STGD19N40LZ

STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features • AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH TAB • ESD gate-emitter protection 3 • Gate-collector high voltage clamping 1 • Logic level gate drive • Low saturation voltage DPAK • High pulsed current capability • Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) Applications • Pencil coil electronic ignition driver Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. RG G (1) RGE E (3) SC30180 Table 1. Device summary Order code Marking Packages Packing STGD19N40LZ GD19N40LZ DPAK Tape and reel October 2016 This is information on a product in full production. DocID024506 Rev 6 1/17 www.st.com Contents STGD19N40LZ Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/17 ............................................... 9 4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . .11 4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 DocID024506 Rev 6 STGD19N40LZ 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (vGE = 0) VCES(clamped) V VECS Emitter collector voltage (VGE = 0) 20 V Collector current (continuous) at TC = 100 °C 25 A Pulsed collector current 40 A VGE(clamped) V IC (1) ICP (2) VGE Gate-emitter voltage PTOT Total dissipation at TC = 25 °C 125 W Single pulse energy TC = 25 °C, L = 3 mH, VCC = 50 V 300 mJ Single pulse energy TC =150 °C, L = 3 mH, VCC = 50 V 180 mJ Avalanche current TC = 25 °C, L = 3 mH, VCC = 50 V 13.1 A Avalanche current TC = 150 °C, L = 3 mH, VCC = 50 V 10.2 A 8 kV 800 V 2 kV – 55 to 175 °C ESCIS (3) ISCIS Human body model, R = 1.5 kΩ, C = 100 pF ESD Machine model, R = 0, C = 100 pF Charged device model TSTG TJ Storage temperature Operating junction temperature 1. Calculated according to the iterative formula Tj ( max ) – TC IC ( T C ) = ------------------------------------------------------------------------------------------------------Rthj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by max. junction temperature allowed 3. For ESCIS test circuit refer to Figure 16. (Inductive load switching), with A and B not connected. Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.2 °C/W Rthj-amb Thermal resistance junction-ambient device in free air 100 °C/W DocID024506 Rev 6 3/17 17 Electrical characteristics 2 STGD19N40LZ Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static electrical characteristics Symbol Parameter Test conditions Collector emitter VCES(clamped) clamped voltage (VGE = 0) Min. IC = 2 mA IC = 2 mA, TJ = - 40 °C to 175 °C Typ. 390 365 Emitter collector break-down voltage (VGE = 0) IC = 75 mA V(BR)ECS IC = 75 mA, TJ = - 40 °C to 175 °C 20 VGE(clamped) Gate emitter clamped voltage IG = ±2 mA TJ = - 40 °C to 175 °C 12 ICES Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) VGE = ±10 V IGES VGE = ±10 V, TJ = - 40 °C to 175 °C 450 RGE Gate emitter resistance 0 < VGE < VGE (clamped) 12 RG Gate resistance VGE(th) Gate threshold voltage 425 28 V V VCE = 15 V, TJ = 175 °C 20 µA VCE = 200 V, TJ = 175 °C 100 µA 625 16 µA 830 µA 22 kΩ 1.6 Collector emitter saturation voltage V V kΩ VGE =VCE, IC = 1 mA, TJ = - 40 °C 1.75 2.3 2.9 V VGE =VCE, IC = 1 mA 1.55 2.0 2.6 V VGE =VCE, IC = 1 mA, TJ = 175 °C 1.05 1.4 2.0 V 1.5 VGE = 4.5 V, IC = 10 A, VGE = 3.8 V, IC = 6 A VGE = 3.8 V, IC = 6 A, DocID024506 Rev 6 V 1.85 TJ = - 40 °C to 175 °C TJ = - 40 °C to 175 °C 4/17 V 16 VGE = 4.5 V, IC = 10 A VCE(sat) Max. Unit 1.35 V V 1.65 V STGD19N40LZ Electrical characteristics Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Min. Typ. Max. - 730 - pF - 85 - pF - 4 - pF - 17 - nC Min. Typ. Max. Unit VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 280 V, IC = 10 A, VGE = 5 V Gate charge Unit Table 6. Switching on/off Symbol Parameter Test conditions td(on) tr Resistive load Turn-on delay time Rise time VCC = 14 V, RL = 1 Ω, VGE = 5 V RG = 1 kΩ - 0.65 3.5 - µs µs td(on) tr Resistive load Turn-on delay time Rise time VCC = 14 V, RL = 1 Ω, VGE = 5 V, RG = 1 kΩ, TJ = 150 °C - 0.65 3.8 - µs µs td(off) tf dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope VCC = 300 V, L = 1 mH IC = 10 A, VGE = 5 V, RG = 1 kΩ - td(off) tf dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope VCC = 300 V, L = 1 mH IC = 10 A, VGE = 5 V, RG = 1 kΩ, TJ = 150 °C - DocID024506 Rev 6 13.5 5.5 105 14.2 8 97 - - µs µs V/µs µs µs V/µs 