STB230NH03L
N-channel 30 V, 2.3 mΩ, 80 A D²PAK
STripFET™ Power MOSFET
Features
Order code
VDSS
RDS(on)
ID
STB230NH03L
30V
< 3mΩ
80A(1)
)
s
(
ct
TAB
1. This value is limited by package
■
RDS(on) Qg industry’s benchmark
■
Conduction losses reduced
■
Switching losses reduced
■
Low threshold device
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1
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D²PAK
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Applications
■
Switching applications
– Specifically designed and optimized for
high efficiency DC/DC converters
■
OR-ing
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Figure 1.
Internal schematic diagram
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Description
$ 4!"
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This N-channel enhancement mode Power
MOSFET benefits from the latest refinement of
STMicroelectronics' unique “single feature size“
strip-based process, which decreases the critical
alignment steps to offer exceptional
manufacturing reproducibility. The result is a
transistor with extremely high packing density for
low on-resistance, rugged avalanche
characteristics and low gate charge.
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STB230NH03L
B230NH03L
D²PAK
Tape and reel
September 2011
Doc ID 13469 Rev 2
1/15
www.st.com
15
Contents
STB230NH03L
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
................................................ 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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2/15
Doc ID 13469 Rev 2
STB230NH03L
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Drain-source voltage (VGS = 0)
30
V
VGS
Gate-source voltage
±20
V
(1)
Drain current (continuous) at TC = 25 °C
80
A
ID(1)
Drain current (continuous) at TC=100 °C
178
A
Drain current (pulsed)
320
Total dissipation at TC = 25 °C
300
IDM
(2)
PTOT
Derating factor
TJ
-55 to 175
P
e
2. Pulse width limited by safe operating area.
Table 3.
Thermal data
Symbol
W
du
ro
Operating junction temperature
Parameter
)-
)
s
(
ct
A
2
1. This value is limited by package.
W/°C
°C
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Value
Unit
RthJC
Thermal resistance junction-case max
0.5
°C/W
RthJA
Thermal resistance junction-ambient max
62.5
°C/W
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Value
Unit
60
A
1150
mJ
Table 4.
s
(
t
c
Avalanche data
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Symbol
o
s
b
Unit
VDS
ID
let
Value
IAS
EAS(1)
Parameter
Avalanche current
Single pulse avalanche energy
1. Starting Tj=25 °C, ID=IAV, VDD=24 V.
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Doc ID 13469 Rev 2
3/15
Electrical characteristics
2
STB230NH03L
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Drain-source
V(BR)DSS breakdown voltage
(VGS = 0)
IGSS
Gate body leakage
current (VDS = 0)
Gate threshold voltage VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Ciss
Coss
Crss
Qg
Qgs
Qgd
e
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ol
4/15
RG
)
(s
Input capacitance
Output capacitance
Reverse transfer
capacitance
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Test conditions
VDS =10 V, f=1 MHz,
VGS=0
±100
nA
2.5
V
2.3
3
mΩ
2.75
3.4
mΩ
Min.
Typ.
Max.
Unit
-
4700
1600
85
-
pF
pF
pF
-
72
15
11
-
nC
nC
nC
-
5.5
-
Ω
1
VGS =10 V
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
(see Figure 15)
Doc ID 13469 Rev 2
)
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Pr
VDD=15 V, ID = 60 A
Total gate charge
Gate-source charge
Gate-drain charge
Pr
µA
µA
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ol
VGS= 4.5 V, ID= 40 A
Unit
1
10
VGS= 10 V, ID= 40 A
Dynamic
Max.
V
VGS = ±20 V
VGS(th)
Parameter
Typ.
30
VDS = 30 V,
Zero gate voltage
drain current (VGS = 0) VDS = 30 V,Tc=125 °C
Symbol
s
b
O
ID = 1 mA
IDSS
Table 6.
Min.
1.5
STB230NH03L
Electrical characteristics
Table 7.
Switching times
Symbol
td(on)
tr
td(off)
tf
Table 8.
Parameter
Turn-on delay time
Rise time
VDD=15 V, ID=60 A,
Turn-off delay time
Fall time
(see Figure 14)
ISDM
(2)
VSD(3)
trr
Qrr
IRRM
trr
Qrr
IRRM
Min.
Typ.
Max.
Unit
-
11
322
-
ns
ns
-
123
102
-
ns
ns
Min.
Typ.
Max.
