STB150N3LH6
N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET™ VI DeepGATE™
Power MOSFET in D²PAK package
Datasheet — production data
Features
Order code
VDSS
RDS(on)
max
ID(1)
PTOT
STB150N3LH6
30 V
3.0 mΩ
80 A
110 W
)
s
(
ct
1. Current limited by package.
■
100% avalanche tested
■
Logic level drive
u
d
o
r
P
e D PAK
Applications
■
t
e
l
o
Switching applications
Description
)
(s
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
s
b
O
Figure 1.
2
Internal schematic diagram
t
c
u
$4!"OR
d
o
r
P
e
'
t
e
l
o
bs
3
O
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STB150N3LH6
150N3LH6
D2PAK
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 023351 Rev 1
1/15
www.st.com
15
Contents
STB150N3LH6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
.............................................. 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
2/15
Doc ID 023351 Rev 1
STB150N3LH6
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
± 20
V
Drain current (continuous) at TC = 25 °C
80
A
Drain current (continuous) at TC = 100 °C
80
A
Drain current (pulsed)
320
PTOT
Total dissipation at TC = 25 °C
110
Tstg
Storage temperature
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
ID
(1)
ID
IDM
(2)
Tj
-55 to 175
ro
Operating junction temperature
P
e
1. Limited by wire bonding.
2. Pulse width limited by safe operating area.
Table 3.
du
Thermal resistance
Symbol
s
b
O
)-
Thermal resistance junction-case max
Rthj-pcb(1)
Thermal resistance junction-pcb max
W
°C
°C
t
e
l
o
Parameter
Rthj-case
)
s
(
ct
A
Value
Unit
1.36
°C/W
35
°C/W
s
(
t
c
2
1. When mounted on 1 inch oz Cu board.
u
d
o
r
P
e
Table 4.
Symbol
t
e
l
o
O
bs
Thermal resistance
Parameter
Value
Unit
IAV
Not-repetitive avalanche current
40
A
EAS (1)
Single pulse avalanche energy
525
mJ
1. Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Doc ID 023351 Rev 1
3/15
Electrical characteristics
2
STB150N3LH6
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 5.
Static
Symbol
Parameter
Drain-source breakdown
voltage (VGS= 0)
ID = 250 µA
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 30 V
VDS = 30 V,T c = 125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 40 A
V(BR)DSS
Table 6.
V
nA
2.5
V
2.4
3.0
mΩ
3.2
4.0
mΩ
Min.
Typ.
Max.
Unit
VDS = 25 V, f=1 MHz,
VGS = 0
-
3800
725
420
-
pF
pF
pF
s
b
O
)
s
(
ct
du
1
o
r
P
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 15 V, ID = 80 A
VGS = 10 V
(see Figure 14)
-
80
15
15
-
nC
nC
nC
Gate input resistance
f = 1 MHz gate bias bias =
0 test signal level = 20
mV open drain
-
1.5
-
Ω
Min.
Typ.
Max.
Unit
e
t
e
l
4/15
30
Unit
Ciss
Coss
Crss
RG
O
Max.
±100
Test conditions
)-
Typ.
µA
µA
e
t
e
ol
Parameter
Min.
1
10
VGS = 5 V, ID = 40 A
Dynamic
Symbol
o
s
b
Test conditions
t(s
c
u
d
o
r
P
Table 7.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
-
15
85
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
-
100
40
-
ns
ns
Doc ID 023351 Rev 1
STB150N3LH6
Electrical characteristics
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Max.
Unit
-
80
320
A
A
1.3
V
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 40 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 24 V
(see Figure 17)
-
trr
Qrr
IRRM
Typ.
35
26.5
1.7
ns
nC
A
)
s
(
ct
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
u
d
o
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
Doc ID 023351 Rev 1
5/15
Electrical characteristics
STB150N3LH6
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM09101v1
ID
(A)
is
in
th
Tj=175°C
Tc=25°C
Single pulse
is
ea
)
ar
on
S(
D
ax
R
n m
tio y
ra d b
e
e
p
O imit
L
100
100µs
1ms
10
1
0.1
Figure 4.
10
1
Figure 5.
AM09102v1
VGS=10V
300
5V
4V
)
(s
200
t
c
u
100
50
r
P
e
0
0
0.5
t
e
l
o
Figure 6.
od
1.0
r
P
e
Transfer characteristics
t
e
l
o
ID
(A)
AM09103v1
VDS=1V
s
b
O
200
250
150
u
d
o
VDS(V)
Output characteristics
ID
(A)
3V
150
100
50
VDS(V)
1.5
Normalized BVDSS vs temperature
AM09104v1
BVDSS
s
b
O
)
s
(
ct
10ms
(norm)
0
0
Figure 7.
