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STGD7NB60KT4

STGD7NB60KT4

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT428

  • 描述:

    IGBT 600V 14A 70W Surface Mount D-Pak

  • 数据手册
  • 价格&库存
STGD7NB60KT4 数据手册
STGD7NB60K STGP7NB60K N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH™ IGBT General features VCES VCE(sat)Max @25°C IC @100°C STGD7NB60K 600V < 2.8V 7A STGP7NB60K 600V < 2.8V 7A Type 3 ■ High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Low gate charge ■ High current capability ■ High frequency operation ■ Short circuit rated 3 1 TO-220 2 1 TO-252 Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switching and resonant topologies Order codes Part number Marking Package Packaging STGD7NB60KT4 GD7NB60K DPAK Tape & reel STGP7NB60K GP7NB60K TO-220 Tube January 2007 Rev 3 1/15 www.st.com 15 Contents STGD7NB60K - STGP7NB60K Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 9 STGD7NB60K - STGP7NB60K 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 DPAK VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at TC = 25°C 14 A IC(1) Collector current (continuous) at TC = 100°C 7 A Collector current (pulsed) 56 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25°C TSC Short circuit withstand Tstg Storage temperature ICM(2) Tj 80 70 W 0.64 0.56 µs – 65 to 150 °C Operating junction temperature 150 1. Calculated according to the iterative formula:: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 2. Symbol Thermal resistance Parameter TO-220 DPAK Unit Rthj-case Thermal resistance junction-case Max 1.56 1.4 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 100 °C/W 3/15 Electrical characteristics 2 STGD7NB60K - STGP7NB60K Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC= 7A voltage VGE= 15V, IC= 7A, Tc= 125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES gfs Table 4. Symbol Cies Coes Cres Qg Test conditions IC= 1mA, VGE= 0 Min. Typ. Max. 600 Unit V 2.8 V V 7 V VCE=Max rating,TC= 125°C 50 500 µA µA Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA Forward transconductance VCE = 15V, IC= 7A 2.3 1.9 5 3.7 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Qgc Total gate charge Gate-emitter charge Gate-collector charge tscw Short circuit withstand time Qge 4/15 Static Test conditions Min. 495 77 13 VCE = 25V, f = 1MHz, VGE = 0 VCE = 480V, IC = 7A, 32.7 5.9 18.3 VGE = 15V, (see Figure 17) VCE=0.5V VBR(CES), RG=10Ω VGE=15V, Tj=125°C Typ. Max. 10 Unit pF pF pF 45 nC nC nC µs STGD7NB60K - STGP7NB60K Table 5. Symbol td(on) tr (di/dt)on Eon (1) tc tr(Voff) td(off) tf Eoff (2) Ets tc tr(Voff) td(off) tf Eoff (1) Ets Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on delay time Turn-on switching losses Cross-over time Off voltage rise time Turn-off delay time Current fall time Turn-off switching losses Total switching losses Cross-over time Off voltage rise time Turn-off delay time Current fall time Turn-off switching losses Total switching losses Test conditions VCC = 480V, IC = 7A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 18) VCC = 480V, IC = 7A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 18) VCC = 480V, IC = 7A, RGE = 10Ω, VGE = 15V, TJ=25°C (see Figure 18) VCC = 480V, IC = 7A, RGE=10Ω, VGE =15V, Tj=125°C (see Figure 18) Min. Typ. Max. Unit 15 6 ns ns 980 95 A/µs µJ 105 30 50 100 140 200 ns ns ns ns µJ µJ 227 68 52 150 300 395 ns ns ns ns µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/15 Electrical characteristics STGD7NB60K - STGP7NB60K 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Normalized collector-emitter on voltage Figure 5. Gate charge vs gate-source voltage Figure 6. 6/15 Capacitance variations STGD7NB60K - STGP7NB60K Electrical characteristics Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/15 Electrical characteristics Figure 13. Thermal Impedance for DPAK Figure 15. Turn-off SOA 8/15 STGD7NB60K - STGP7NB60K Figure 14. Thermal Impedance STGD7NB60K - STGP7NB60K 3 Test circuit Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 9/15 Package mechanical data 4 STGD7NB60K - STGP7NB60K Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STGD7NB60K - STGP7NB60K Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/15 Package mechanical data STGD7NB60K - STGP7NB60K DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 12/15 STGD7NB60K - STGP7NB60K 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 13/15 Revision history 6 STGD7NB60K - STGP7NB60K Revision history Table 6. 14/15 Revision history Date Revision Changes 21-Mar-2005 1 First release 23-Jun-2006 2 The document has been reformatted 26-Jan-2007 3 Typing error STGD7NB60K - STGP7NB60K Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15
STGD7NB60KT4 价格&库存

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STGD7NB60KT4
  •  国内价格 香港价格
  • 2500+5.949662500+0.72117
  • 5000+5.666365000+0.68683
  • 12500+5.4048312500+0.65513

库存:1240