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STB6NM60N

STB6NM60N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 600V 4.6A D2PAK

  • 数据手册
  • 价格&库存
STB6NM60N 数据手册
STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS (@Tjmax) RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N 650 V < 0.92 Ω 4.6 A (1) STP6NM60N 650 V < 0.92 Ω 4.6 A (s) 3 3 1 2 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance D²PAK P e 3 ■ Switching applications Description t e l o ) (s Application d o r 1 DPAK s b O Figure 1. 3 2 1 IPAK Internal schematic diagram t c u $ d o r This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the STMicroelectronics’ strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high-efficiency converters. P e ' t e l o bs 3 O Table 1. !-V Device summary Order codes Marking Package Packaging STB6NM60N B6NM60N D²PAK Tape and reel STD6NM60N-1 D6NM60N IPAK Tube STD6NM60N D6NM60N DPAK Tape and reel STF6NM60N F6NM60N TO-220FP Tube STP6NM60N P6NM60N TO-220 Tube January 2009 2 TO-220FP 3 1 ■ t c u TO-220 1. Limited only by maximum temperature allowed 1 Rev 3 1/19 www.st.com 19 Contents STx6NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/19 s b O STx6NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, D²PAK, DPAK, IPAK TO-220FP VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 4.6 ID Drain current (continuous) at TC = 100 °C 2.9 IDM (2) Drain current (pulsed) 18.4 PTOT Total dissipation at TC = 25 °C dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tj Tstg Operating junction temperature Storage temperature ) (s A 20 W ro let so b O 18.4 (1) A c u d P e 45 Peak diode recovery voltage slope 2.9 (1) ) s ( t 4.6 (1) 15 A V/ns 2500 V -55 to 150 °C 1. Limited by maximum temperature allowed t c u 2. Pulse width limited by safe operating area 3. ISD ≤ 4.6A, di/dt ≤ 400A/µs, VDD = 80% V(BR)DSS d o r Table 3. P e let Symbol O o s b Thermal data Value Parameter TO-220 IPAK DPAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-amb Tl Table 4. D²PA K TO220FP 2.78 62.5 5 100 Maximum lead temperature for soldering purpose 62.5 300 Unit °C/W °C/W °C Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50 V) 65 mJ 3/19 Electrical characteristics 2 STx6NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol ID = 1 mA, VGS= 0 Drain-source voltage slope VDD= 400 V, VGS = 10 V, ID = 4.6 A IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 2.3 A dv/dt(1) Max Unit V 40 µA µA ±100 nA 3 4 V 0.85 0.92 Ω 2 Parameter gfs (1) Forward transconductance VDS =15 V, ID = 2.3 A 4 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f=1 MHz, VGS=0 420 30 4 pF pF pF Output equivalent capacitance VGS =0 , VDS =0 to 480 V 70 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 test signal level=20 mV open drain 6 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=480 V, ID = 4.6 A VGS =10 V Figure 19 13 2 7 nC nC nC ete (2) s ( t c du o r P Test conditions ) s ( ct 1 100 u d o r P e Min. V/ns Symbol Coss eq. b O Typ 600 O ) Dynamic Min let o s b Characteristics value at turn off on inductive load Table 6. l o s Test conditions Drain-source breakdown voltage V(BR)DSS 1. Parameter Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/19 STx6NM60N Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time Table 8. ISDM(1) VSD (2) trr Qrr IRRM trr Qrr IRRM Min. Typ. Max. 10 8 40 9 VDD= 300 V, ID = 2.3 A, RG= 4.7 Ω, VGS = 10 V Figure 18 Unit ns ns ns ns Source drain diode Symbol ISD Test conditions Parameter Test conditions Min Typ. Source-drain current Max Forward on voltage ISD= 4.6 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.6 A, di/dt = 100 A/µs, VDD=20 V, Figure 20 Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.6 A, di/dt = 100 A/µs, VDD= 20 V, Tj= 150 °C Figure 20 ) (s 1. Pulse width limited by safe operating area (s) 4.6 ct Source-drain current (pulsed) s b O e t e ol o r P du Unit A 18.4 A 1.3 V 300 2 12 ns µC A 470 3 12 ns µC A 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% t c u d o r P e t e l o s b O 5/19 Electrical characteristics STx6NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK Figure 3. Thermal impedance for TO-220, D²PAK ) s ( ct Figure 4. Safe operating area for