STB19NM65N

STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) max ID STB19NM65N 710 V < 0.27 Ω 15.5 A STF19NM65N 710 V < 0.27 Ω 15.5 A(1) STI19NM65N 710 V < 0.27 Ω 15.5 A 710 V < 0.27 Ω 15.5 A STW19NM65N 710 V < 0.27 Ω 15.5 A I²PAK TO-220 u d o 3 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 ) (s Switching applications r P e t e l o 1 D²PAK Application 2 TO-220FP 1. Limited only by maximum temperature allowed Description 2 1 STP19NM65N ■ ) s ( ct 3 12 3 1 s b O Figure 1. 2 3 1 TO-247 Internal schematic diagram t c u d o r This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STI19NM65N 19NM65N I²PAK Tube STF19NM65N 19NM65N TO-220FP Tube STP19NM65N 19NM65N TO-220 Tube STB19NM65NT4 19NM65N D²PAK Tape and reel STW19NM65N 19NM65N TO-247 Tube February 2008 Rev 1 1/19 www.st.com 19 Contents STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/19 s b O STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/I²PAK TO-220FP D²PAK/TO-247 Unit VDS Drain-source voltage (VGS=0) 650 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 15.5 15.5(1) A ID Drain current (continuous) at TC = 100 °C 10 10(1) A IDM (2) Drain current (pulsed) 62 ct (s) 62(1) A PTOT Total dissipation at TC = 25 °C 35 W dv/dt (3) 150 e t e ol Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj Pr 15 -- s b O Max. operating junction temperature ) (s u d o V/ns 2500 V -55 to 150 °C 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area t c u 3. ISD ≤15.5 A, di/dt ≤400 A/µs, VDD = 80% V(BR)DSS d o r Table 3. P e Symbol s b O t e l o Thermal data Value Parameter Rthj-case Thermal resistance junctioncase Max Rthj-amb Thermal resistance junctionamb Max Rthj-pcb Thermal resistance junctionpcb max Tl Unit TO-220 I²PAK D²PAK TO-247 TO-220FP Maximum lead temperature for soldering purpose 0.83 62.5 -- -- 3.6 °C/W -- 50 62.5 °C/W 30 -- -- °C/W 300 °C 3/19 Electrical ratings Table 4. STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Avalanche characteristics Symbol Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj=25 °C, ID= IAS, VDD= 50 V) Max value Unit 4 A 400 mJ ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 4/19 s b O STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD= 520 V, ID=15.5 A, VGS=10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 7.75 A Table 6. Symbol b O Parameter s ( t c Max. Unit 30 2 Min. V/ns ) s ( ct 1 100 µA µA ±100 nA 3 4 V 0.25 0.27 Ω Typ. Max. Unit u d o r P e Test conditions V gfs (1) Forward transconductance VDS=15 V, ID =7.75 A 15 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 1900 110 10 pF pF pF Equivalent output capacitance VGS = 0 , VDS = 0 to 520 V 230 pF Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 15.5 A, VGS = 10 V, (see Figure 19) 55 9 30 nC nC nC ete l o s O ) Dynamic Typ. 650 let o s b 1. Characteristics value at turn off on inductive load Min. o r P Coss eq.(2) Qg Qgs Qgd du 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/19 Electrical characteristics Table 7. STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 8. ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Min Typ Unit ns ns ns ns Forward on voltage ISD = 15.5 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25 °C (see Figure 20) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see Figure 20) s b O t c u d o r P e Unit 15.5 62 A A 1.3 V t c u d o r P e t e l o Max (s) Source-drain current Source-drain current (pulsed) ) (s 6/19 Max 25 8 80 26 Test conditions 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% s b O Typ VDD =325 V, ID = 7.75 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Parameter 1. Pulse width limited by safe operating area t e l o Min Source drain diode Symbol ISD Test conditions 460 6 27 ns µC A 600 8 27 ns µC A STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 D2PAK - I2PAK Figure 3. Electrical characteristics Thermal impedance for TO-220 D2PAK - I2PAK ) s ( ct u d o Figure 4. Safe operating area for TO-220FP ) (s Figure 5. r P e Thermal impedance for TO-220FP t e l o s b O t c u d o r t e l o P e Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 s b O 7/19 Electrical characteristics Figure 8. STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Output characteristics Figure 9. Transfer characteristics ) s ( ct u d o Figure 10. Transconductance Figure 11. Static drain-source on resistance r P e t e l o ) (s s b O t c u d o r P e Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations t e l o s b O 8/19 STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Electrical characteristics Figure 15. Normalized on resistance vs temperature ) s ( ct u d o Figure 17. Normalized BVDSS vs temperature r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 9/19 Test circuit 3 STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit ) s ( ct u d o r P e Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit t e l o ) (s s b O t c u d o r P e t e l o Figure 22. Unclamped inductive waveform s b O 10/19 Figure 23. Switching time waveform STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 11/19 Package mechanical data STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 16.40 28.90 3.75 2.65 d o r t e l o s b O 12/19 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ ) (s Max 0.181 0.034 0.066 0.027 0.62 1.27 ) s ( ct 0.050 10 2.40 4.95 1.23 6.20 2.40 13 3.50 t c u P e Typ r P e t e l o s b O 3.85 2.95 u d o 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.147 0.104 0.151 0.116 STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Package mechanical data TO-220FP mechanical data mm. DIM. MIN. A 4.4 MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 G 4.95 5.2 0.195 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 ) s ( ct 0.067 0.204 L3 28.6 30.6 1.126 L4 9.8 10.6 .0385 L5 2.9 3.6 L6 15.9 16.4 9 Ø 3 so b O B 0.630 1.204 0.417 0.141 0.626 0.645 0.354 0.366 0.118 0.126 D A 0.114 9.3 t c u P e e t e l 3.2 ) (s Pr 0.409 E L7 0.106 u d o 16 d o r L3 L6 F2 H G G1 F1 F L7 t e l o s b O inch TYP L2 L5 1 23 L4 13/19 Package mechanical data STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° ) (s d o r P e t e l o s b O 0079457_M Typ 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° s b O Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 ) s ( ct du o r P 5.28 15.85 2.69 2.79 1.40 1.75 e t e ol t c u 14/19 Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Package mechanical data TO-262 mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 ) (s Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 ) s ( ct u d o r P e t e l o Max s b O t c u d o r P e t e l o s b O 15/19 Package mechanical data STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 ) s ( ct 5.45 L 14.20 L1 3.70 18.50 3.55 øR 4.50 S ) (s t c u d o r P e s b O 16/19 r P e t e l o L2 øP u d o 15.75 e t e l o Max. 5.15 s b O 5.50 14.80 4.30 3.65 5.50 STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT ) s ( ct u d o r P e TAPE AND REEL SHIPMENT t e l o bs (s) -O t c u d o r b O so let P e mm DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. REEL MECHANICAL DATA inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 17/19 Revision history 6 STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Revision history Table 9. Document revision history Date Revision 14-Feb-2008 1 Changes First release ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 18/19 s b O STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. 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