1
2
3
4
VGS(V)
Static drain-source on-resistance
AM09105v1
RDS(on)
(mΩ)
ID=1mA
3.5
1.10
VGS=10V
3.0
1.05
2.5
1.00
2.0
0.95
1.5
0.90
1.0
0.85
0.80
-75
6/15
0.5
-25
25
75
125
TJ(°C)
Doc ID 023351 Rev 1
0
0
20
40
60
80
ID(A)
STB150N3LH6
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM09106v1
VGS
(V)
Capacitance variations
AM09107v1
C
(pF)
VDD=15V
ID=80A
12
Ciss
10
8
1000
Coss
6
Crss
4
)
s
(
ct
2
0
20
0
40
100
80
60
Qg(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
5
15
10
20
u
d
o
25
VDS(V)
Figure 11. Normalized on-resistance vs
temperature
AM09108v1
VGS(th)
0
r
P
e
RDS(on)
(norm)
(norm)
let
2.0
1.2
o
s
b
1.8
1.0
AM09109v1
VGS=10V
ID=40A
1.6
0.8
)
s
(
ct
0.6
0.4
u
d
o
0.2
0
-75
-25
e
t
e
ol
Pr
25
75
-O
TJ(°C)
125
1.4
1.2
1.0
0.8
0.6
0.4
-75
-25
25
75
125
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
s
b
O
VSD
(V)
AM09110v1
TJ=-55°C
1.0
0.9
TJ=25°C
0.8
TJ=175°C
0.7
0.6
0.5
0.4
0
10
20 30 40 50
60 70 80
ISD(A)
Doc ID 023351 Rev 1
7/15
Test circuits
3
STB150N3LH6
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
)
s
(
t
VG
2.7kΩ
c
u
d
PW
47kΩ
1kΩ
PW
D.U.T.
AM01468v1
e
t
e
ol
o
r
P
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
A
D
G
S
s
(
t
c
3.3
µF
B
25 Ω
D
1000
µF
RG
S
r
P
e
2200
µF
3.3
µF
VDD
ID
Vi
D.U.T.
Pw
let
AM01470v1
Figure 17. Unclamped inductive waveform
b
O
L
VD
VDD
u
d
o
G
so
)-
L=100µH
s
b
O
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/15
0
Doc ID 023351 Rev 1
10%
AM01473v1
STB150N3LH6
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
Doc ID 023351 Rev 1
9/15
Package mechanical data
Table 9.
STB150N3LH6
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
)
s
(
ct
u
d
o
e
2.54
e1
4.88
H
15
J1
2.49
L
2.29
L1
1.27
1.30
du
R
ro
V2
P
e
r
P
e
t
e
l
o
)-
s
b
O
s
(
t
c
L2
0°
10.40
5.28
15.85
2.69
2.79
1.40
1.75
0.4
8°
t
e
l
o
s
b
O
10/15
Max.
Doc ID 023351 Rev 1
STB150N3LH6
Package mechanical data
Figure 19. D²PAK (TO-263) drawing
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
t
c
u
s
b
O
0079457_T
Figure 20. D²PAK footprint(a)
od
r
P
e
16.90
s
b
O
t
e
l
o
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimensions are in millimeters
Doc ID 023351 Rev 1
11/15
Packaging mechanical data
5
STB150N3LH6
Packaging mechanical data
Table 10.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
P2
1.9
2.1
R
50
T
0.25
W
23.7
)
(s
0.35
t
c
u
Min.
24.3
d
o
r
P
e
t
e
l
o
s
b
O
12/15
330
Doc ID 023351 Rev 1
)
s
(
ct
13.2
u
d
o
r
P
e
100
t
e
l
o
s
b
O
Max.
26.4
30.4
Base qty
1000
Bulk qty
1000
STB150N3LH6
Packaging mechanical data
Figure 21. Tape for D²PAK (TO-263)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
T
P2
D
E
F
W
K0
B0
A0
D1
P1
)
s
(
ct
User direction of feed
u
d
o
r
P
e
let
o
s
b
O
)
s
(
t
c
R
Bending radius
User direction of feed
u
d
o
AM08852v2
Figure 22. Reel for D²PAK (TO-263)
T
r
P
e
REEL DIMENSIONS
40mm min.
t
e
l
o
Access hole
At sl ot location
s
b
O
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 023351 Rev 1
13/15
Revision history
6
STB150N3LH6
Revision history
Table 11.
Document revision history
Date
Revision
11-Jul-2012
1
Changes
Initial release.
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
14/15
Doc ID 023351 Rev 1
STB150N3LH6
)
s
(
ct
Please Read Carefully:
u
d
o
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
r
P
e
All ST products are sold pursuant to ST’s terms and conditions of sale.
t
e
l
o
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
)
(s
s
b
O
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
t
c
u
d
o
r
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
P
e
t
e
l
o
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
s
b
O
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 023351 Rev 1
15/15