STC6NF30V

STC6NF30V N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STC6NF30V 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A ■ Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly ■ Double dice in common drain configuration Description TSSOP8 ) s t( c u d Internal schematic diagram o r P e t le o s b -O This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance. Applications ■ Switching application ) s ( ct u d o r P e t e l o s b O Order code Part number Marking Package Packaging STC6NF30V C6NF30V TSSOP8 Tape & reel February 2007 Rev 4 1/13 www.st.com 13 Contents STC6NF30V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/13 o s b O - o r P ) s t( STC6NF30V 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 30 V Drain-gate voltage (RGS = 20KΩ) 20 V ± 12 V Gate-source voltage ID Drain current (continuous) at TC = 25°C 6 A ID Drain current (continuous) at TC=100°C 3.8 A Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25°C 1.5 W Tstg Storage temperature –55 to 150 Max. Operating Junction Temperature –55 to 150 IDM (1) TJ °C °C c u d 1. Pulse width limited by safe operating area Table 2. Thermal data Symbol Parameter e t le RthJ-PBC Thermal resistance junction-PBC Max so RthJ-PBC Thermal resistance junction-PBC Max ) s t( o r P Value Unit 100 (1) °C/W (2) °C/W 83.5 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t = 10 sec. b O - 2. When Mounted on minimum recommended footprint ) s ( ct u d o r P e t e l o s b O 3/13 Electrical characteristics 2 STC6NF30V Electrical characteristics (TJ = 25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±12V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 4.5V, ID= 3A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Test conditions e t le Forward transconductance VDS = 10V, ID = 6A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f = 1 MHz, VGS = 0 (s) t c u d o r P e 1 10 µA µA ±100 nA V 0.020 0.025 o r P so b O - VDD =15V, ID = 6A VGS = 2.5V Figure 16 on page 9 Typ. ) s t( 0.025 0.030 Ω Ω Max. Unit c u d Min. Unit V 0.6 VGS =2.5V, ID = 3A Parameter Max. 30 VDS = Max rating @125°C Dynamic Total gate charge Gate-source charge Gate-drain charge Typ. VDS = Max rating, IDSS Table 4. Min. 18 S 800 180 32 pF pF pF 6.8 2.0 3.4 9 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. t e l o Symbol s b O 4/13 td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 15V, ID = 3A, RG = 4.7Ω, VGS = 2.5V Figure 14 on page 9 Min. 20 25 32 13 ns ns ns ns STC6NF30V Electrical characteristics Table 6. Source drain diode Symbol Max Unit Source-drain current 6 A ISDM(1) Source-drain current (pulsed) 24 A VSD(2) Forward on voltage ISD = 6A, VGS = 0 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6A, ISD trr Qrr IRRM Parameter Test conditions Min. Typ. 25 21 1.7 di/dt = 100A/µs, VDD = 15V, TJ = 150°C ns µC A Figure 16 on page 9 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 5/13 Electrical characteristics STC6NF30V 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics c u d e t le Figure 5. Transconductance o r P e t e l o s b O 6/13 du ) s ( ct ) s t( o r P o s b O Figure 6. Static drain-source on resistance STC6NF30V Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature c u d e t le ) s ( ct Figure 11. Source-drain diode forward characteristics u d o ) s t( o r P o s b O - Figure 12. Normalized breakdown voltage temperature r P e t e l o s b O 7/13 Electrical characteristics STC6NF30V Figure 13. Thermal resistance and max power c u d e t le ) s ( ct u d o r P e t e l o s b O 8/13 o s b O - o r P ) s t( STC6NF30V 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit c u d Figure 16. Test circuit for inductive load switching and diode recovery times e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 9/13 Package mechanical data 4 STC6NF30V Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com c u d e t le ) s ( ct u d o r P e t e l o s b O 10/13 o s b O - o r P ) s t( STC6NF30V Package mechanical data c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 11/13 Revision history 5 STC6NF30V Revision history Table 7. Revision history Date Revision Changes 21-Jun-2004 2 Complete document 03-Aug-2006 3 The document has been reformatted, SOA updated 01-Feb-2007 4 Typo mistake on first page c u d e t le ) s ( ct u d o r P e t e l o s b O 12/13 o s b O - o r P ) s t( STC6NF30V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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