STB155N3LH6

STB155N3LH6 STD155N3LH6 N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET Features Order codes STB155N3LH6 STD155N3LH6 VDSS 30 V RDS(on) max ID(1) 3.0 mΩ 80 A PTOT TAB 110 W TAB 1. Current limited by package 3 3 ■ 100% avalanche tested ■ Logic level drive 1 1 DPAK D²PAK Applications ■ Switching applications ■ Automotive Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. $4!"OR ' 3 !-V Table 1. Device summary Order codes Marking Package D2PAK STB155N3LH6 155N3LH6 STD155N3LH6 September 2011 Packaging Tape and reel DPAK Doc ID 17893 Rev 3 1/18 www.st.com 18 Contents STB155N3LH6, STD155N3LH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 8 Doc ID 17893 Rev 3 STB155N3LH6, STD155N3LH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 20 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 80 A IDM (2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 110 W Tstg Storage temperature Tj °C -55 to 175 Operating junction temperature °C 1. Limited by wire bonding. 2. Pulse width limited by safe operating area. Table 3. Thermal resistance Value Symbol Rthj-case Parameter Thermal resistance junction-case max Rthj-pcb(1) Thermal resistance junction-pcb max Unit D2PAK DPAK 1.36 35 °C/W 50 °C/W 2 1. When mounted on 1 inch OZ Cu board. Table 4. Symbol Thermal resistance Parameter Value Unit IAV Not-repetitive avalanche current 40 A EAS (1) Single pulse avalanche energy 525 mJ 1. Starting Tj = 25°C, ID = 40 A, VDD = 25 V Doc ID 17893 Rev 3 3/18 Electrical characteristics 2 STB155N3LH6, STD155N3LH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 5. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 250 µA Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Symbol Typ. Max. 30 Unit V VDS = 30 V,Tc = 125 °C 1 1 10 µA µA ±100 nA 2.5 V VGS = 10 V, ID = 40 A 2.4 3.0 mΩ VGS = 5 V, ID = 40 A 3.2 4.0 mΩ Min Typ. Max. Unit - 3800 725 420 - pF pF pF - 80 15 15 - nC nC nC - 1.5 - Ω Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VGS = 10 V Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain RG Min. VDS = 30 V IDSS Table 6. 4/18 Static VDS = 25 V, f=1 MHz, VGS = 0 VDD = 15 V, ID = 80 A (see Figure 14) Doc ID 17893 Rev 3 STB155N3LH6, STD155N3LH6 Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD Electrical characteristics Switching on/off (inductive load) Parameter RG = 4.7 Ω, VGS = 10 V Max. Unit - 15 85 - ns ns - 100 40 - ns ns Min. Typ. Max. Unit - 80 320 A A - 1.3 V VDD = 15 V, ID = 40 A, Turn-off delay time Fall time RG = 4.7 Ω, VGS = 10 V (see Figure 15) Source drain diode Parameter VSD(2) Forward on voltage IRRM Typ. (see Figure 15) Source-drain current Source-drain current (pulsed) Qrr Min. VDD = 15 V, ID = 40 A, Turn-on delay time Rise time ISDM(1) trr Test conditions Test conditions ISD = 40 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 17) - 35 26.5 1.7 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17893 Rev 3 5/18 Electrical characteristics STB155N3LH6, STD155N3LH6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM09101v1 ID (A) is in th Tj=175°C Tc=25°C Single pulse is ea ) ar on S( D ax R n m tio y ra d b e e p O imit L 100 100µs 1ms 10 10ms 1 0.1 Figure 4. ID (A) 10 1 VDS(V) Output characteristics AM09102v1 VGS=10V AM09103v1 ID (A) VDS=1V 300 5V 200 250 4V 200 150 150 100 100 3V 50 50 0 0 Figure 6. 0.5 1.0 0 0 VDS(V) 1.5 Normalized BVDSS vs temperature AM09104v1 BVDSS (norm) Figure 7. 1 2 3 4 VGS(V) Static drain-source on resistance AM09105v1 RDS(on) (mΩ) ID=1mA 3.5 1.10 VGS=10V 3.0 1.05 2.5 1.00 2.0 0.95 1.5 0.90 1.0 0.85 0.80 -75 6/18 0.5 -25 25 75 125 TJ(°C) Doc ID 17893 Rev 3 0 0 20 40 60 80 ID(A) STB155N3LH6, STD155N3LH6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM09106v1 VGS (V) Capacitance variations AM09107v1 C (pF) VDD=15V ID=80A 12 Ciss 10 8 1000 Coss 6 Crss 4 2 0 20 0 40 60 100 80 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM09108v1 VGS(th) (norm) 0 5 20 25 VDS(V) Figure 11. Normalized on resistance vs temperature AM09109v1 RDS(on) (norm) VGS=10V ID=40A 2.0 1.2 15 10 1.8 1.0 1.6 0.8 1.4 1.2 0.6 1.0 0.4 0.8 0.2 0.6 0 -75 -25 25 75 TJ(°C) 125 0.4 -75 -25 25 75 125 TJ(°C) Figure 12. Source-drain diode forward characteristics AM09110v1 VSD (V) TJ=-55°C 1.0 0.9 TJ=25°C 0.8 TJ=175°C 0.7 0.6 0.5 0.4 0 10 20 30 40 50 60 70 80 ISD(A) Doc ID 17893 Rev 3 7/18 Test circuits 3 STB155N3LH6, STD155N3LH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/18 0 Doc ID 17893 Rev 3 10% AM01473v1 STB155N3LH6, STD155N3LH6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17893 Rev 3 9/18 Package mechanical data Table 9. STB155N3LH6, STD155N3LH6 D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/18 Max. 0.4 0° 8° Doc ID 17893 Rev 3 STB155N3LH6, STD155N3LH6 Package mechanical data Figure 19. D²PAK (TO-263) drawing 0079457_S Figure 20. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 17893 Rev 3 11/18 Package mechanical data Table 10. STB155N3LH6, STD155N3LH6 DPAK (TO-252) mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 12/18 Max. 0.20 0° 8° Doc ID 17893 Rev 3 STB155N3LH6, STD155N3LH6 Package mechanical data Figure 21. DPAK (TO-252) drawing 0068772_H Figure 22. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 b. All dimension are in millimeters Doc ID 17893 Rev 3 13/18 Packaging mechanical data 5 STB155N3LH6, STD155N3LH6 Packaging mechanical data Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Table 12. Min. 330 13.2 26.4 30.4 DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 14/18 Max. Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 Doc ID 17893 Rev 3 18.4 22.4 STB155N3LH6, STD155N3LH6 Table 12. Packaging mechanical data DPAK (TO-252) tape and reel mechanical data (continued) Tape Reel mm mm Dim. Dim. Min. Max. P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 17893 Rev 3 Min. Max. 15/18 Packaging mechanical data STB155N3LH6, STD155N3LH6 Figure 23. Tape for D²PAK (TO-263) and DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 24. Reel for D²PAK (TO-263) and DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 16/18 Doc ID 17893 Rev 3 STB155N3LH6, STD155N3LH6 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 02-Sep-2010 1 First release. 12-Apr-2011 2 Document status promoted from preliminary data to datasheet. 27-Sep-2011 3 Updated Table 1: Device summary, Figure 2: Safe operating area and Section 4: Package mechanical data. Minor text changes. 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