RG=4.7 Ω, VGS=10 V
Source drain diode
Symbol
ISD (1)
Test conditions
Parameter
Test conditions
Source-drain current
Source-drain current
(pulsed)
ISD=40 A, VGS=0
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
)
s
(
ct
ISD=120 A,
di/dt = 100 A/µs,
VDD=20 V
-O
(see Figure 19)
Unit
250
1000
A
A
1.3
V
-
42
34.7
1.6
ns
nC
A
-
47
41.3
1.8
ns
nC
A
ISD=120 A,
di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
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let
o
s
b
(see Figure 19)
-
)
s
(
t
u
d
o
1. This value is silicon limited.
2. Pulse width limited by safe operating area.
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3. Pulsed: pulse duration=300µs, duty cycle 1.5%
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Doc ID 13469 Rev 2
5/15
Electrical characteristics
STB230NH03L
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
)
s
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ct
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Figure 4.
Output characteristics
Figure 5.
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Transfer characteristics
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)
(s
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bs
Figure 6.
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Static drain-source on resistance @ Figure 7.
VGS = 4.5 V
AM09112v1
RDS(on)
(mΩ)
VGS=4.5V
3.5
3.0
2.5
2.0
1.5
10
6/15
20
30
40
50
60
70
80
ID(A)
Doc ID 13469 Rev 2
Static drain-source on resistance @
VGS = 10 V
STB230NH03L
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
)
s
(
ct
Figure 10. Normalized gate threshold voltage
vs temperature
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Figure 11. Normalized on resistance vs
temperature
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)
(s
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Figure 12. Normalized BVDSS vs temperature
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Figure 13. Source-drain diode forward
characteristics
Doc ID 13469 Rev 2
7/15
Test circuit
3
STB230NH03L
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
)
s
(
t
VG
2.7kΩ
c
u
d
PW
47kΩ
1kΩ
PW
D.U.T.
AM01468v1
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o
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P
AM01469v1
Figure 16. Test circuit for inductive load
Figure 17. Unclamped Inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
A
D
G
S
s
(
t
c
3.3
µF
B
25 Ω
D
1000
µF
RG
S
r
P
e
2200
µF
3.3
µF
VDD
ID
Vi
D.U.T.
Pw
let
AM01470v1
Figure 18. Unclamped inductive waveform
b
O
L
VD
VDD
u
d
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G
so
)-
L=100µH
s
b
O
AM01471v1
Figure 19. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/15
0
Doc ID 13469 Rev 2
10%
AM01473v1
STB230NH03L
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Doc ID 13469 Rev 2
9/15
Package mechanical data
Table 9.
STB230NH03L
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
)
s
(
ct
u
d
o
2.54
e1
4.88
H
15
J1
2.49
L
2.29
L1
t(s
1.27
c
u
d
L2
R
o
r
P
V2
bs
5.28
15.85
2.79
1.40
1.30
0°
10.40
2.69
O
)
1.75
0.4
8°
s
b
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10/15
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Max.
Doc ID 13469 Rev 2
STB230NH03L
Package mechanical data
Figure 20. D²PAK (TO-263) drawing
)
s
(
ct
u
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P
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t
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)
(s
t
c
u
s
b
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0079457_S
Figure 21. D²PAK footprint(a)
od
r
P
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16.90
s
b
O
t
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12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
Doc ID 13469 Rev 2
11/15
Packaging mechanical data
5
STB230NH03L
Packaging mechanical data
Table 10.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
P2
1.9
2.1
R
50
T
0.25
W
23.7
)
(s
0.35
t
c
u
Min.
24.3
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12/15
Doc ID 13469 Rev 2
330
)
s
(
ct
13.2
u
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100
t
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s
b
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Max.
26.4
30.4
Base qty
1000
Bulk qty
1000
STB230NH03L
Packaging mechanical data
Figure 22. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
T
P2
D
E
F
W
K0
B0
A0
D1
P1
)
s
(
ct
User direction of feed
u
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P
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let
o
s
b
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)
s
(
t
c
Bending radius
User direction of feed
u
d
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Figure 23. Reel
R
AM08852v2
T
r
P
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REEL DIMENSIONS
40mm min.
t
e
l
o
Access hole
At sl ot location
s
b
O
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 13469 Rev 2
13/15
Revision history
6
STB230NH03L
Revision history
Table 11.
Revision history
Date
Revision
Changes
08-Jun-2007
1
Initial release.
27-Sep-2011
2
– Figure 6: Static drain-source on resistance @ VGS = 4.5 V
has been added.
– Minor text change.
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Doc ID 13469 Rev 2
STB230NH03L
)
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Please Read Carefully:
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Doc ID 13469 Rev 2
15/15
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