Rev 3 - 480 3.5 14.5 ns µC A STB9NK60Z, STP9NK60Z, STP9NK60ZFP Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK and TO-220 Figure 3. Thermal impedance for D²PAK and TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characterisics Figure 7. Transfer characteristics Doc ID 8799 Rev 3 7/19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Electrical characteristics Figure 8. Transconductance Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature 8/19 Figure 13. Normalized on-resistance vs temperature Doc ID 8799 Rev 3 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Figure 14. Source-drain diode forward characteristics Electrical characteristics Figure 15. Normalized BVDSS vs temperature Figure 16. Maximum avalanche energy vs temperature Doc ID 8799 Rev 3 9/19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Test circuits 3 Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform 10/19 Figure 22. Switching time waveform Doc ID 8799 Rev 3 STB9NK60Z, STP9NK60Z, STP9NK60ZFP 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 8799 Rev 3 11/19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Package mechanical data Table 10. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/19 Max. 0.4 0° 8° Doc ID 8799 Rev 3 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Package mechanical data Figure 23. D²PAK (TO-263) drawing 0079457_T Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 8799 Rev 3 13/19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 8799 Rev 3 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Package mechanical data Figure 25. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 8799 Rev 3 15/19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Package mechanical data Table 12. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16/19 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 8799 Rev 3 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B Doc ID 8799 Rev 3 17/19 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Revision history 5 Revision history Table 13. Document revision history Date 31-Jan-2013 18/19 Revision 3 Changes – Minor text changes – The part number STB9NK60Z-1 has been moved to a separate datasheet – Updated: Section 4: Package mechanical data. Doc ID 8799 Rev 3 STB9NK60Z, STP9NK60Z, STP9NK60ZFP Please Read Carefully: Information in this document is provided solely in connection with ST products. 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