STP21NM60N-F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
650 V
650 V
650 V
650 V
650 V
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
17 A
17 A
17 A(1)
17 A
17 A
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
1
e
t
e
l
o
s
b
Figure 1.
O
)
Switching applications
1
)
s
(
ct
2
D2PAK
TO-220FP
u
d
o
Pr
3
12
I2PAK
Application
Description
3
TO-220
1. Limited by maximum temperature allowed
■
3
3
2
1
2
3
1
TO-247
Internal schematic diagram
s
(
t
c
u
d
o
This series of devices implements the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
r
P
e
t
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l
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s
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O
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB21NM60N
B21NM60N
D2PAK
Tape and reel
STB21NM60N-1
B21NM60N
2PAK
Tube
STF21NM60N
F21NM60N
TO-220FP
Tube
STP21NM60N
P21NM60N
TO-220
Tube
STW21NM60N
W21NM60N
TO-247
Tube
February 2008
I
Rev 7
1/18
www.st.com
18
Contents
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
................................................ 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
)
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2/18
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STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/D2PAK
I2PAK / TO-247
VDS
Drain-source voltage (VGS = 0)
600
VGS
Gate- source voltage
±25
TO-220FP
V
V
)
s
(
ct
(1)
A
A
ID
Drain current (continuous) at TC = 25 °C
17
17
ID
Drain current (continuous) at TC = 100 °C
10
10(1)
IDM
(2)
PTOT
(3)
dv/dt
Drain current (pulsed)
68
Total dissipation at TC = 25 °C
140
o
r
P
Peak diode recovery voltage slope
15
e
t
e
ol
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; TC = 25 °C)
Tstg
Storage temperature
--
bs
O
)
Max. operating junction temperature
Tj
du
68(1)
A
30
W
V/ns
2500
V
–55 to 150
°C
150
°C
1. Limited only by maximum temperature allowed
s
(
t
c
2. Pulse width limited by safe operating area
3.
ISD ≤ 17 A, di/dt ≤ 480 A/µs, VDD = 80% V(BR)DSS
Table 3.
Pr
Symbol
Parameter
TO-220 D²PAK I²PAK
Rthj-case
Thermal resistance junctioncase max
0.89
Rthj-pcb
Thermal resistance junctionpcb max
--
30
Rthj-amb
Thermal resistance junctionambient max
62.5
--
Tl
Maximum lead temperature
for soldering purpose
ete
b
O
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o
s
u
d
o
Thermal data
Table 4.
TO-220FP TO-247
Unit
4.21
0.89
°C/W
--
--
°C/W
50
°C/W
-62.5
300
°C
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
8.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
610
mJ
3/18
Electrical characteristics
2
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Value
Symbol
Parameter
Test conditions
Unit
Min.
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Drain source voltage slope
VDD= 480 V, ID= 17 A,
VGS= 10 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 8.5 A
V(BR)DSS
dv/dt(1)
b
O
1. Characteristic value at turn off on inductive load
Table 6.
ct
Symbol
(1)
Parameter
du
V/ns
uc
1
100
µA
µA
100
nA
3
4
V
0.170
0.220
Ω
Typ.
Max.
d
o
r
2
Min.
Unit
12
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
1900
110
15
Coss eq.(2)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
282
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 8.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 23),
(see Figure 18)
22
15
84
31
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 17 A,
VGS = 10 V,
(see Figure 19)
66
10
33
nC
nC
nC
Gate input resistance
f=1 MHz Gate DC Bias = 0
test signal level = 20 mV
open drain
2
Ω
Ciss
Coss
Crss
Forward transconductance
)
s
(
t
48
P
e
Test conditions
V
VDS = 15 V, ID = 8.5 A
gfs
ro
P
e
t
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l
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s
b
O
)
(s
Dynamic
Max.
600
let
so
Typ.
Rg
S
pF
pF
pF
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Table 7.
Electrical characteristics
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
17
68
A
A
1.5
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 17 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, VDD = 100 V
di/dt=100 A/µs
(see Figure 20)
372
4.6
25
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,VDD = 100 V
di/dt=100 A/µs,
Tj = 150 °C
(see Figure 20)
486
6.3
26
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
)
s
(
ct
u
d
o
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
r
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5/18
Electrical characteristics
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3.
Thermal impedance for TO-220 /
D²PAK / I²PAK
)
s
(
ct
Figure 4.
Safe operating area for TO-220FP
Figure 5.
u
d
o
r
P
e
Thermal impedance for TO-220FP
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)
(s
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6/18
P
e
let
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Figure 8.
