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STB85NF55LT4

STB85NF55LT4

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 55V 80A D2PAK

  • 数据手册
  • 价格&库存
STB85NF55LT4 数据手册
STB85NF55L STP85NF55L N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D2PAK STripFET™ II Power MOSFET Features ■ Type VDSS RDS(on) max ID STB85NF55L 55 V < 0.008 Ω 80 A STP85NF55L 55 V < 0.008 Ω 80 A 1 2 1 D²PAK TO-220 Application ■ 3 3 Low threshold drive Switching applications Description This Power MOSFET is the latest development of STMicroelectronis unique "single feature size" strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram $4!"OR ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STB85NF55LT4 B85NF55L D²PAK Tape and reel STP85NF55L P85NF55L TO-220 Tube August 2009 Doc ID 8544 Rev 8 1/14 www.st.com 14 Contents STB85NF55L, STP85NF55L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 Doc ID 8544 Rev 8 STB85NF55L, STP85NF55L 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Value Unit 55 V ± 15 V (1) Drain current (continuous) at TC = 25 °C 80 A ID(1) Drain current (continuous) at TC=100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W Derating factor 2.0 W/°C 10 V/ns Single pulse avalanche energy 980 mJ Operating junction temperature Storage temperature -55 to 175 °C ID IDM (2) PTOT dv/dt (3) Peak diode recovery voltage slope EAS (4) TJ Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 4. Starting TJ = 25 °C, ID = 40 A, VDD = 40 V Table 3. Thermal data Value Symbol Parameter Unit D2PAK TO-220 Rthj-case Thermal resistance junction-case max. 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W Rthj-pcb Thermal resistance junction-pcb Tl max.(1) Maximum lead temperature for soldering purpose 35 °C/W 300 °C 1. When mounted on 1inch² FR-4 2Oz Cu board Doc ID 8544 Rev 8 3/14 Electrical characteristics 2 STB85NF55L, STP85NF55L Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating, VDS = max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±15 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance V(BR)DSS Table 5. Symbol Min. Typ. Max. 55 Unit V 1 10 µA µA ±100 nA 1.6 2.5 V VGS= 10 V, ID= 40 A 0.0060 0.008 VGS= 5 V, ID= 40 A 0.008 0.01 1 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15 V, ID = 40 A - 130 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 4050 860 300 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 27.5 V, ID = 80 A VGS = 5 V 80 20 45 110 - nC nC nC Min. Typ. Max. Unit - 35 165 70 55 - ns ns ns ns 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 6. Symbol td(on) tr td(off) tf 4/14 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 27.5 V, ID= 40 A, RG=4.7 Ω, VGS= 5 V Figure 14 on page 8 Doc ID 8544 Rev 8 STB85NF55L, STP85NF55L Table 7. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current - 80 A (1) Source-drain current (pulsed) - 320 A (2) Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V, TJ = 150 °C Figure 16 on page 8 - ISDM VSD Electrical characteristics trr Qrr IRRM 80 240 6 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 8544 Rev 8 5/14 Electrical characteristics STB85NF55L, STP85NF55L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/14 Doc ID 8544 Rev 8 STB85NF55L, STP85NF55L Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature Doc ID 8544 Rev 8 7/14 Test circuits 3 STB85NF55L, STP85NF55L Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform V(BR)DSS VD IDM ID VDD VDD AM01472v1 8/14 Doc ID 8544 Rev 8 AM01471v1 STB85NF55L, STP85NF55L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 8544 Rev 8 9/14 Package mechanical data STB85NF55L, STP85NF55L TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/14 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 Doc ID 8544 Rev 8 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.147 0.104 0.151 0.116 STB85NF55L, STP85NF55L Package mechanical data D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 in c h Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 2.54 4.88 15 2.49 2.29 1.27 1.30 Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M Doc ID 8544 Rev 8 11/14 Packaging mechanical data 5 STB85NF55L, STP85NF55L Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. 12/14 mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 MAX. B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.075 0.082 0.933 0.956 Doc ID 8544 Rev 8 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB85NF55L, STP85NF55L 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 19-May-2009 7 New ECOPACK® statement in Section 4: Package mechanical data Content reworked to improve readability, no technical changes 06-Aug-2009 8 Table 3: Thermal data has been updated Doc ID 8544 Rev 8 13/14 STB85NF55L, STP85NF55L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 8544 Rev 8
STB85NF55LT4 价格&库存

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STB85NF55LT4
  •  国内价格 香港价格
  • 1000+12.737021000+1.53675
  • 2000+11.993252000+1.44701
  • 5000+11.506305000+1.38826

库存:494

STB85NF55LT4
  •  国内价格 香港价格
  • 1+24.635661+2.97234
  • 10+20.6891710+2.49619
  • 100+16.73474100+2.01908
  • 500+14.87535500+1.79474

库存:494