5/17 17 Electrical characteristics 2.1 STGD19N40LZ Electrical characteristics (curves) Figure 2. Collector-emitter on voltage vs. temperature (IC = 6 A) Vce (sat) (V) AM17126v1 I =6A C Figure 3. Collector-emitter on voltage vs. temperature (IC = 10 A) Vce (sat) (V) AM17127v1 1.7 1.4 V ge ge ge = 3.8 V I = 10 A c = 3.8 V 1.6 1.3 V V = 4.5 V V = 4.5 V V =5V ge 1.5 1.2 V ge =5V ge 1.1 -75 1.4 -25 25 75 125 Tc (°C) Figure 4. Collector-emitter on voltage vs. temperature (VGE = 4.5 V) VCE(sat) (V) AM17128v1 VGE = 4.5 V 1.9 -75 -25 25 Figure 5. Self clamped inductive switch ISCIS (A) AM17129v1 VCC = 24 V VGE = 5 V 40 1.7 30 IC = 10 A 1.5 TC= 25°C 20 1.1 -75 25 75 125 TC (°C) Figure 6. Output characteristics (TJ= 25 °C) AM17130v1 IC (A) 60 VGE = 6 V 50 VGE = 5.5 0 1 2 3 4 L (mH) 5 Figure 7. Output characteristics (TJ= -175 °C) AM17131v1 IC (A) VGE= 6 V 50 VGE= 5.5 40 VGE = 5 V 30 30 VGE= 4.5 VGE = 4.5 20 20 VGE= 4 V VGE = 4 V 10 6/17 0 VGE= 5 V 40 0 TC= 150°C 10 IC= 6 A -25 Tc (°C) 125 50 I C = 15 A 1.3 75 0 2 4 6 VGE= 3.5 10 VGE = 3.5 8 VCE (V) 0 DocID024506 Rev 6 0 2 4 6 8 VCE (V) STGD19N40LZ Electrical characteristics Figure 8. Output characteristics (TJ= -40 °C) AM17132v1 IC (A) 70 Figure 9. Transfer characteristics 70 VGE= 6 V VCE = 6 V TJ = -40°C 60 60 VGE= 5.5 V 50 50 40 VGE= 5 V 40 30 VGE= 4.5 V 30 20 VGE= 4 V 20 10 0 AM17133v1 IC (A) 2 4 6 VCE (V) 8 Figure 10. Collector cut-off current vs. temperature Ices (μA) AM17134v1 VGE = 0 10 TJ = 175°C 10 VGE= 3.5 V 0 TJ = -25°C 0 0 1 2 3 5 VGE (V) Figure 11. Normalized collector emitter voltage vs. temperature (IC = 2 mA) Vces (norm) AM17135v1 Ic = 2 mA Vge = 0 V 1.005 VCE = 350 V 4 1 1 0.995 VCE = 200 V 0.1 0.99 0.01 -75 -25 25 75 125 Tc (°C) Figure 12. Normalized gate threshold voltage vs. temperature VGE(th) (norm) AM17136v1 VCE = VGE IC = 1 mA 1.1 0.985 -75 -25 25 75 Tc (°C) 125 Figure 13. Normalized collector emitter on voltage vs. temperature (IC = 10 A) VCE(sat) (norm) 1.05 AM17137v1 VGE = 4.5 V IC = 10 A 1.04 1.03 1 1.02 1.01 0.9 1 0.8 0.99 0.98 0.7 0.97 0.6 -75 -25 25 75 125 Tc (°C) 0.96 DocID024506 Rev 6 -75 -25 25 75 125 Tc (°C) 7/17 17 Electrical characteristics Figure 14. Thermal impedance STGD19N40LZ Figure 15. Transconductance vs. temperature GFS (S) AM17170v1 13 IC= 6 A VCE = 5 V 12 11 10 9 8 8/17 -75 DocID024506 Rev 6 -25 25 75 125 TC (°C) STGD19N40LZ 3 Test circuits Test circuits Figure 16. Inductive load switching and ESCIS test circuit Figure 17. Resistive load switching L AM01504v1 AM01504v2 Figure 18. Gate charge test circuit Figure 19. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC Td(on) Tr(Ion) Ton AM01505v1 DocID024506 Rev 6 10% Td(off) Tf Toff AM01506v1 9/17 17 Package information 4 STGD19N40LZ Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/17 DocID024506 Rev 6 STGD19N40LZ 4.1 Package information DPAK (TO-252) type A2 package information Figure 20. DPAK (TO-252) type A2 package outline BW\SH$BUHY DocID024506 Rev 6 11/17 17 Package information STGD19N40LZ Table 7. DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 5.10 V2 5.25 6.60 1.00 R 12/17 Max. 0.20 0° 8° DocID024506 Rev 6 STGD19N40LZ Package information Figure 21. DPAK (TO-252) recommended footprint (a) )3BB a. All dimensions are in millimeters DocID024506 Rev 6 13/17 17 Package information 4.2 STGD19N40LZ Packing information Figure 22. Tape outline for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 14/17 DocID024506 Rev 6 STGD19N40LZ Package information Figure 23. Reel outline for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 8. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID024506 Rev 6 18.4 22.4 15/17 17 Revision history 5 STGD19N40LZ Revision history Table 9. Document revision history 16/17 Date Revision Changes 22-Apr-2013 1 Initial release. 20-May-2013 2 Added Figure 15. 17-Apr-2014 3 Modified title and features Modified VCES(clamped), V(BR)ECS and IGES test conditions Modified Figure 5 and 9 Updated Section 4: Package information Minor text changes 04-Jun-2014 4 Updated features in cover page. 30-Jul-2015 5 Text and formatting changes throughout document. Updated Section 4: Package information 05-Oct-2016 6 Updated Figure 9: Transfer characteristics. Minor text changes. DocID024506 Rev 6 STGD19N40LZ IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID024506 Rev 6 17/17 17