STD6NK50ZT4

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TYPE STP6NK50Z STF6NK50Z STD6NK50Z ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 500 V 500 V 500 V < 1.2 Ω < 1.2 Ω < 1.2 Ω 5.6 A 5.6 A 5.6 A 90 W 25 W 90 W TYPICAL RDS(on) = 0.93 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 TO-220 2 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING ORDER CODES PART NUMBER MARKING PACKAGE PACKAGING STP6NK50Z P6NK50Z TO-220 TUBE STF6NK50Z F6NK50Z TO-220FP TUBE STD6NK50ZT4 D6NK50Z DPAK TAPE & REEL April 2004 1/12 STP6NK50Z - STF6NK50Z - STD6NK50Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP6NK50Z STD6NK50Z VDS VDGR VGS Unit STF6NK50Z Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C 3.5 3.5 (*) A Drain Current (pulsed) 22.4 22.4 (*) A 90 25 W 0.2 W/°C IDM (
) PTOT 5.6 Total Dissipation at TC = 25°C Derating Factor VESD(G-S) dv/dt (1) 5.6 (*) 0.72 Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature A 3000 V 4.5 V/ns - 2500 -55 to 150 V °C (
) Pulse width limited by safe operating area (1) ISD ≤ 5.6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 DPAK TO-220FP 1.38 5 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 5.6 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 180 mJ GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP6NK50Z - STF6NK50Z - STD6NK50Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.8 A V(BR)DSS 500 Unit 3 V 3.75 4.5 V 0.93 1.2 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 8 V, ID = 2.8 A VDS = 25V, f = 1 MHz, VGS = 0 4.3 S 690 100 20 pF pF pF 52 pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 250 V, ID = 2.8 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 12 23.5 31 23 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, ID = 5.6 A, VGS = 10V 24.6 4.9 13.3 nC nC nC SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 5.6 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5.6 A, di/dt = 100 A/µs VDD = 48V, Tj = 25°C (see test circuit, Figure 5) 254 1.2 10 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5.6 A, di/dt = 100 A/µs VDD = 48V, Tj = 150°C (see test circuit, Figure 5) 360 1.9 11 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 5.6 22.4 A A 1.6 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/12 STP6NK50Z - STF6NK50Z - STD6NK50Z Safe Operating Area for TO-220 Thermal Impedance for TO-220 Safe Operating Area for TO-220FP Thermal Impedance for TO-220FP Safe Operating Area for DPAK Thermal Impedance for DPAK 4/12 STP6NK50Z - STF6NK50Z - STD6NK50Z Output Characteristics Transconductance Gate Charge vs Gate-source Voltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations 5/12 STP6NK50Z - STF6NK50Z - STD6NK50Z Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/12 STP6NK50Z - STF6NK50Z - STD6NK50Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/12 STP6NK50Z - STF6NK50Z - STD6NK50Z TO-220 MECHANICAL DATA DIM. 8/12 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 0.052 F 1.23 1.32 0.048 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP6NK50Z - STF6NK50Z - STD6NK50Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/12 STP6NK50Z - STF6NK50Z - STD6NK50Z TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 10/12 STP6NK50Z - STF6NK50Z - STD6NK50Z DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. D 1.5 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 B 1.5 C 12.8 D 20.2 G 16.4 N 50 2.55 2.75 0.100 0.108 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 40 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 0.063 K0 15.7 MAX. 12.992 0.059 P0 R MIN. MAX. D1 W MAX. 330 T TAPE MECHANICAL DATA inch 0.641 * on sales type 11/12 STP6NK50Z - STF6NK50Z - STD6NK50Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 12/12