STF13NM60N-H

STF13NM60N-H N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STF13NM60N-H 650 V < 0.36 Ω 11 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 1 TO-220FP Application ■ 2 Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 3# Table 1. Device summary Order codes Marking Packages Packaging STF13NM60N-H(1) 13NM60N TO-220FP Tube 1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as “halogen-free” . See Section 4: Package mechanical data. January 2010 Doc ID 16963 Rev 1 1/13 www.st.com 13 Contents STF13NM60N-H Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 9 Doc ID 16963 Rev 1 STF13NM60N-H 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 25 V (1) A ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) PTOT dv/dt (3) Drain current (pulsed) 6.93 (1) 44 (1) A A Total dissipation at TC = 25 °C 25 W Peak diode recovery voltage slope 15 V/ns 2500 V –55 to 150 °C 150 °C Value Unit 5 °C/W Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj 11 Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Tl Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 3.5 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 200 mJ Doc ID 16963 Rev 1 3/13 Electrical characteristics 2 STF13NM60N-H Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD=480 V, ID = 9 A, VGS=10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 5.5 A 0.28 0.36 Ω 600 V 45 2 V/ns 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS=15 V, ID = 5.5 A - 7 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 790 60 3.6 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 135 - pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 11 A, VGS = 10 V, (see Figure 17) - 30 15 4 - nC nC nC RG Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - 4.7 - Ω Coss eq. (2) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/13 Doc ID 16963 Rev 1 STF13NM60N-H Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 5.5 A RG = 4.7 Ω VGS = 10 V (see Figure 16) Min. Typ. Max. Unit - 3 8 30 10 - ns ns ns ns Min Typ. Max Unit - 11 44 A A 1.5 V Source drain diode Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 11 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V (see Figure 18) - 230 2 18 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 18) - 290 190 17 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 16963 Rev 1 5/13 Electrical characteristics STF13NM60N-H 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Thermal impedance for DPAK Figure 7. Transfer characteristics AM03259v1 ID (A) D S( on ) O p Li era m ite tion d by in t m his ax a R rea is 10 1 10µs 100µs 1ms Tj=150°C Tc=25°C 0.1 10ms Sinlge pulse 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for DPAK AM03260v1 ID (A) (o n) is 10µs DS Op Lim era ite tion d by in th m is ax ar R ea 10 1 0.1 0.1 Figure 6. ID (A) 100µs Tj=150°C Tc=25°C 1ms Sinlge pulse 10ms 10 1 100 VDS(V) Output characteristics AM03300v1 VGS=10V AM03301v1 ID (A) 25 20 20 15 15 10 10 5 0 0 6/13 5 5 10 15 20 25 30 VDS(V) Doc ID 16963 Rev 1 0 0 2 4 6 8 10 VGS(V) STF13NM60N-H Figure 8. Electrical characteristics Transconductance Figure 9. AM03303v1 GFS (S) TJ=-50°C Static drain-source on resistance AM03302v1 RDS(on) (Ω) ID=5.5A VGS=10V 0.30 8.5 7.5 0.28 6.5 5.5 0.26 TJ=150°C 4.5 0.24 3.5 2.5 TJ=25°C 0.22 1.5 0.5 0 6 4 2 8 10 0.2 0 ID(A) 4 2 6 10 8 ID(A) Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations AM03305v1 VGS (V) VDD=480V 12 VGS 500 ID=11A VDS AM03304v1 C (pF) 1000 10 Ciss 400 8 300 100 6 Coss 200 4 10 100 2 0 0 20 10 30 1 0.1 0 Qg(nC) Figure 12. Normalized gate threshold voltage vs temperature AM03306v1 VGS(th) (norm) 1.10 Crss 1 10 100 VDS(V) Figure 13. Normalized on resistance vs temperature AM03307v1 RDS(on) (norm) 2.1 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 Doc ID 16963 Rev 1 0 25 50 75 100 TJ(°C) 7/13 Electrical characteristics STF13NM60N-H Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature AM03309v1 VSD (V) Tj=-50°C 1.2 AM03308v1 BVDSS (norm) 1.07 1.05 1.0 1.03 0.8 Tj=25°C Tj=150°C 1.01 0.6 0.99 0.4 0.97 0.2 0 0 8/13 0.95 10 20 30 40 50 ISD(A) 0.93 -50 Doc ID 16963 Rev 1 -25 0 25 50 75 100 125 TJ(°C) STF13NM60N-H 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 20. Unclamped inductive waveform AM01471v1 Figure 21. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16963 Rev 1 10% AM01473v1 9/13 Package mechanical data 4 STF13NM60N-H Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/13 Doc ID 16963 Rev 1 STF13NM60N-H Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 22. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 16963 Rev 1 11/13 Revision history 5 STF13NM60N-H Revision history Table 10. 12/13 Document revision history Date Revision 08-Jan-2010 1 Changes First release Doc ID 16963 Rev 1 STF13NM60N-H Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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