STB20NK50ZT4

STB20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected in D²PAK package Datasheet — obsolete product Features Type VDSS RDS(on) max STB20NK50Z 500 V < 0.27 Ω PW ID u d o 3 ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability 1 r P e D²PAK t e l o Application ■ ) s ( ct 17 A 190 W ) (s Switching applications Description s b O Figure 1. Internal schematic diagram D(2) t c u This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. d o r G(1) P e t e l o s b O S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STB20NK50Z B20NK50Z D²PAK Tape and reel March 2012 This is information on a discontinued product. Doc ID 9118 Rev 10 1/15 www.st.com 15 Contents STB20NK50Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits ............................................... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/15 Doc ID 9118 Rev 10 STB20NK50Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 17 A ID Drain current (continuous) at TC = 100 °C 10.71 A Drain current (pulsed) 68 A Total dissipation at TC = 25 °C 190 Derating factor 1.51 VESD(G-S) Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) 6000 dv/dt (2) Peak diode recovery voltage slope IDM (1) PTOT Tstg Tj W u d o r P e t e l o Storage temperature Max operating junction temperature 1. Pulse width limited by safe operating area ) s ( ct W/°C 4.5 V/ns -55 to 150 °C 150 °C Value Unit 0.66 °C/W s b O 2. ISD ≤ 17 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Symbol O t c u Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C e t e ol bs ) (s Thermal data od Pr Table 4. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 17 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAR, VDD=50 V) 850 mJ Doc ID 9118 Rev 10 3/15 Electrical characteristics 2 STB20NK50Z Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID =1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 8.5 A Table 6. Parameter s b O Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance VDS = 25 V, f = 1 MHz, Output capacitance V =0 Reverse transfer capacitance GS ) (s t c u od Equivalent output Coss eq. (2) capacitance r P e VDS = 15 V, ID = 8.5 A VDS =0, VDS = 0 to 640 V Min. Typ. Max. Unit 500 V 1 50 µA µA ± 10 µA 3.75 4.5 V 0.23 0.27 Ω Min. Typ. Max. Unit - 13 S - 2600 328 72 pF pF pF - 187 pF ns ns ns ns ) s ( ct u d o 3 Pr td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 250 V, ID = 8.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) - 28 20 70 15 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 17 A, VGS = 10 V (see Figure 16) - 85 15.5 42 let O e t e ol Dynamic Symbol o s b Test conditions 119 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/15 Doc ID 9118 Rev 10 STB20NK50Z Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit - 17 68 A A 1.6 V ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 17 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VR = 100 V (see Figure 17) - 355 3.90 22 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VR = 100 V, Tj = 150 °C (see Figure 17) - 440 5.72 26 trr Qrr IRRM trr Qrr IRRM Table 8. Parameter BVGSO Gate-source breakdown voltage t c u ns µC A P e t e l o Test conditions Min. Igs=± 1mA (open drain) 30 Gate-source Zener diode Symbol (s) d o r 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area ns µC A bs O ) Typ. Max. Unit V s ( t c The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. u d o r P e t e l o s b O Doc ID 9118 Rev 10 5/15 Electrical characteristics STB20NK50Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ) s ( ct Figure 4. Output characteristics Figure 5. u d o Transfer characteristics r P e t e l o ) (s s b O t c u Figure 6. P e d o r Transconductance t e l o Figure 7. s b O 6/15 Doc ID 9118 Rev 10 Static drain-source on resistance STB20NK50Z Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations ) s ( ct u d o Figure 11. Normalized on resistance vs temperature r P e t e l o ) (s s b O t c u d o r P e Figure 12. Maximum avalanche energy vs temperature Figure 13. Normalized BVDSS vs temperature t e l o s b O Doc ID 9118 Rev 10 7/15 Electrical characteristics STB20NK50Z Figure 14. Source-drain diode forward characteristic ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 8/15 Doc ID 9118 Rev 10 STB20NK50Z 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit ) s ( ct u d o r P e Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit t e l o ) (s s b O t c u d o r P e t e l o Figure 19. s b O Unclamped inductive waveform Figure 20. Switching time waveform Doc ID 9118 Rev 10 9/15 Package mechanical data 4 STB20NK50Z Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 c 0.45 c2 1.23 D 8.95 D1 7.50 E 10 E1 8.50 u d o 1.70 e t e ol ) (s s b O Pr 0.60 1.36 9.35 10.40 2.54 t c u 4.88 5.28 15 15.85 2.49 2.69 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 H J1 od Pr L 10/15 ) s ( ct 4.40 e1 s b O Max. A e e t e ol Typ. R V2 0.4 0° 8° Doc ID 9118 Rev 10 STB20NK50Z Package mechanical data Figure 21. D²PAK (TO-263) drawing ) s ( ct u d o r P e t e l o ) (s t c u s b O 0079457_T Figure 22. D²PAK footprint(a) od r P e 16.90 s b O t e l o 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters Doc ID 9118 Rev 10 11/15 Packaging mechanical data 5 STB20NK50Z Packaging mechanical data Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 P2 1.9 2.1 R 50 T 0.25 W 23.7 ) (s 0.35 t c u Min. 24.3 d o r P e t e l o s b O 12/15 Doc ID 9118 Rev 10 330 ) s ( ct 13.2 u d o r P e 100 t e l o s b O Max. 26.4 30.4 Base qty 1000 Bulk qty 1000 STB20NK50Z Packaging mechanical data Figure 23. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F W K0 B0 A0 D1 P1 ) s ( ct User direction of feed u d o r P e let o s b O ) s ( t c Bending radius User direction of feed u d o Figure 24. Reel R AM08852v2 T r P e REEL DIMENSIONS 40mm min. t e l o Access hole At sl ot location s b O B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 9118 Rev 10 13/15 Revision history 6 STB20NK50Z Revision history Table 11. Document revision history Date Revision Changes 21-Jun-2004 7 26-Mar-2009 8 Added new package, mechanical data. 26-Nov-2009 9 Updated symbol for RDS(on) in Table 5: On/off states. 20-Mar-2012 10 The part numbers STF20NK50Z, STP20NK50Z and STW20NK50Z have been moved to a separate datasheet. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 14/15 Doc ID 9118 Rev 10 STB20NK50Z ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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