Output characteristics
Figure 9.
Electrical characteristics
Transfer characteristics
)
s
(
ct
u
d
o
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
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)
(s
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Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
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7/18
Electrical characteristics
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 16. Source-drain diode forward
characteristics
Figure 15. Normalized on resistance vs
temperature
)
s
(
ct
u
d
o
Figure 17. Normalized BVDss vs temperature
r
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8/18
s
b
O
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
3
Test circuit
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
)
s
(
ct
u
d
o
r
P
e
Figure 20. Test circuit for inductive load
Figure 21. Unclamped Inductive load test
switching and diode recovery times
circuit
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e
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)
(s
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Figure 22. Unclamped inductive waveform
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Figure 23. Switching time waveform
9/18
Package mechanical data
4
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
)
s
(
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u
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10/18
s
b
O
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.49
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
Typ
1.27
3.75
2.65
)
(s
)
s
(
ct
0.050
10
2.40
4.95
1.23
6.20
2.40
13
3.50
16.40
28.90
Max
0.181
0.034
0.066
0.027
0.62
r
P
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t
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l
o
s
b
O
3.85
2.95
u
d
o
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
0.147
0.104
0.151
0.116
t
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s
b
O
11/18
Package mechanical data
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
TO-220FP mechanical data
mm.
Dim.
Min.
A
4.40
inch
Typ
Max.
Min.
4.60
0.173
Typ.
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.017
0.027
F
0.75
1.00
0.030
0.039
F1
1.15
1.50
0.045
0.067
F2
1.15
1.50
0.045
G
4.95
5.20
0.195
G1
2.40
2.70
0.094
H
10
10.40
0.393
L2
0.106
u
d
o
16
0.630
L3
28.6
30.6
1.126
L4
9.80
10.60
0.385
L5
2.9
3.6
0.114
L6
15.90
16.40
L7
9
9.30
Dia
3
e
t
e
l
0.626
o
s
b
3.2
Pr
0.417
0.141
0.645
0.354
0.366
0.118
0.126
D
L3
L6
t
e
l
o
F2
H
G
G1
Dia
F
L7
F1
r
P
e
1.204
B
A
u
d
o
0.409
E
s
(
t
c
)
s
(
ct
0.067
0.204
O
)
s
b
O
Max.
L2
L5
1 2 3
L4
7012510-I
12/18
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Package mechanical data
TO-262 mechanical data
mm
inch
Dim
Min
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
Typ
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
13
3.50
1.27
)
(s
Max
Min
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
)
s
(
ct
u
d
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P
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t
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l
o
Max
s
b
O
t
c
u
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t
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s
b
O
13/18
Package mechanical data
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
0.4
0°
)
(s
t
c
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O
0079457_M
14/18
Max
Typ
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
e
t
e
ol
s
b
O
0.181
0.009
0.037
0.067
0.024
0.053
0.368
)
s
(
ct
u
d
o
Pr
5.28
15.85
2.69
2.79
1.40
1.75
Max
0.409
0.1
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Package mechanical data
TO-247 mechanical data
mm.
Dim.
A
Min.
4.85
Typ
Max .
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
)
s
(
ct
15.75
e
r
P
e
5.45
L
14.20
L1
3.70
let
L2
18.50
øP
3.55
øR
4.50
u
d
o
S
O
)
o
s
b
14.80
4.30
3.65
5.50
5.50
s
(
t
c
u
d
o
r
P
e
t
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l
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s
b
O
15/18
Packing mechanical data
5
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Packing mechanical data
D2PAK FOOTPRINT
)
s
(
ct
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P
e
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
t
e
l
o
DIM.
)-
s
(
t
c
u
d
o
TAPE MECHANICAL DATA
DIM.
MIN.
MAX.
MIN.
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
16/18
inch
A0
e
t
e
ol
s
b
O
Pr
mm
0.933 0.956
s
b
O
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
MAX.
inch
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
6
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
Changes
19-Oct-2005
1
First release.
07-Nov-2005
2
Modified curves Figure 12
29-Nov-2005
3
Complete version
11-Jan-2007
4
The document has been reformatted
19-Jan-2007
5
Typo mistake on Table 6
27-Apr-2007
6
Modified curves Figure 11 and Figure 15
19-Feb-2008
7
Figure 13 has been modified
)
s
(
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17/18
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
)
s
(
ct
Please Read Carefully:
u
d
o
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
r
P
e
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