STC5NF20V
N-channel 20V - 0.030Ω - 5A - TSSOP8
2.7V-drive STripFET™ II Power MOSFET
Features
Type
VDSS
RDS(on)
ID
< 0.040 Ω (@ 4.5 V)
< 0.045 Ω (@ 2.7 V)
5A
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Description
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STC5NF20V
20V
■
Ultra low threshold gate drive (2.7V)
■
Standard outline for easy automated surface
mount assembly
■
TSSOP8
Switching applications
Figure 1.
Internal schematic diagram
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STC5NF20V
5N20V
TSSOP8
Tape & reel
October 2007
Rev 6
1/12
www.st.com
12
Contents
STC5NF20V
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
3
Electrical characteristics (curves)
Test circuit
............................ 6
................................................ 8
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4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STC5NF20V
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
20
V
Drain-gate voltage (RGS = 20KΩ)
20
V
± 12
V
A
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
5
ID
Drain current (continuous) at TC=100°C
3
Drain current (pulsed)
20
PTOT
Total dissipation at TC = 25°C
1.5
Tstg
Storage temperature
IDM
(1)
TJ
Parameter
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RthJ-PBC Thermal resistance junction-PBC Max
(s)
so
RthJ-PBC Thermal resistance junction-PBC Max
t
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du
–55 to 150
Thermal data
Symbol
ct
ro
1. Pulse width limited by safe operating area
Table 3.
A
–55 to 150
Max. Operating junction temperature
(s)
A
W
°C
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Value
Unit
100 (1)
°C/W
(2)
°C/W
83.5
1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t = 10 sec.
b
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2. When Mounted on minimum recommended footprint
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3/12
Electrical characteristics
2
STC5NF20V
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On/off states
Parameter
Drain-source breakdown
voltage
Test conditions
ID = 250µA, VGS= 0
Min.
Typ.
20
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±12V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 4.5V, ID= 2.5A
Unit
V
VDS = Max rating,
IDSS
Max.
1
10
µA
µA
±100
nA
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Table 5.
Symbol
gfs (1)
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS = Max rating @125°C
0.6
VGS =2.7V, ID = 2.5A
V
0.030
0.037
0.040
0.045
Ω
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
VDS = 15 V, ID = 2.5A
VDS =15V, f = 1 MHz,
VGS = 0
VDD =10V, ID = 4.5A
VGS =4.5V
9.5
S
460
200
50
pF
pF
pF
8.5
1.8
2.4
11.5
nC
nC
nC
Typ.
Max.
Unit
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
Symbol
td(on)
tr
td(off)
tf
td(off)
tf
tc
4/12
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
RG=4.7Ω, VGS=4.5V
Off-voltage rise time
Fall time
Cross-over time
Vclamp =16V, ID = 5A
RG = 4.7Ω, VGS = 4.5V
Figure 16 on page 8
VDD= 10V, ID= 2.5A,
Figure 14 on page 8
Min.
7
33
27
10
ns
ns
ns
ns
26
11
21
ns
ns
ns
STC5NF20V
Electrical characteristics
Table 7.
Symbol
Source drain diode
Max
Unit
Source-drain current
5
A
ISDM(1)
Source-drain current (pulsed)
20
A
VSD(2)
Forward on voltage
1.2
V
ISD
trr
Qrr
IRRM
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
Min.
Typ.
ISD = 5A, VGS = 0
ISD = 5A,
di/dt = 100A/µs,
VDD = 10V, TJ = 150°C
26
13
1
ns
µC
A
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Figure 16 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STC5NF20V
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
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Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
6/12
STC5NF20V
Figure 8.
Electrical characteristics
Gate charge vs. gate-source voltage Figure 9.
Capacitance variations
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Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Thermal resistance and max power
7/12
Test circuit
3
STC5NF20V
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
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Figure 16. Test circuit for inductive load
Figure 17. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 18. Unclamped inductive waveform
8/12
STC5NF20V
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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9/12
Package mechanical data
STC5NF20V
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10/12
STC5NF20V
5
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
Changes
09-Sep-2004
3
Initial electronic version
03-Aug-2006
4
The document has been reformatted, SOA updated
01-Feb-2007
5
Typo mistake on Table 2.
25-Oct-2007
6
Update marking on Table 1
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11/12
STC5NF20V
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