TO-220FP ) (s Figure 5. u d o r P e Thermal impedance for TO-220FP t e l o s b O t c u d o r P e t e l o bs Figure 6. O 6/19 Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK STx6NM60N Figure 8. Electrical characteristics Output characteristics Figure 9. Transfer characteristics ) s ( ct u d o r P e Figure 10. Transconductance Figure 11. Static drain-source on resistance t e l o ) (s s b O t c u d o r P e t e l o Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations s b O 7/19 Electrical characteristics STx6NM60N Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature ) s ( ct Figure 16. Source-drain diode forward characteristics u d o r P e Figure 17. Normalized BVDSS vs temperature t e l o ) (s t c u d o r P e t e l o s b O 8/19 s b O STx6NM60N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit ) s ( ct u d o r P e Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit t e l o ) (s s b O t c u d o r P e t e l o Figure 22. Unclamped inductive waveform s b O Figure 23. Switching time waveform 9/19 Package mechanical data 4 STx6NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/19 s b O STx6NM60N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ 1.27 3.75 2.65 ) (s ) s ( ct 0.050 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 Max 0.181 0.034 0.066 0.027 0.62 r P e t e l o s b O 3.85 2.95 u d o 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.147 0.104 0.151 0.116 t c u d o r P e t e l o s b O 11/19 Package mechanical data STx6NM60N TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 G1 2.4 H 10 5.2 e t e ol 16 L3 28.6 L4 9.8 L5 2.9 L6 15.9 ) (s L7 9 t c u Dia A Pr 2.7 10.4 30.6 s b O 10.6 3.6 16.4 9.3 3 od r P e ) s ( ct u d o L2 t e l o Max. 3.2 L7 E B D Dia bs L5 L6 O F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 12/19 STx6NM60N Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 ) s ( ct 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 E 6.40 6.20 e 2.28 e1 4.40 e t e ol H 16.10 L 9.00 (L1) 0.80 L2 V1 ) (s du s b O o r P 6.60 4.60 9.40 1.20 0.80 10 o t c u d o r P e t e l o s b O 0068771_H 13/19 Package mechanical data STx6NM60N TO-252 (DPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 ) s ( ct 5.10 E du 6.40 6.60 E1 4.70 e 2.28 e1 4.40 H 9.35 L 1 e t e ol L1 o r P 4.60 10.10 2.80 bs L2 L4 0.60 O ) R 0o V2 0.80 1 0.20 8o s ( t c u d o r P e t e l o s b O 0068772_G 14/19 STx6NM60N Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 Typ 0.181 0.009 0.037 0.067 0.024 0.053 0.368 u d o 0.1 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° e t e ol bs 0.4 0° O ) Pr 5.28 15.85 2.69 2.79 1.40 1.75 ) s ( ct 0.409 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° s ( t c u d o r P e t e l o s b O 0079457_M 15/19 Packaging mechanical data 5 STx6NM60N Packaging mechanical data DPAK FOOTPRINT ) s ( ct All dimensions are in millimeters u d o r P e TAPE AND REEL SHIPMENT t e l o REEL MECHANICAL DATA bs (s) t c u od r P e TAPE MECHANICAL DATA t e l o DIM. s b O 16/19 mm MIN. MAX. inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 B1 D 1.5 D1 1.5 E 1.65 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 -O DIM. mm MIN. A B inch MAX. MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STx6NM60N Packaging mechanical data D 2 PAK FOOTPRINT ) s ( ct u d o TAPE AND REEL SHIPMENT r P e REEL MECHANICAL DATA let DIM. o s b (s) ct du TAPE MECHANICAL DATA DIM. A0 e t e ol B0 s b O o r P mm MIN. MAX. inch MIN. -O mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. 10.5 10.7 0.413 0.421 15.7 15.9 0.618 0.626 0.059 0.063 D 1.5 1.6 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 1.574 0.933 0.956 17/19 Revision history 6 STx6NM60N Revision history Table 9. Document revision history Date Revision Changes 09-May-2007 1 First release 01-Jun-2007 2 Corrected value on Table 8: Source drain diode 21-Jan-2009 3 Added new package, mechanical data D²PAK ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 18/19 s b O STx6NM60N ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. d o r P e t e l o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. s b O ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 19/19
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